Abstract: A water leakage checking apparatus includes: a plurality of attachment portions for attaching an endoscope; a water leakage sensing portion that communicates with the plurality of attachment portions and simultaneously carries out a plurality of items of a water leakage check menu; and an endoscope information reading portion that reads endoscope information from the endoscope. Also, the water leakage checking apparatus includes: a control portion that determines an item of the water leakage check menu based on the read endoscope information, assigns the determined item of the water leakage check menu to one of the plurality of attachment portions, and outputs attachment portion identifying information for identifying the assigned one of the attachment portions; and a notifying portion that notifies the attachment portion identifying information outputted from the control portion.

Abstract: A washing tube of the present invention is a washing tube for supplying a washing and disinfecting fluid to an endoscope conduit of an endoscope placed in an endoscope washing and disinfecting apparatus, includes: a tube body, one end of which is connected to fluid supply sections of the endoscope washing and disinfecting apparatus for sending a fluid, a connector section disposed at the other end of the tube body and loosely and detachably fitted to a base of the endoscope conduit, a sealing member that is provided inside the connector section and comes into close contact with the base to keep the base and the connector section connected in a watertight manner, a valve body that moves forward by a liquid sending pressure of the supplied fluid and a biasing member provided inside the connector section for biasing the valve body backward.

Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Abstract: An endoscope washing and disinfecting apparatus includes: a connecting portion connected to a bending transmitting portion of an endoscope to transmit driving force; a distal end driving portion for transmitting the driving force to the bending transmitting portion through the connecting portion; a fluid supplying unit for supplying gas into an inner space of the endoscope; and a control unit for controlling a pressure detecting portion for detecting pressure in the inner space and the distal end driving portion to provide the bending portion with bending motion, and for determining occurrence or nonoccurrence of water leak in the endoscope by comparing the pressure detected by the pressure detecting portion and a preset threshold.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

Abstract: A control section reads data such as a conduit diameter and a conduit length of an endoscope and a cleaning profile which are separately recorded in a storage section based on type information of the endoscope registered in the storage section. A cleaning degree suited to the endoscope is estimated by calculation based on a pressure value and a flow rate value which are measured, the diameter and the length of the conduit to be cleaned, and the cleaning profile.

Abstract: An endoscope cleaning/disinfecting apparatus for processing an endoscope in a cleaning tank using a diluted chemical obtained by diluting a chemical with hot water in a dilution tank of the present invention introduces the hot water into the cleaning tank immediately before processing, introduces the hot water into the dilution tank after the temperature of the hot water introduced into the cleaning tank falls within a specified temperature range, generates the diluted chemical, introduces the diluted chemical into the cleaning tank and processes the endoscope.

Abstract: An endoscope washing and disinfecting apparatus of the present invention includes an air pump supplying a gas to an endoscope channel included by an endoscope, a faucet supplying a liquid into the endoscope channel, a channel connectable to a mouthpiece of the endoscope channel included by the endoscope and supplying at least one of a gas or a liquid to the endoscope channel, and an injector converting the liquid into a liquid droplet, mixing the liquid droplet into the gas flowing in the channel with the size of the liquid droplet changeable, and thereby supplying gas-liquid two-phase flow in which the liquid droplet is mixed at a set ratio into the gas into the endoscope channel through the channel.

Abstract: A washing tube of the present invention is a washing tube for supplying a washing and disinfecting fluid to an endoscope conduit of an endoscope placed in an endoscope washing and disinfecting apparatus, includes: a tube body, one end of which is connected to fluid supply sections of the endoscope washing and disinfecting apparatus for sending a fluid, a connector section disposed at the other end of the tube body and loosely and detachably fitted to a base of the endoscope conduit, a sealing member that is provided inside the connector section and comes into close contact with the base to keep the base and the connector section connected in a watertight manner, a valve body that moves forward by a liquid sending pressure of the supplied fluid and a biasing member provided inside the connector section for biasing the valve body backward.

Abstract: An endoscope washing and disinfecting apparatus includes: a connecting portion connected to a bending transmitting portion of an endoscope to transmit driving force; a distal end driving portion for transmitting the driving force to the bending transmitting portion through the connecting portion; a fluid supplying unit for supplying gas into an inner space of the endoscope; and a control unit for controlling a pressure detecting portion for detecting pressure in the inner space and the distal end driving portion to provide the bending portion with bending motion, and for determining occurrence or nonoccurrence of water leak in the endoscope by comparing the pressure detected by the pressure detecting portion and a preset threshold.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: A method for using a semiconductor processing apparatus includes supplying an oxidizing gas and a reducing gas into a process container of the processing apparatus accommodating no product target substrate therein; causing the oxidizing gas and the reducing gas to react with each other within a first atmosphere that activates the oxidizing gas and the reducing gas inside the process container, thereby generating radicals; and removing a contaminant from an inner surface of the process container by use of the radicals.

Abstract: A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.

Abstract: An endoscope washing and disinfecting apparatus according to the present invention includes an apparatus body having a washing tub for placing and washing an endoscope, a brush forward and reverse mechanism provided with a fluid supply part for supplying a fluid circulating in the apparatus body into a conduit of the endoscope, and a washing brush cassette freely attachable and detachable to/from the brush forward and reverse mechanism, having a washing brush for brush washing the inside of the conduit by moving forward and reversely by the brush forward and reverse mechanism through the fluid supply part. Thus, an inexpensive endoscope conduit washing brush cassette capable of readily changing a washing brush and an easy-to-use endoscope washing and disinfecting apparatus corresponding to the endoscope conduit washing brush cassette can be provided.

Abstract: A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.

Abstract: A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, and a step of then forming a silicon oxynitride film on the target substrate within the reaction chamber. The pre-process is arranged to supply a pre-process gas containing a nitriding gas or oxynitriding gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure.

Abstract: A film formation method for a semiconductor process is arranged to form an amorphous silicon film on a target substrate by CVD in a process field within a reaction container, while supplying a first process gas containing silicon into the process field, and setting the process field at a first temperature of 550° C. or more and at a first pressure. The method is arranged to subsequently poly-crystallize the amorphous silicon film by a heat process in the process field to form a poly-silicon film, while supplying a second process gas different from the first process gas into the process field, and setting the process field at a second temperature higher than the first temperature and at a second pressure.

Abstract: A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.