Patents by Inventor Masahiro Hashimoto

Masahiro Hashimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11075312
    Abstract: A solar cell module includes solar cells having main surfaces to which inter-cell wiring members are connected, and an insulating member disposed on the main surfaces and the wiring members, and a first lead-out wire provided to the insulating member. The insulating member includes a first insulating layer formed of polyester resin, a second insulating layer formed of polyolefin or EVA and provided between the first insulating layer and the lead-out wires, and a third insulating layer formed of polyolefin or EVA and provided between the first insulating layer and the main surfaces. The third insulating layer has a thickness in a direction perpendicular to the main surfaces larger than a thickness of the second insulating layer.
    Type: Grant
    Filed: March 29, 2017
    Date of Patent: July 27, 2021
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Youhei Murakami, Haruhisa Hashimoto, Tasuku Ishiguro, Masahiro Iwata, Hiroyuki Kannou, Ryoji Naito, Kazuki Ohta
  • Patent number: 11061316
    Abstract: A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: July 13, 2021
    Assignees: HOYA CORPORATION, HOYA ELECTRONICS SINGAPORE PTE. LTD.
    Inventors: Masahiro Hashimoto, Mariko Uchida, Isao Kawasumi
  • Publication number: 20210208497
    Abstract: Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes n1 and n2 of the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n1<n2. Extinction coefficients k1 and k2 of the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k1<k2. Film thicknesses d1 and d2 of the first layer and the second layer, respectively, satisfy the relation d1<d2.
    Type: Application
    Filed: May 8, 2019
    Publication date: July 8, 2021
    Applicant: HOYA CORPORATION
    Inventors: Hitoshi MAEDA, Hiroaki SHISHIDO, Masahiro HASHIMOTO
  • Patent number: 11048160
    Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.
    Type: Grant
    Filed: May 16, 2018
    Date of Patent: June 29, 2021
    Assignee: HOYA CORPORATION
    Inventors: Masahiro Hashimoto, Hiroaki Shishido
  • Publication number: 20210149293
    Abstract: This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kU of the upper layer for the exposure light is higher than the extinction coefficient kL of the lower layer for the exposure light.
    Type: Application
    Filed: May 16, 2018
    Publication date: May 20, 2021
    Applicant: HOYA CORPORATION
    Inventors: Masahiro HASHIMOTO, Hiroaki SHISHIDO
  • Publication number: 20210132488
    Abstract: Provided is a mask blank including a phase shift film The phase shift film has a structure where a first layer, a second layer, and a third layer are stacked in this order from a side of the transparent substrate. Refractive indexes n1, n2, and n3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relations n1>n2 and n2<n3. Extinction coefficients k1, k2, and k3 of the first layer, the second layer, and the third layer, respectively, at a wavelength of the exposure light satisfy the relations k1<k2 and k2>k3. Film thicknesses d1, d2, and d3 of the first layer, the second layer, and the third layer, respectively, satisfy the relations d1<d3 and d2<d3.
    Type: Application
    Filed: May 8, 2019
    Publication date: May 6, 2021
    Applicant: HOYA CORPORATION
    Inventors: Hiroaki SHISHIDO, Hitoshi MAEDA, Masahiro HASHIMOTO
  • Publication number: 20200379338
    Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]<4/7), and Si—Si bonds present is 0.05 or less. A ratio of a number of SiaNb bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds present is 0.1 or more.
    Type: Application
    Filed: October 31, 2018
    Publication date: December 3, 2020
    Applicants: HOYA CORPORATION, HOYA ELECTRONICS SINGAPORE PTE. LTD.
    Inventors: Hiroaki SHISHIDO, Masahiro HASHIMOTO, Takashi UCHIDA, Mariko UCHIDA
  • Publication number: 20200166833
    Abstract: A mask blank includes a light shielding film for forming a transfer pattern, provided on a transparent substrate. The light shielding film is made of a material that consists of silicon and nitrogen or that further includes one or more elements selected from a metalloid element and a non-metallic element. In an inner region of the light shielding film (excluding a vicinity region of an interface of the light shielding film with the transparent substrate and a surface layer region of the light shielding film opposite the transparent substrate), the ratio of Si3N4 bonds to the total number of Si3N4 bonds, SiaNb bonds (where a relationship b/[a+b]<4/7 is satisfied), and Si—Si bonds is 0.04 or less, and the ratio of SiaNb bonds to the total number of Si3N4 bonds, SiaNb bonds, and Si—Si bonds is 0.1 or more.
    Type: Application
    Filed: May 15, 2018
    Publication date: May 28, 2020
    Applicants: Hoya Corporation, Hoya Electronics Singapore PTE. Ltd.
    Inventors: Masahiro HASHIMOTO, Mariko UCHIDA
  • Publication number: 20200039111
    Abstract: A preform element has a tucked portion in at least a portion of a prepreg composed of a reinforced fiber and a thermosetting resin. The preform element, a preform using the same, and a method of producing the same, provide for the preform element to have excellent mechanical properties or filling characteristics with respect to a cavity and is effective in avoiding problems such as fiber bridging or resin richness or warping, even when a three-dimensional form having thickness variations such as thick parts or projections is obtained through a press molding.
