Abstract: A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.

Abstract: It is an object of the present invention to provide a high thermal conductive element that has improved thermal conductivity in the layer direction while retaining the high thermal conductivity characteristics in the planar direction possessed by graphite. The present invention is a high thermal conductive element in which carbon particles are dispersed in a graphite-based matrix, wherein (1) the c axis of the graphene layers constituting the graphite are substantially parallel, (2) the thermal conductivity ?? in a direction perpendicular to the c axis is at least 400 W/m·k and no more than 1000 W/m·k, and (3) the thermal conductivity ?? in a direction parallel to the c axis is at least 10 W/m·k and no more than 100 W/m·k.

Abstract: It is an object of the present invention to provide an oxygen reduction electrode which provides four-electron reduction reaction with high selectivity in the reaction of reducing oxygen. The present invention involves a method of manufacturing an electrode for reducing oxygen used for four-electron reduction of oxygen, having (1) a first step wherein a charcoal-based material is obtained by carbonization of a starting material comprising a nitrogen-containing synthetic polymer, and (2) a second step wherein the electrode for reducing oxygen is manufactured using an electrode material comprising the charcoal-based material.

Abstract: The present invention provides an emissive material with excellent electron emission characteristics. In particular, the present invention relates to a method for manufacturing an emissive material consisting of oriented graphite, having a step of obtaining an oriented graphite comprising a second component and having poses on the inside by heat treating a polymer film in the presence of a second, non-carbon component.

Abstract: The present invention provides an electron emission material that is excellent in electron emission characteristics, a method of manufacturing the same, as well as an electron emission element. The method is a method of manufacturing an electron emission material including a carbon material obtained by baking a polymer film. In the method, a polyamic acid solution is prepared in which at least one metallic compound selected from a metal oxide and a metal carbonate is dispersed; the polyamic acid solution thus prepared is formed into a film and then is imidized to form a polyimide film including the metallic compound; and then the polyimide film thus formed is baked to form the carbon material. The electron emission material is formed so that it includes a carbon material, a protrusion having a concavity in its surface is formed at the surface of the carbon material, and the protrusion includes a metallic element.

Abstract: Provided are an electron emission material having a reduced work function, and an electron emission element that has lower power consumption and/or high current density and exhibits excellent electron emission performance. An electron emission material includes a semiconductor substrate having atomic steps on a surface thereof and a flat region between two of the atomic steps adjacent to each other, and an adsorbed layer arranged in the flat region. The adsorbed layer contains at least one element selected from an alkali metal element, an alkaline-earth metal element, and Sc.

Abstract: A thermoelectric transducer comprising an emitter (1) for emitting electrons according to the action of heat or an electric field, a collector (2) disposed so as to face the emitter (1) and collect electrons emitted from the emitter (1), and an electron transport layer (3) held between the emitter (1) and the collector (2) to serve as a region for transferring the electrons emitted from the emitter (1), the electron transport layer (3) being a porous body having a mixed structure of a vapor phase and a solid phase, the entire solid phase which composes the porous body being composed of an insulating material, and the electrons emitted from the emitter traveling in the vapor phase by applying an electric potential to the collector (2) that is higher than that applied to the emitter (1).

Abstract: A principal object of the present invention is to provide efficiently an electron-emitting element demonstrating performance equal or superior to that attained with the conventional technology.

Abstract: In the present invention an electron-emitting material is provided wherein the field emission initiation voltage or work function is smaller than that of conventional materials. That is, the present invention relates to an electron-emitting sheet material which is a material comprising a substrate 102 and a graphite sheet 101 laminated on the top of the substrate 102, wherein (1) the graphite sheet 101 has a layered structure of layers of graphenes consisting of a plurality of carbon hexagonal networks, (2) the graphenes are layered relative to one another so that the c-axial direction of each graphene is substantially perpendicular to the plane of the substrate 102, (3) the graphite sheet 101 is laminated on top of the substrate 102 so that the c-axial direction of each graphene is substantially perpendicular to the plane of the substrate 102, and (4) the graphite sheet 101 comprises an element other than carbon as a second element.

Abstract: A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple ?-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple ?-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple ?-doped InAlAs layer (204) as a carrier supplying layer is reduced.

