Abstract: A prepreg is formed by impregnating reinforcing fibers with a heat-curable resin with a cure extent greater than or equal to 3% and less than 50%, chopped prepreg obtained by cutting the prepreg is dispersed in a flat shape, and the chopped prepreg is thermally bonded together to form a fiber reinforced resin sheet. The fiber reinforced resin sheet can be used in press forming, has excellent uniformity of basis weight as a forming material allowing dense filling into a mold, and enables obtaining a shaped product that has excellent mechanical characteristics because of increased volume content of the reinforcing fibers.

Abstract: A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.

Abstract: This invention relates to an epoxy resin composition for a fiber-reinforced composite material, which contains at least the following constituent components [A], [B], [C] and [D]: [A] at least one epoxy resin (other than a cycloaliphatic epoxy resin represented by formula (I)); [B] at least one amine curing agent [C] at least one latent add catalyst [D] at least one cycloaliphatic epoxy resin represented by formula (I), wherein Y is a single bond or represents a divalent structure having a molecular weight less than 45 g/mol This epoxy resin composition is useful in the molding of fiber-reinforced composite materials. More particularly, it is possible to offer an epoxy resin composition for a fiber-reinforced composite material where the cured material obtained by heating has a high level heat resistance and strength properties.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: Provided is a mask blank, including: a resist layer formed by a chemically amplified resist; a protective layer formed to coat the resist layer; and a buffer layer provided between the resist layer and the protective layer, wherein the protective layer contains an acidic substance, a basic substance, and a salt generated by a reaction between the acidic substance and the basic substance, and the buffer layer has a portion which is a surface layer portion of a pre-coated resist layer before being coated by the protective layer, and in which the pre-coated resist layer and the protective layer 4 are in contact with each other, and this portion is formed by receiving the acidic substance, the basic substance, and the salt moved from the protective layer 4.

Abstract: There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract: A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

Abstract: Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

Abstract: A carbon-fiber-reinforced plastic prepared by impregnating a matrix resin into a sheet-like base material includes discontinuous carbon fibers, wherein a content ratio of carbon fibers having lengths of 10 mm or longer in the base material is 60 wt % or more relative to a total amount of the carbon fibers, and an average value of orientation degrees of carbon fibers contained in the base material is 2-10.

Abstract: A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Abstract: A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.

Abstract: A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN??0.00526CMo2?0.640CMo+26.624.

Abstract: There is provided a mask blank, including: a resist layer 2 formed by a chemically amplified resist; a protective layer 4 formed to coat the resist layer 2; and a buffer layer 3 provided between the resist layer 2 and the protective layer 4, wherein the protective layer 4 contains an acidic substance, a basic substance, and a salt generated by a reaction between the acidic substance and the basic substance, and the buffer layer 3 has a portion which is a surface layer portion of a pre-coated resist layer 20 before being coated by the protective layer 4, and in which the pre-coated resist layer 20 and the protective layer 4 are in contact with each other, and this portion is formed by receiving the acidic substance, the basic substance, and the salt moved from the protective layer 4.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract: A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

Abstract: Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Abstract: Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

Abstract: A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.