Abstract: The first basic structure of the electron emission element of the present invention includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes.

Abstract: The first basic structure of the electron emission element of the present invention, includes at least two electrodes disposed in a horizontal direction at a predetermined interval, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed between the electrodes. On the other hand, the second basic structure of the electron emission element of the present invention includes at least two electrodes disposed at a predetermined interval, a conductive layer disposed between the electrodes so as to be electrically connected thereto, and a plurality of electron emission portions made of a particle or an aggregate of the particles dispersively disposed on the surface of the conductive layer between the electrodes.

Abstract: An electron emission element of the present invention includes a substrate, a cathode formed on the substrate, an anode opposed to the cathode, an electron emission member disposed on the cathode, and a control electrode disposed between the cathode and the anode. During operation, the electric field intensity immediately above the electron emission member is lower than that between the control electrode and the anode. Alternatively, the spatial average of an electric field intensity between the electron emission member and the control electrode is smaller than that between the control electrode and the anode.

Abstract: An n-GaN layer is provided as an emitter layer for supplying electrons. A non-doped (intrinsic) AlxGa1−xN layer (0≦x≦1) having a compositionally graded Al content ratio x is provided as an electron transfer layer for transferring electrons toward the surface. A non-doped AlN layer having a negative electron affinity (NEA) is provided as a surface layer. Above the AlN layer, a control electrode and a collecting electrode are provided. An insulating layer formed of a material having a larger electron affinity than that of the AlN layer is interposed between the control electrode and the collecting electrode. This provides a junction transistor which allows electrons injected from the AlN layer to conduct through the conduction band of the insulating layer and then reach the collecting electrode.

Abstract: In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

Abstract: Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

Abstract: The object of the present invention is to provide a treatment method to remove lattice defects and non-diamond elements that exist in a diamond or a diamond thin film.The treatment method whereby the aforementioned object is achieved is to have the diamond or the diamond thin film irradiated by ultra-violet light or heated in an oxygen ambient.According to said treatment method, it has become possible to obtain a diamond or a diamond thin film that is free from the adverse effects of lattice defects and non-diamond elements.

Abstract: A diamond film of this invention is formed from growth nuclei distributed on a substrate at a density of at least 1.times.10.sup.10 numbers/cm.sup.2, the film is dense, having flat surface and great freedom in the thickness of the continuous film. The growth nuclei can be distributed at such a high density by, for example, dispersing diamond grains of average diameter of no more than 0.1 .mu.m in an acid solution, and distributing the grains on a substrate immersed in the solution by any means including ultrasonic vibration and voltage application. Such techniques for nucleation are simple and excellent in repeatability. The diamond film is formed on the substrate using the diamond grains as the growth nuclei by the plasma CVD or any other techniques.

Abstract: The present invention provides an electron emitting device for efficiently emitting electron beams by applying a forward bias to an MIS, pn, and a pin structure using a diamond layer so as to supply electrons from an electron supply layer to a p-type diamond layer. Furthermore, the present invention provides a method for easily and efficiently performing important production processes for producing a highly efficient electron emitting device having a diamond layer and controlling a surface state of the diamond layer. A multi-layer structure including an electrode layer, an electron supply layer and a diamond layer is used as the structure thereof. Alternatively, the electron affinity state of the surface of the diamond layer is arbitrarily controlled by a method such as ultraviolet ray irradiation.

Abstract: Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

Abstract: Crystalline carbon-based thin film structures are formed in which a compositionally-graded intermediate layer is first deposited on a substrate, and a crystalline carbon-based thin film such as silicon carbide or diamond is deposited thereafter on the intermediate layer. The compositionally-graded intermediate layer has a carbon content which increases in a direction away from the substrate. The compositionally-graded intermediate layer is effective in reducing problems associated with the lattice mismatch between the thin film and the substrate which hamper conventional hetero-epitaxial growth of high quality crystalline carbon-based thin films.

Abstract: An apparatus for refining brine including calcium and magnesium ions. Caustic alkali and carbonate alkali are added to the brine to produce a raw solution including flocks. The brine refining apparatus includes a settling tank having a supply of the raw solution for sinking the flocks to separate the flocks from the brine. A number of sheet members arranged in spaced-facing relation to each other within the settling tank. Each of the sheet members has a surface inclined at a predetermined angle with respect to a vertical plane crossing the corresponding sheet member.

Abstract: Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.

Abstract: A method for manufacturing substrates for depositing diamond thin films is disclosed.In the method, a hydrocarbon gas is discharge-decomposed, products generated by the discharge decomposition are accelerated to implant them in a surface layer of a substrate made of a material other than diamond and, thereby, the surface layer having bondings of carbon atoms and atoms compositing the substrate. Desirably, the substrate thus manufactured is subjected to a heat treatment at a temperature ranging from 800.degree. to 1,200.degree. C.

Abstract: In a device for reproducing the information, especially the video signal optically, magnetically or otherwise recorded on the spiral or concentric track on a disk-shaped recording medium, a control system for controlling the radially inward or outward shift or jump of a reproduction transducer from one track to another for effecting, in addition to the normal reproduction, the special effect reproductions such as still picture, slow, fast and reverse motions. The control system comprising a shifting means for shifting or jumping the transducer in the radial directions substantially perpendicular to the tracks, a control means for maintaining the transducer to scan the desired track, and a detecting means for detecting whether or not the transducer has been shifted or jumped and brought to the desired track and generating the output signal in response to which the shifting means is disabled to decelerate and stop the shifting or jumping of the transducer.

Abstract: A tracking control system for a magnetic video recording and reproducing system, in which a signal is recorded on a magnetic tape as record tracks at an angle with respect to the longitudinal direction of the tape and is reproduced therefrom by rotary magnetic heads. At the time of start of playback, the relative phase of scanning tracks of the rotary heads and the afore-said record tracks is automatically varied at a predetermined cycle. During the period of this variation, a phase position at which a maximum value of the level of the reproduced signal from the rotary heads is detected, and the phase variation is stopped at the detected phase position so as to let the scanning tracks of the rotary heads coincide with the record tracks.

Abstract: A recorded signal reproducing system includes a signal generator circuit which produces a tracking control signal in response to an output from a detection circuit which detects that a difference between an output of a peak hold circuit which holds a maximum amplitude of an envelope of a reproduced signal from a rotary head for a relatively long period and an output of an envelope detection circuit exceeds a predetermined threshold. The tracking control signal is used to control the relative positional relationship between the rotary head and a magnetic tape for controlling tracking during the playback operation.