Abstract: A light source device includes a semiconductor light source that radiates light at a light quantity according to an applied current, a circuit that determines a current instruction value based on control information, first and second drive units, each of the units that is connected to the semiconductor light source and the circuit, and is capable of outputting, to the semiconductor light source, a current having magnitude corresponding to the current instruction value. The control information is set based on brightness of an image captured by an imaging element. When one of the first and second drive units is switched to the other, the circuit causes the other to start the current output after an elapse of a predetermined stop time period having a length at a predetermined ratio or less to a frame rate on the imaging element since a stop of the current output from the one.

Abstract: It is an object of the present invention to reduce the amount of data used in an apparatus, a system, and a method for performing a substrate processing. In order to achieve this object, a substrate processing apparatus includes one or more processing units each for performing a processing on a substrate and one or more arithmetic processing parts. One or more arithmetic processing parts generate a flow recipe defining a flow of a series of processings for a substrate by combining two or more processing recipes among a plurality of processing recipes each defining a processing condition relating to a processing to be performed on a substrate in the one or more processing units. The plurality of processing recipes include a plurality of liquid processing recipes each defining a condition of a processing to be performed on a substrate by using a processing liquid.

Abstract: According to one embodiment, an automatic analyzing apparatus includes processing circuitry. The processing circuitry carries out a calibration measurement to prepare a calibration curve for a test item, and then carries out an accuracy management measurement to calculate an accuracy of the prepared calibration curve, determines whether or not the calculated accuracy is within an acceptable range, specifies, if the calculated accuracy is within the acceptable range, an analyte for which the test item needs to be recomputed, and recomputes the test item of the specified analyte using the prepared calibration curve.

Abstract: A flush water tank apparatus has a reservoir tank, a discharge valve, a discharge valve hydraulic drive portion configured to drive the discharge valve, and a discharge/vacuum break valve device configured to supply the water supplied from the upstream side to the discharge valve hydraulic drive portion on a downstream side. The discharge valve hydraulic drive portion includes a cylinder, and a piston configured to be moved by a pressure of the water flowing into the cylinder to move the discharge valve. The discharge/vacuum break valve device includes a valve body that operates to discharge the water flowing backward from the discharge valve hydraulic drive portion while opening the upstream side to an atmosphere when the supply of the water from the upstream side is stopped.

Abstract: A diagnostic imaging assistance device 1 comprises: a first acquisition unit 10 for acquiring an image of a head through MRI; an image processing unit 11 for extracting a region containing information on a lesion site and the periphery of the lesion site from the acquired image of the head and generating a first image having the extracted region; an extraction unit 12 for extracting a predetermined image feature amount from the first image; a classification unit 14 for determining, on the basis of the image feature amount extracted by the extraction unit 12, the presence or absence of a molecular biomarker associated with the lesion site for classification using a pre-constructed classifier; and a presentation unit 15 for presenting assistance information related to whether or not the lesion site contained in the image of the head has the molecular biomarker, on the basis of the result of the classification by the classification unit 14.

Abstract: A second polymer is prepared through derivatization of a first polymer. Kendrick Mass Defect (KMD) analysis is applied on a mass spectrum of the second polymer, to thereby produce a plot. Meanwhile, a plurality of mass candidates for a non-primary-chain segment are calculated based on a mass spectrum of the first polymer. The KMD analysis is applied on the plurality of mass candidates, to thereby produce reference images. A mass of the non-primary-chain segment is identified through matching of two KMD analysis results.

Abstract: The present invention aims to provide a viscosity-index improving agent having an excellent friction reduction effect to reduce friction of a lubricating oil composition when the viscosity-index improving agent is added thereto. The present also aims to provide a lubricating oil composition containing the viscosity-index improving agent. The present invention relates to, for example, a viscosity-index improving agent containing: (co)polymer (A) containing, as an essential constituent monomer, a polyolefin-based monomer (a) represented by the following formula (1); an ester oil (B1) having a kinematic viscosity at 100° C. of 1.00 to 2.50 mm2/s; and an ester oil (B2) having a kinematic viscosity at 100° C. of 2.51 to 5.

Abstract: The present invention aims to provide a viscosity-index improving agent capable of providing a lubricating oil composition having an appropriate gelation index, an excellent HTHS viscosity at 100° C., and an excellent kinematic viscosity at 40° C. when the viscosity-index improving agent is added thereto. The present also aims to provide a lubricating oil composition containing the viscosity-index improving agent.

Abstract: The present disclosure relates a photosensitive resin composition containing (A) an alkali-soluble resin having an imide bond and a phenolic hydroxyl group and (B) a compound that generates acid by light, a patterned cured film using the photosensitive resin composition, a method for producing a patterned cured film, and a semiconductor element.

Abstract: A molded article includes a fiber-reinforced composite material in which reinforcing fibers are impregnated with a matrix resin, wherein components A, B, and C: Component A: a fiber-reinforced base material in which continuous reinforcing fibers are impregnated with a PPS resin is applied as the matrix resin, and a volume content of fiber Vf?A in the component A is Vf?A=50 to 70 vol %; Component B: a fiber-reinforced base material in which the continuous reinforcing fibers are impregnated with the matrix resin, the PPS resin and a PPS resin having a melting point TmB lower than a melting point TmA of the PPS resin are applied as the matrix resins, and a volume content of fiber Vf?B in the component B is Vf?B<Vf?A; and Component C: a fiber-reinforced resin obtained by impregnating discontinuous reinforcing fibers with the PPS resin is applied as the matrix resin.

Abstract: An automatic landing system includes an imaging device mounted on a vertical take-off and landing aircraft; a relative-position acquisition unit that performs image processing on an image of a marker at a target landing point, and that acquires a relative position between the aircraft and the target landing point; a relative-altitude acquisition unit for acquiring a relative altitude between the aircraft and the target landing point; and a control unit for controlling the aircraft in a plurality of control modes so that the relative position becomes zero. The control modes include a hovering mode in which the relative altitude of the aircraft is lowered to a predetermined relative altitude when the relative position is within a first threshold value. A transition to a landing mode occurs upon satisfying predetermined conditions including the relative position being within a predetermined threshold value less than the first threshold value.

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Abstract: A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.

Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.

Abstract: Provided is a mask blank including a phase shift film The phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order from a side of the transparent substrate. Refractive indexes n1, n2, and n3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relations n1>n2 and n2<n3. Extinction coefficients k1, k2, and k3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of the exposure light satisfy the relations k1<k2 and k2>k3. Film thicknesses d1, d2, and d3 of the first layer, the second layer, and the third layer, respectively, satisfy the relations d1<d3 and d2<d3.

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]<4/7), and Si—Si bonds present is 0.05 or less. A ratio of a number of SiaNb bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds present is 0.1 or more.

Abstract: A mask blank includes a light shielding film for forming a transfer pattern, provided on a transparent substrate. The light shielding film is made of a material that consists of silicon and nitrogen or that further includes one or more elements selected from a metalloid element and a non-metallic element. In an inner region of the light shielding film (excluding a vicinity region of an interface of the light shielding film with the transparent substrate and a surface layer region of the light shielding film opposite the transparent substrate), the ratio of Si3N4 bonds to the total number of Si3N4 bonds, SiaNb bonds (where a relationship b/[a+b]<4/7 is satisfied), and Si—Si bonds is 0.04 or less, and the ratio of SiaNb bonds to the total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds is 0.1 or more.