Patents by Inventor Masahiro Gion
Masahiro Gion has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6853228Abstract: In a flip-flop circuit which includes an input section using a dynamic circuit and an output section using a static circuit and which captures data during a period of a pulse width shorter than a clock cycle, the number of transistors, circuit area and power consumption are reduced. In FIG. 1, an output signal of an inverter circuit INV1 constituting a latch circuit 2 connected to the output terminal of an input section 1 is used as an input signal of a control section 3. Thus, a control signal output from the control section 3 to the input section 1 is stabilized, thereby suppressing unnecessary operation of circuit elements and reducing unnecessary power consumption. In addition, the configuration of the control section 3 is simplified. As a result, the number of transistors constituting the circuit and the circuit area can be reduced.Type: GrantFiled: October 17, 2003Date of Patent: February 8, 2005Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Akio Hirata, Masahiro Gion, Kazuyuki Nakanishi
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Publication number: 20050007148Abstract: In a level shift circuit, for example, when an input signal IN changes from the L level to the H level, an N-type signal input transistor is made conducting and current flows in the N-type transistor. Accordingly, a first current mirror circuit amplifies the current flowing in the N-type transistor by predetermined number of times, increases the current driving capability for an inverted output node, and changes the inverted output node quickly to the L level. With the change to the L level of the inverted output node, an output node changes to the H level, a P-type transistor (first current interrupting circuit) is made non-conducting by the change, and the current fed from the first current mirror circuit is interrupted. Therefore, even when the power source voltage for the input signal and the inverted input signal is lowered, the operation is performed at high speed.Type: ApplicationFiled: June 8, 2004Publication date: January 13, 2005Inventor: Masahiro Gion
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Patent number: 6791391Abstract: In a CMOS level shifting circuit including N-channel transistors that have sources to which a digital signal is supplied, a bias voltage Vref is supplied to gates of the N-channel transistors, and the bias voltage Vref is set to be higher than a high level voltage of the digital signal and lower than a value obtained by adding a threshold voltage of the N-channel transistors to the high level voltage of the digital signal. Thus, a level shifting circuit is provided that is capable of outputting a signal having subjected to stable level conversion, even when a voltage level of a low voltage signal is lowered.Type: GrantFiled: July 10, 2002Date of Patent: September 14, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hidetoshi Nishimura, Masahiro Gion, Heiji Ikoma, Naoki Nojiri
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Publication number: 20040080351Abstract: In a flip-flop circuit which includes an input section using a dynamic circuit and an output section using a static circuit and which captures data during a period of a pulse width shorter than a clock cycle, the number of transistors, circuit area and power consumption are reduced.Type: ApplicationFiled: October 17, 2003Publication date: April 29, 2004Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO.Inventors: Akio Hirata, Masahiro Gion, Kazuyuki Nakanishi
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Patent number: 6703863Abstract: In a level shift circuit according to the invention, either an input signal IN or an inverted input signal XIN, which are input into the gate electrodes of n-type transistors for signal input, is also given to the substrate of that n-type transistor via p-type transistors for substrate bias. When the signal IN or XIN rises and changes, the threshold voltages of the n-type transistors for signal input is lowered due to the substrate bias effect. Consequently, even if the signal IN or XIN has a low voltage level, operation is carried out at high speeds. Also, when either an output signal OUT or an inverted output signal XOUT is changed to a high voltage level, the transistors for substrate bias become non-conducting, and thus the input signal IN or the inverted input signal XIN is not supplied to the substrate of the n-type transistors for signal input other than when the signal is changing. Consequently, a constant passing-through current does not flow to the substrate of these transistors.Type: GrantFiled: January 7, 2003Date of Patent: March 9, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventor: Masahiro Gion
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Patent number: 6681355Abstract: An anlog boundary scan compliant integrated circuit system carries out a test more reliably and cuts down on power dissipated during normal operation. To perform a test of whether or not an interconnect is connected normally between integrated circuits, multiple logic circuits with mutually different input threshold voltages are provided to detect the logical level of a potential at a terminal, thereby improving the reliability of the test. Potential fixers and power isolators are optionally provided. During normal operation, the power fixers fix the output potentials of the logic circuits, while the power isolators electrically isolate the logic circuits from the ground. As a result, no current flows through the logic circuits or other circuits in succeeding stages while no tests are carried out.Type: GrantFiled: March 30, 2000Date of Patent: January 20, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masahiro Gion, Masaya Hirose
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Publication number: 20030132778Abstract: In a level shift circuit according to the invention, either an input signal IN or an inverted input signal XIN, which are input into the gate electrodes of n-type transistors for signal input, is also given to the substrate of that n-type transistor via p-type transistors for substrate bias. When the signal IN or XIN rises and changes, the threshold voltages of the n-type transistors for signal input is lowered due to the substrate bias effect. Consequently, even if the signal IN or XIN has a low voltage level, operation is carried out at high speeds. Also, when either an output signal OUT or an inverted output signal XOUT is changed to a high voltage level, the transistors for substrate bias become non-conducting, and thus the input signal IN or the inverted input signal XIN is not supplied to the substrate of the n-type transistors for signal input other than when the signal is changing. Consequently, a constant passing-through current does not flow to the substrate of these transistors.Type: ApplicationFiled: January 7, 2003Publication date: July 17, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventor: Masahiro Gion
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Publication number: 20030011418Abstract: In a CMOS level shifting circuit including N-channel transistors that have sources to which a digital signal is supplied, a bias voltage Vref is supplied to gates of the N-channel transistors, and the bias voltage Vref is set to be higher than a high level voltage of the digital signal and lower than a value obtained by adding a threshold voltage of the N-channel transistors to the high level voltage of the digital signal. Thus, a level shifting circuit is provided that is capable of outputting a signal having subjected to stable level conversion, even when a voltage level of a low voltage signal is lowered.Type: ApplicationFiled: July 10, 2002Publication date: January 16, 2003Applicant: Matsushita Electric Industrial Co., Ltd.Inventors: Hidetoshi Nishimura, Masahiro Gion, Heiji Ikoma, Naoki Nojiri
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Patent number: 5929939Abstract: There is provided a correlation degree operation apparatus in which the search area is readily extensible, in which a high-speed process can be assured even though the search area is extended, and which can be formed in a simple arrangement. The search area memory stores the picture element data of a search area including ((m.times.M).times.L) candidate blocks. The correlation degree operation unit executes an operation of a degree of correlation between a reference picture block and each of the candidate blocks, with the use of picture element data supplied from the search area memory, this operation being executed by a pipeline process for each candidate block group composed of (M.times.L) candidate blocks. The search area memory has the function of supplying four picture element data at the same clock cycle. This enables the correlation degree operation unit to continuously execute the pipeline processes for the candidate block groups.Type: GrantFiled: April 18, 1996Date of Patent: July 27, 1999Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Akihiko Ohtani, Yoshifumi Matsumoto, Akira Sota, Katsuji Aoki, Hisato Yoshida, Masahiro Gion, Atsushi Ubukata
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Patent number: 5548665Abstract: A subtracter performs a subtraction (Xi-Yi) per corresponding components of two pairs of N-dimensional vector data (X1, X2, . . . XN), (Y1, Y2, . . . , YN). An exclusive disjunction circuit selects (Xi-Yi) when a result of subtraction is positive, and inverts bits of the result of subtraction to select the bit-inverted data (Xi-Yi) when the result of subtraction is negative. The selection is carried out using a most significant bit of the result of subtraction as a control signal. An accumulator accumulates the selected data and a value of the most significant bit of the result of subtraction. Accordingly only one subtracter suffice. Since the operation of adding 1 to the inverted data of the result of subtraction when the result of subtraction is negative is carried out concurrently with the accumulation of the result of subtraction by the accumulator, a vector correlation detecting circuit with less element and reduced operation time is contemplated.Type: GrantFiled: September 9, 1993Date of Patent: August 20, 1996Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masahiro Gion, Masaki Toyokura