    Type: Application
    Filed: February 7, 2018
    Publication date: February 6, 2020
    Inventors: Yusuke Tsumura, Masahiro Hashimoto
  • Publication number: 20190389185
    Abstract: A prepreg is formed by impregnating reinforcing fibers with a heat-curable resin with a cure extent greater than or equal to 3% and less than 50%, chopped prepreg obtained by cutting the prepreg is dispersed in a flat shape, and the chopped prepreg is thermally bonded together to form a fiber reinforced resin sheet. The fiber reinforced resin sheet can be used in press forming, has excellent uniformity of basis weight as a forming material allowing dense filling into a mold, and enables obtaining a shaped product that has excellent mechanical characteristics because of increased volume content of the reinforcing fibers.
    Type: Application
    Filed: February 7, 2018
    Publication date: December 26, 2019
    Inventors: Masahiro Hashimoto, Masaaki Yamasaki, Yusuke Tsumura
  • Publication number: 20190369485
    Abstract: A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.
    Type: Application
    Filed: November 1, 2017
    Publication date: December 5, 2019
    Applicants: HOYA CORPORATION, HOYA ELECTRONICS SINGAPORE PTE. LTD.
    Inventors: Masahiro HASHIMOTO, Mariko UCHIDA, Isao KAWASUMI
  • Publication number: 20180244874
    Abstract: This invention relates to an epoxy resin composition for a fiber-reinforced composite material, which contains at least the following constituent components [A], [B], [C] and [D]: [A] at least one epoxy resin (other than a cycloaliphatic epoxy resin represented by formula (I)); [B] at least one amine curing agent [C] at least one latent add catalyst [D] at least one cycloaliphatic epoxy resin represented by formula (I), wherein Y is a single bond or represents a divalent structure having a molecular weight less than 45 g/mol This epoxy resin composition is useful in the molding of fiber-reinforced composite materials. More particularly, it is possible to offer an epoxy resin composition for a fiber-reinforced composite material where the cured material obtained by heating has a high level heat resistance and strength properties.
    Type: Application
    Filed: August 26, 2016
    Publication date: August 30, 2018
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Benjamin Lehman, Masahiro Hashimoto, Jonathan Hughes, Takayuki Fujiwara
  • Patent number: 10042247
    Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: August 7, 2018
    Assignees: HOYA CORPORATION, NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro Hiromatsu, Masahiro Hashimoto, Yasushi Sakaida, Ryuta Mizuochi, Rikimaru Sakamoto, Masaki Nagai
  • Patent number: 9927697
    Abstract: Provided is a mask blank, including: a resist layer formed by a chemically amplified resist; a protective layer formed to coat the resist layer; and a buffer layer provided between the resist layer and the protective layer, wherein the protective layer contains an acidic substance, a basic substance, and a salt generated by a reaction between the acidic substance and the basic substance, and the buffer layer has a portion which is a surface layer portion of a pre-coated resist layer before being coated by the protective layer, and in which the pre-coated resist layer and the protective layer 4 are in contact with each other, and this portion is formed by receiving the acidic substance, the basic substance, and the salt moved from the protective layer 4.
    Type: Grant
    Filed: August 1, 2014
    Date of Patent: March 27, 2018
    Assignee: HOYA CORPORATION
    Inventors: Takahiro Hiromatsu, Masahiro Hashimoto
  • Publication number: 20170285460
    Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.
    Type: Application
    Filed: August 25, 2015
    Publication date: October 5, 2017
    Applicants: HOYA CORPORATION, NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro HIROMATSU, Masahiro HASHIMOTO, Yasushi SAKAIDA, Ryuta MIZUOCHI, Rikimaru SAKAMOTO, Masaki NAGAI
  • Patent number: 9746764
    Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: August 29, 2017
    Assignees: HOYA CORPORATION, NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Takahiro Hiromatsu, Masahiro Hashimoto, Yasushi Sakaida, Ryuta Mizuochi, Rikimaru Sakamoto, Masaki Nagai
  • Patent number: 9651859
    Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: May 16, 2017
    Assignee: HOYA CORPORATION
    Inventors: Masahiro Hashimoto, Atsushi Kominato, Hiroyuki Iwashita, Osamu Nozawa
  • Patent number: 9612527
    Abstract: A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: April 4, 2017
    Assignee: HOYA CORPORATION
    Inventors: Atsushi Kominato, Masahiro Hashimoto, Osamu Nozawa
  • Patent number: 9535320
    Abstract: Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: January 3, 2017
    Assignee: HOYA CORPORATION
    Inventors: Kazuya Sakai, Masahiro Hashimoto
  • Patent number: 9469740
    Abstract: A carbon-fiber-reinforced plastic prepared by impregnating a matrix resin into a sheet-like base material includes discontinuous carbon fibers, wherein a content ratio of carbon fibers having lengths of 10 mm or longer in the base material is 60 wt % or more relative to a total amount of the carbon fibers, and an average value of orientation degrees of carbon fibers contained in the base material is 2-10.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: October 18, 2016
    Assignee: Toray Industries, Inc.
    Inventors: Takafumi Hashimoto, Hirohito Minowa, Takashi Shimada, Masahiro Hashimoto, Katsuhiro Miyoshi, Yoshihiro Naruse