Abstract: The present invention discloses a fluorescent-substance light emitting element comprising a cold cathode type emitter section for emitting electrons, a fluorescent-substance layer configured to emit light by collision with electrons emitted from the emitter section, and an anode section disposed to be opposed to the emitter section and having an anode electrode and the fluorescent-substance layer provided inside of the anode electrode, wherein a porous-substance layer, comprising an electrically insulative porous substance which is a solid substance having a solid skeletal part formed into a three-dimensional network shape and a hole extending continuously in the form of a mesh of the solid skeletal part, is sandwiched between the emitter section and the anode section.

Abstract: The first basic structure of the electron emission element of the present invention includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes.

Abstract: The present invention provides a thermal switching element that has a quite different configuration from that of a conventional technique and can control heat transfer by the application of energy, and a method for manufacturing the thermal switching element. The thermal switching element includes a first electrode, a second electrode, and a transition body arranged between the first electrode and the second electrode. The transition body includes a material that causes an electronic phase transition by application of energy. The thermal conductivity between the first electrode and the second electrode is changed by the application of energy to the transition body.

Abstract: The present invention discloses a fluorescent-substance light emitting element comprising a cold cathode type emitter section for emitting electrons, a fluorescent-substance layer configured to emit light by collision with electrons emitted from the emitter section, and an anode section disposed to be opposed to the emitter section and having an anode electrode and the fluorescent-substance layer provided inside of the anode electrode, wherein a porous-substance layer, comprising an electrically insulative porous substance which is a solid substance having a solid skeletal part formed into a three-dimensional network shape and a hole extending continuously in the form of a mesh of the solid skeletal part, is sandwiched between the emitter section and the anode section.

Abstract: A magnetoresistance element, wherein a first electric conductor is so formed as to contact almost the center of the surface opposite to a non-magnetic layer of a first ferromagnetic layer so formed as to sandwich, along with a second ferromagnetic layer, the non-magnetic layer, and an insulator so formed as to cover at least the side surface of the first ferromagnetic layer and the non-magnetic layer is formed so as to cover the peripheral edge of the surface of the first ferromagnetic layer, whereby it is possible to prevent a leakage current from flowing from the first electric conductor to a second electric conductor along the side surfaces of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer, and to make uniform a bias current running from the first electric conductor to the second electric conductor to thereby restrict variations in magnetoresistance characteristics such as MR value and junction resistance.

Abstract: An electron emission element includes a substrate, a cathode electrode formed on the substrate, an anode electrode disposed so as to be opposed to the cathode electrode, an electron emission member disposed on the cathode electrode, a control electrode disposed between the cathode electrode and the anode electrode, and an insulating layer. The electron emission member includes a first member having a hole and a second member filling the hole, wherein the second member is more likely to emit electrons than the first member.

Abstract: An electron emitting device includes at least a first electrode and an electron emitting section provided on the first electrode. The electron emitting section is formed of a particle or an aggregate of particles. The particle contains a carbon material having a carbon six-membered ring structure. The carbon material having a carbon six-membered ring structure contains, for example, graphite or a carbon nanotube as a main component.

Abstract: An electron emitting device includes at least an electron transporting member (1), an electron emitting member (3), and an electric field concentration region (2) formed between the electron transporting member (1) and the electron emitting member (3). For example, the electron transporting member (1) may be a conductive layer, the electric field concentration region (2) may be formed of an insulating layer formed on the conductive layer, and the electron emitting member (3) may be formed of particles provided on the insulating layer. Due to the electric field concentration in the electric field concentration region (2), electrons are easily injected from the electron transporting member (1) to the electron emitting member (3).

Abstract: A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple &dgr;-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple &dgr;-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple &dgr;-doped InAlAs layer (204) as a carrier supplying layer is reduced.

Abstract: An n-GaN layer is provided as an emitter layer for supplying electrons. A non-doped (intrinsic) AlxGa1−xN layer (0≦x≦1) having a compositionally graded Al content ratio x is provided as an electron transfer layer for transferring electrons toward the surface. A non-doped AlN layer having a negative electron affinity (NEA) is provided as a surface layer. Above the AlN layer, a control electrode and a collecting electrode are provided. An insulating layer formed of a material having a larger electron affinity than that of the AlN layer is interposed between the control electrode and the collecting electrode. This provides a junction transistor which allows electrons injected from the AlN layer to conduct through the conduction band of the insulating layer and then reach the collecting electrode.