Abstract: A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

Abstract: A switch node stores reception connection information for identifying the connection of frame data that are received in association with transmission connection information for identifying the connection to which the frame data are to be transmitted, and upon receiving frame data, searches for the transmission connection information that was placed in association with the reception connection information of the frame data that were received and distributes and transmits the frame data to the connection of the transmission connection information that was found.

Abstract: To determine a failure of a float switch for detecting whether or not the oil level is less than or equal to a predetermined oil level. A predetermined oil level OLth is set between a normal oil level and a minimum oil level in view of the fact that when the oil level in an oil pan is normal, the oil level is decreased from the normal oil level to the minimum oil level during a predetermined time period just after starting an engine. When a float switch is not changed from an OFF position to an ON position during the predetermined time period after starting the engine, it is determined that the float switch suffers a failure or the oil level is excessive.

Abstract: A transmission for an internal combustion engine that allows a fit length between a dog and a dog hole to be made longer and gear splines to be made longer, without having to increase an axial length of the transmission. A transmission selectively performs gearshifting by using a shift fork to slidingly move a shift gear of the transmission axially and by using a dog clutch to engage the shift gear with, or disengage the shift gear from, an adjacent gear. When the shift gear slidingly moves, a gear-side spline portion of the shift gear slidingly moves over a shaft-side spline portion.

Abstract: A repeater for sending and receiving a routing message for changing routing information determines whether a routing message received from a first adjacent repeater which is disposed adjacent to the repeater is to be sent or not. If it is judged that the routing message is not to be sent, then the repeater generates a pseudo-routing message and sends the generated pseudo-routing message, instead of the routing message received from the first adjacent repeater, to a second adjacent repeater which is disposed adjacent to the repeater.

Abstract: In a first hydraulic clutch device 36 provided with a first clutch inner 84, a pressure bearing plate portion 84D disposed on the first clutch inner 84 opposing driving and driven friction plates 85 and 86, a clutch piston 91 that is consecutively disposed to a pressurizing plate portion 91D and moves to the side to pressurize the driving and driven friction plates 85 and 86 in accordance with an increase in a hydraulic pressure in a control hydraulic chamber 96, a piston guide 92 that forms a control hydraulic chamber 96 between itself and the clutch piston 91, and a canceller plate 93 that forms a hydraulic canceller chamber 97 on the side opposite to the control hydraulic pressure chamber 96, a projection portion 133 of the canceller plate 93 and a notch portion 122 disposed in the piston guide 92 and engaged with the projection portion 133 are engaged with each other and assembled, and a clip 135 that is engaged with an engagement groove 123 of the notch portion 122 and regulates axial movement of the can

Abstract: An integrated circuit device includes: a segment driver having a plurality of segment signal output circuits for driving a plurality of segment lines; a common driver having a plurality of common signal output circuits for driving a plurality of common lines; and a power supply circuit that supplies a first power supply at a first voltage level, a second power supply at a second voltage level, a third power supply at a third voltage level and a fourth power supply at a fourth voltage level to the segment driver and the common driver, wherein each of the plurality of segment signal output circuits sets a voltage level of a segment signal to the third voltage level in a first transition period from a period in which the voltage level of the segment signal is set to the first voltage level to a period in which the voltage level of the segment signal is set to the fourth voltage level, and sets the voltage level of the segment signal to the second voltage level in a second transition period from a period in which

Abstract: A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.

Abstract: A semiconductor device includes a source circuit and a control circuit. The source circuit includes a plurality of operational amplifiers, a plurality of transmission gates, one end of each of the transmission gates being connected to a corresponding source line, and a buffer circuit that outputs a switch control signal. When the number of transmission gates that are turned ON/OFF using the buffer circuit is referred to as n, a gate width and a gate length of a MOSFET of each of the transmission gates are respectively referred to as Wb and Lb, a gate width and a gate length of a MOSFET of the buffer circuit are respectively referred to as Wa and La, and K indicates a constant, the relationship n×Wb×Lb?K×(Wa/La) is satisfied.

Abstract: A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.

Abstract: A semiconductor device includes a source circuit and a control circuit. The source circuit includes a plurality of operational amplifiers, a plurality of transmission gates, one end of each of the transmission gates being connected to a corresponding source line, and a buffer circuit that outputs a switch control signal. When the number of transmission gates that are turned ON/OFF using the buffer circuit is referred to as n, a gate width and a gate length of a MOSFET of each of the transmission gates are respectively referred to as Wb and Lb, a gate width and a gate length of a MOSFET of the buffer circuit are respectively referred to as Wa and La, and K indicates a constant, the relationship n×Wb×Lb?K×(Wa/La) is satisfied.

Abstract: A repeater for sending and receiving a routing message for changing routing information determines whether a routing message received from a first adjacent repeater which is disposed adjacent to the repeater is to be sent or not. If it is judged that the routing message is not to be sent, then the repeater generates a pseudo-routing message and sends the generated pseudo-routing message, instead of the routing message received from the first adjacent repeater, to a second adjacent repeater which is disposed adjacent to the repeater.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.

Abstract: A node device including a congestion detection unit which detects an occurrence and release of congestion for each class of a second communication quality classification, output to a ring-type network, when packet data for each class classified by a first communication quality classification received from a port; a class association table which stores association between each class of the second communication quality classification and each class of the first communication quality classification; a class conversion unit which converts a class of the second communication quality classification detected by the congestion detecting unit into an associated class of the first communication quality classification; and a notification unit which notifies a class of the first communication quality classification to the port as a target data for stopping read out or starting read out is provided.

Abstract: To determine a failure of a float switch for detecting whether or not the oil level is less than or equal to a predetermined oil level. A predetermined oil level OLth is set between a normal oil level and a minimum oil level in view of the fact that when the oil level in an oil pan is normal, the oil level is decreased from the normal oil level to the minimum oil level during a predetermined time period just after starting an engine. When a float switch is not changed from an OFF position to an ON position during the predetermined time period after starting the engine, it is determined that the float switch suffers a failure or the oil level is excessive.

Abstract: A power supply circuit which generates driving voltages for an electro-optic device having a plurality of common electrodes and a plurality of segment electrodes with the use of multi-line driving in which four lines of common electrodes are simultaneously selected. The driving voltages are first through seventh driving voltages in which an i-th (2?i?5, and i is an integer) driving voltage is higher than an (i+1)th driving voltage.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Abstract: The fairness of communication traffic guaranteed within an RPR ring is guaranteed also at a ring interconnection. Transmit weight information used for fairness control is extracted from RPR control information in an arrival packet. In addition to this transmit weight information, a source address, a service class, a fairness bit, and a ring transmit direction are also extracted. If the packet has a fairness bit of “0,” the packet is temporarily stored in an output queue by service class. If the packet has a fairness bit of “1,” the packet is weighted by source and ring transmit direction, based on the transmit weight information, and is temporarily stored in an output queue by source and ring transmit direction. Reading of packets from the output queue by service class is performed prior to reading of packets from the output queue by source and ring transmit direction.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.