Abstract: A nitride semiconductor light emitting device is formed by: forming a resist pattern on a first nitride semiconductor layer formed on a substrate, the resist pattern having a region whose inclination angle relative to a substrate surface changes smoothly as viewed in a cross section perpendicular to the substrate surface; etching the substrate by using the resist pattern as a mask to transfer the resist pattern to the first nitride semiconductor layer; and forming an light emitting layer on the patterned first nitride semiconductor layer. The nitride semiconductor light emitting device can emit near-white light or have a wavelength range generally equivalent to or near visible light range.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Abstract: A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.

Abstract: A propulsion unit for a boat has a cooling water intake structure through which entry of cooling water is obstructed when the boat is towed while the impeller is not turned, and through which sufficient cooling water enters when the impeller is turned. The propulsion unit includes an impeller, plural stationary blades provided on the downstream side of the impeller, and a cooling water intake structure. The intake structure is disposed between adjacent first and second stationary blades, on the side of the first stationary blade relative to a bisecting line between the two stationary blades. Hydraulic pressure on the side of the first stationary blade, relative to the bisecting line, is lowered by guide action of the impeller, and hydraulic pressure on the side of the second stationary blade relative to the bisecting line is raised, respectively, when the boat is towed while the impeller is stopped.

Abstract: A confronting surface of a substrate faces a first surface of a semiconductor element. Extension layers are formed on the substrate at positions facing electrodes on the semiconductor element. A levee film is disposed on one of the confronting surface and the first surface. Openings are formed through the levee film. Connection members which is filled but is not completely filled in the openings connect the electrodes and the extension layers.

Abstract: A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: A semiconductor device includes first and second signal lines SL1 and SL2 through which signals with the same phase and the same amplitude are transmitted, and third and fourth signal lines SL3 and SL4 through which signals with different phases or different amplitudes are transmitted. The line-to-line distance when the first and second signal lines SL1 and SL2 are disposed in parallel is shorter than the line-to-line distance when the third and fourth signal lines SL3 and SL4 are disposed in parallel.

Abstract: A small boat has left and right sponsons extending in a longitudinal direction and respectively attached to left and right side walls forming a boat body. The sponsons are provided with an attachment section contacting a left side wall, a gliding section extending substantially horizontally from a lower edge of the attachment section, an inclined section connecting to a side edge of the gliding section, an upper edge of the attachment section, and projecting sections extending from an upper edge to a lower edge of the inclined section. Water flowing along the inclined section is guided by the projection sections and removed or separated from the inclined section. Accordingly, a small boat that turns through a small arc turning locus is provided, e.g., a small boat that is capable of relatively tight turning.

Abstract: A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.

Abstract: A propulsion unit for a boat has a cooling water intake structure through which entry of cooling water is obstructed when the boat is towed while the impeller is not turned, and through which sufficient cooling water enters when the impeller is turned. The propulsion unit includes an impeller, plural stationary blades provided on the downstream side of the impeller, and a cooling water intake structure. The intake structure is disposed between adjacent first and second stationary blades, on the side of the first stationary blade relative to a bisecting line between the two stationary blades. Hydraulic pressure on the side of the first stationary blade, relative to the bisecting line, is lowered by guide action of the impeller, and hydraulic pressure on the side of the second stationary blade relative to the bisecting line is raised, respectively, when the boat is towed while the impeller is stopped.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: Disclosed are a power supply circuit which can cope with a multipotential level design and is suitable for generating potentials for driving a liquid crystal, and a liquid crystal device and an electronic instrument which use the power supply circuit. A first step-up circuit in the power supply circuit generates a first stepped-up potential level obtained by stepping up a power-supply level with a ground level taken as a reference. A regulator circuit generates a center potential obtained by regulating the first stepped-up potential level by referring to a reference potential level with the ground level taken as a reference. A second step-up circuit generates a second stepped-up potential level obtained by stepping up the center potential with the ground level taken as a reference.

Abstract: To provide a jet propulsion boat that enables preventing the occurrence of cavitation. In a jet propulsion boat that jets water pressurized and accelerated by a water jet pump from a rear jet nozzle and is propelled by its reaction, a turbocharger is provided to an engine for driving the water jet pump and in case the rate of the rise of engine speed is a predetermined value or more, delay control is applied to the rise of the boost pressure of the turbocharger.

Abstract: A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-type GaN compound semiconductor layer. An n electrode can be formed on the n-type GaN compound semiconductor layer, and a p electrode can be formed on the p-type GaN compound semiconductor layer. The n electrode preferably includes an Al layer of 1 to 10 nm, in contact with the n-type GaN compound semiconductor layer, and any metal layer of Rh, Ir, Pt, and Pd formed on the Al layer. The p electrode can be made of a 200 nm or less layer of of Pd, Pt, Rh, Pt/Rh, Pt/Ag, Rh/Ag, Pd/Rh, or Pd/Ag, in contact with the p-type GaN compound semiconductor layer. Both electrodes can make ohmic contact with respective n-type/p-type GaN semiconductors without application of active annealing.

Abstract: An operational amplifier having a first step-up circuit in the power supply circuit generates a first stepped-up potential level obtained by stepping up a power-supply level with a ground level taken as a reference. A regulator circuit generates a center potential obtained by regulating the first stepped-up potential level by referring to a reference potential level with the ground level taken as a reference. A second step-up circuit generates a second stepped-up potential level obtained by stepping up the center potential with the ground level taken as a reference. A multipotential generating circuit generates a plurality of potential levels from a difference between the second stepped-up potential level and the center potential with the ground level taken as a reference, and supplies those potential levels to the panel of the liquid crystal device that is driven by an MLS driving scheme.

Abstract: A power supply circuit which generates driving voltages for an electro-optic device having a plurality of common electrodes and a plurality of segment electrodes with the use of multi-line driving in which four lines of common electrodes are simultaneously selected. The driving voltages are first through seventh driving voltages in which an i-th (2?i?5, and i is an integer) driving voltage is higher than an (i+1)th driving voltage.

Abstract: A water jet pump is provided which reduces cavitation and thereby allows an improvement in pump efficiency. In a water jet pump in which an impeller driven for rotation and is provided in a cylindrical housing, an edge portion of the outer circumferential surface of the impeller that opposes the inner surface of the housing is formed with a radius of curvature. This structure reduces a variation in the pressure of a water stream passing between the outer circumferential surface of the impeller and the inner surface of the housing toward the impeller front surface side, thereby reducing the occurrence of cavitation and improving the pump efficiency.

Abstract: To provide a jet propulsion boat that enables preventing the occurrence of cavitation. In a jet propulsion boat that jets water pressurized and accelerated by a water jet pump from a rear jet nozzle and is propelled by its reaction, a turbocharger is provided to an engine for driving the water jet pump and in case the rate of the rise of engine speed is a predetermined value or more, delay control is applied to the rise of the boost pressure of the turbocharger.

Abstract: A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace.