Patents by Inventor Masahiro Hikita

Masahiro Hikita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200282774
    Abstract: To improve uneven wear resistance performance while maintaining drainage performance. A tyre is provided with a plurality of inclined grooves in a tread portion. Each of the inclined grooves includes a first portion arranged on a crown region side, a second portion arranged on a shoulder region side, and a third portion connecting between the first portion and the second portion. In a ground contacting surface of the tread portion, the third portion has a groove width smaller than the first portion and the second portion. The third portion includes an outer portion arranged on the ground contacting surface side and an inner portion arranged radially inside the outer portion. The inner portion has a groove width larger than the outer portion.
    Type: Application
    Filed: February 18, 2020
    Publication date: September 10, 2020
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventor: Masahiro HIKITA
  • Publication number: 20200282775
    Abstract: To improve uneven wear resistance performance while maintaining drainage performance. A tyre is provided with a plurality of inclined grooves in a tread portion. Each of the inclined grooves extends from a crown region to a shoulder region. Each of the inclined grooves includes a first portion arranged on the crown region side, a second portion arranged on the shoulder region side, and a third portion connecting between the first portion and the second portion. The third portion has a groove width smaller than the first portion and the second portion. The first portion, the second portion, and the third portion are inclined to the same side with respect to the tyre circumferential direction.
    Type: Application
    Filed: February 18, 2020
    Publication date: September 10, 2020
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventor: Masahiro HIKITA
  • Publication number: 20200119178
    Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer disposed above the substrate; a second nitride semiconductor layer disposed above the first nitride semiconductor layer and having a band gap larger than a band gap of the first nitride semiconductor layer; a third nitride semiconductor layer selectively disposed above the second nitride semiconductor layer and containing a p-type first impurity element; a high resistance region disposed in the third nitride semiconductor layer, the high resistance region containing a second impurity element and having a specific resistance higher than a specific resistance of the third nitride semiconductor layer; and a gate electrode disposed above the high resistance region, wherein an end of the high resistance region is inside a surface end of the third nitride semiconductor layer.
    Type: Application
    Filed: December 9, 2019
    Publication date: April 16, 2020
    Inventors: Hideyuki OKITA, Manabu YANAGIHARA, Masahiro HIKITA
  • Publication number: 20200105917
    Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer; a second nitride semiconductor layer having a greater band gap than the first nitride semiconductor layer; a source electrode and a drain electrode on the second nitride semiconductor layer apart from each other; a third nitride semiconductor layer, between the source electrode and the drain electrode, containing a p-type first impurity and serving as a gate; and a fourth nitride semiconductor layer, between the third nitride semiconductor layer and the drain electrode, containing a p-type second impurity, wherein the average carrier concentration of the fourth nitride semiconductor layer is lower than the average carrier concentration of the third nitride semiconductor layer.
    Type: Application
    Filed: September 18, 2019
    Publication date: April 2, 2020
    Inventors: Hideyuki OKITA, Manabu YANAGIHARA, Takahiro SATO, Masahiro HIKITA
  • Publication number: 20200055348
    Abstract: A tyre for running on rough terrain includes a tread portion. The tread portion includes a crown region, middle regions, and shoulder regions. The crown region is provided with a plurality of crown blocks. The middle regions are provided with a plurality of middle blocks. The shoulder regions are provided with a plurality of shoulder blocks. Each of the middle blocks is connected with at least one of the crown blocks by a crown tie bar and connected with at least one of the shoulder blocks by a shoulder tie bar. A land ratio of the shoulder regions is 90% or more and 115% or less of a land ratio of the crown region.
    Type: Application
    Filed: July 26, 2019
    Publication date: February 20, 2020
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Masahiro Hikita
  • Publication number: 20190275839
    Abstract: A tire comprises a tread reinforcing layer comprising a cord-reinforced part formed by winding a rubberized cord strip with at least one reinforcing cord covered with a topping rubber. The cord-reinforced part includes a mesh part in which first inclined segments and second inclined segments of the rubberized cord strip are inclined to opposite directions with respect to the tire circumferential direction. The first inclined segments intersect the second inclined segments, leaving space parts each having a quadrilateral shape. The mesh part has a tire-equator-side first region, a tread-edge-side second region and a third region therebetween, wherein the space parts within the tire-equator-side first region each have an area A1, the space parts within the tread-edge-side second region each have an area A2, and the space parts within the third region each have an area A3 which is smaller than the area A1 and larger than the area A2.
    Type: Application
    Filed: March 11, 2019
    Publication date: September 12, 2019
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventors: Masahiro HIKITA, Kyosuke KONO
  • Publication number: 20190184757
    Abstract: A tire includes a tread portion provided with blocks each protruding toward a ground contact surface thereof from a tread bottom surface, and axially spaced side portions each extending from the tread portion to a respective bead portion. The blocks include shoulder blocks spaced. The shoulder blocks each include an overhanging portion located axially outside the corresponding side portion. The overhanging portion includes a pair of first walls extending in substantially parallel with a tire meridian cross-section. The shoulder blocks have shoulder block lengths which are lengths in the tire circumferential direction measured between the pair of first walls along the ground contact surface, wherein the shoulder block lengths are shorter than gap lengths which are lengths in the tire circumferential direction measured on the tread bottom surface between adjacent shoulder blocks.
    Type: Application
    Filed: November 29, 2018
    Publication date: June 20, 2019
    Applicant: Sumitomo Rubber Industries, Ltd.
    Inventor: Masahiro Hikita
  • Publication number: 20190148031
    Abstract: A method for preventing occurrence of creeping electrical discharge at a resin surface, the method being characterized by including dispersing nanosized inorganic fine particles in a resin, thereby preventing occurrence of creeping electrical discharge at the surface of a cured product of the resin.
    Type: Application
    Filed: June 28, 2017
    Publication date: May 16, 2019
    Applicants: NISSAN CHEMICAL CORPORATION, KYUSHU INSTITUTE OF TECHNOLOGY
    Inventors: Naohiko SUEMURA, Tomohisa ISHIDA, Masahiro KOZAKO, Masayuki HIKITA, Kyunghoon JANG, Takao AKAHOSHI
  • Publication number: 20190039417
    Abstract: The disclosure provides a method of manufacturing a motorcycle tire for uneven terrain travel in which both a rigid feeling at the time of driving and a shock absorbing ability are able to be achieved. Provided is a method of manufacturing a motorcycle tire for uneven terrain travel including a process of molding a green tire including a tread portion, a pair of sidewall portions and a pair of bead portions, and a vulcanization process of vulcanizing the green tire using a mold. In the mold, a clip width, which is a distance in a tire axial direction between a pair of bead molding surfaces which form outer surfaces of the pair of bead portions, is 100% to 110% of a rim width of a normal rim to which a completed motorcycle tire is attached.
    Type: Application
    Filed: May 17, 2018
    Publication date: February 7, 2019
    Applicant: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventors: MASAHIRO HIKITA, SHIZUYA AOKI
  • Patent number: 10090220
    Abstract: A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: October 2, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Ayanori Ikoshi, Masahiro Hikita, Keiichi Matsunaga, Takahiro Sato, Manabu Yanagihara
  • Publication number: 20180248027
    Abstract: A semiconductor device includes: a substrate; a channel layer constituted of a single nitride semiconductor on the substrate; a first barrier layer which is a nitride semiconductor on a part of an upper surface of the channel layer and having a band gap larger than that of the channel layer; a gate layer which is a nitride semiconductor on and in contact with the first barrier layer; a second barrier layer which is a nitride semiconductor in contact with the first barrier layer in an area where the gate layer is not disposed above the channel layer, and having a band gap larger than that of the channel layer and having a thickness or a band gap independent from the first barrier layer; a gate electrode on the gate layer; and a source electrode and a drain electrode spaced apart from the gate layer and on the second barrier layer.
    Type: Application
    Filed: April 20, 2018
    Publication date: August 30, 2018
    Inventors: Hideyuki Okita, Masahiro Hikita, Yasuhiro Uemoto
  • Patent number: 9859413
    Abstract: A nitride semiconductor device including a substrate, a channel layer, a carbon-poor barrier layer having a recess, a carbon-rich barrier layer disposed over the recess and the carbon-poor barrier layer, and a gate electrode above the recess, wherein the carbon-poor and carbon-rich barrier layers have bandgaps larger than that of the channel layer, the upper surface of the carbon-rich barrier layer includes a first main surface including a source electrode and a drain electrode, and a bottom surface of a depression disposed along the recess, and side surfaces of the depression connecting the first main surface to the bottom surface of the depression, and among edges of the depression of the carbon-rich barrier layer which are boundaries between the first main surface and the side surfaces of the depression, the edge of the depression of the carbon-rich barrier layer closest to the drain electrode is covered with the gate electrode.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: January 2, 2018
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Hideyuki Okita, Masahiro Hikita, Hisayoshi Matsuo, Yasuhiro Uemoto
  • Patent number: 9783007
    Abstract: An off-road pneumatic tire has a tread having an outer surface forming a tread surface, the tread including a body and multiple blocks projecting from the body substantially outward in radial direction. The blocks have a center block group, a pair of shoulder block groups and a pair of middle block groups. The center group includes center blocks at interval in circumferential direction on plane of equator. Each shoulder group includes shoulder blocks at interval in the circumferential direction on an edge of the tread surface. Each middle group includes middle blocks at interval in the circumferential direction between the center and one shoulder groups. The center group has units each having first, second, third and fourth center blocks in the order of the first, second, third and fourth blocks in the circumferential direction.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: October 10, 2017
    Assignee: SUMITOMO RUBBER INDUSTRIES LTD.
    Inventor: Masahiro Hikita
  • Patent number: 9761670
    Abstract: A semiconductor device having: a substrate; a nitride semiconductor layer including a first semiconductor layer made of GaN or InxGa1-xN (0<x?1) and formed on the substrate and a second semiconductor layer containing Al and formed on the first semiconductor layer; and a protective film formed on the set of nitride semiconductor layers. The nitride semiconductor layer has an active section and an inactive section surrounding the active section, and a portion of the second semiconductor layer has been removed from the inactive section.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: September 12, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Masahiro Hikita, Manabu Yanagihara, Yasuhiro Uemoto
  • Patent number: 9685549
    Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer (1) located over the substrate; a second nitride semiconductor layer (2) located over the first nitride semiconductor layer (1), having a larger band gap than the first nitride semiconductor layer (1), and having a recess (11) penetrating into the first nitride semiconductor layer (1); and a third nitride semiconductor layer (12) continuously covering the second nitride semiconductor layer (2) and the recess (11), and having a larger band gap than the first nitride semiconductor layer (1); a gate electrode (5) located above a portion of the third nitride semiconductor layer (12) over the recess (11); and a first ohmic electrode (4a) and a second ohmic electrode (4b) located on opposite sides of the gate electrode (5).
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: June 20, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Hideyuki Okita, Yasuhiro Uemoto, Masahiro Hikita, Hidenori Takeda, Takahiro Sato, Akihiko Nishio
  • Publication number: 20170148701
    Abstract: A semiconductor device includes a substrate; a semiconductor layer; a first protective film; a first adhesive layer disposed on the first protective film; an electrode pad disposed on the first protective film; a second protective film disposed to cover and be in contact with the electrode pad and the first adhesive layer; and a first opening formed in part of the second protective film such that the upper surface of the electrode pad is exposed, wherein in a plan view, the first adhesive layer includes a first projection projecting from the electrode pad radially in a direction of the periphery of the electrode pad and continuously surrounding the periphery of the electrode pad; and the second protective film is continuously to cover and contact part of the upper and side surfaces of the electrode pad, the upper and side surfaces of first projection, and the first protective film.
    Type: Application
    Filed: February 8, 2017
    Publication date: May 25, 2017
    Inventors: Ayanori IKOSHI, Masahiro HIKITA, Keiichi MATSUNAGA, Takahiro SATO, Manabu YANAGIHARA
  • Publication number: 20170117403
    Abstract: A nitride semiconductor device including a substrate, a channel layer, a carbon-poor barrier layer having a recess, a carbon-rich barrier layer disposed over the recess and the carbon-poor barrier layer, and a gate electrode above the recess, wherein the carbon-poor and carbon-rich barrier layers have bandgaps larger than that of the channel layer, the upper surface of the carbon-rich barrier layer includes a first main surface including a source electrode and a drain electrode, and a bottom surface of a depression disposed along the recess, and side surfaces of the depression connecting the first main surface to the bottom surface of the depression, and among edges of the depression of the carbon-rich barrier layer which are boundaries between the first main surface and the side surfaces of the depression, the edge of the depression of the carbon-rich barrier layer closest to the drain electrode is covered with the gate electrode.
    Type: Application
    Filed: January 5, 2017
    Publication date: April 27, 2017
    Inventors: Hideyuki OKITA, Masahiro HIKITA, Hisayoshi MATSUO, Yasuhiro UEMOTO
  • Patent number: 9577084
    Abstract: A semiconductor device includes a substrate, a semiconductor layer stacked body, and a source electrode and a drain electrode formed on the semiconductor layer stacked body. The semiconductor layer stacked body includes a first nitride semiconductor layer formed on the substrate, and a second nitride semiconductor layer formed on the first nitride semiconductor layer. The semiconductor device further includes a third nitride semiconductor layer formed on the second nitride semiconductor layer and disposed between the source electrode and the drain electrode, and a gate electrode formed on the third nitride semiconductor layer. The semiconductor device includes a first magnesium-containing region having a magnesium concentration of 1×1018 cm?3 or more that is provided right under the third nitride semiconductor layer, from an upper surface of the second nitride semiconductor layer to a position lower than an interface between the first nitride semiconductor layer and the second nitride semiconductor layer.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: February 21, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Masahiro Hikita, Hideyuki Okita
  • Patent number: 9412858
    Abstract: A semiconductor device includes a substrate, a first nitride semiconductor layer formed on the substrate, a p-type nitride semiconductor layer formed on the first nitride semiconductor layer, a recess having a bottom portion which reaches the first nitride semiconductor layer through a part of the p-type nitride semiconductor layer, a third nitride semiconductor layer formed to cover the bottom portion of the recess, a side portion of the recess, and a part of an upper surface of the p-type nitride semiconductor layer. The semiconductor device further includes a fourth nitride semiconductor layer formed on the third nitride semiconductor layer, a first electrode formed on another side of the substrate, a gate electrode formed on the upper surface of the p-type nitride semiconductor layer, and a second electrode that is in contact with the third nitride semiconductor layer or the fourth nitride semiconductor layer.
    Type: Grant
    Filed: December 30, 2015
    Date of Patent: August 9, 2016
    Assignee: PANASONIC INTELLECTUAL PEOPERTY MANAGEEMENT CO., LTD.
    Inventors: Hideyuki Okita, Masahiro Hikita, Yasuhiro Uemoto
  • Patent number: 9352620
    Abstract: A motorcycle tire for running on rough terrain has a block pattern that includes major groups arranged circumferentially of the tire at intervals, and minor groups arranged between the major groups. The major group consists of four blocks arranged axially of the tire and each connected to the next with a tie bar, wherein each is defined as having the centroid of its top surface within a tread center region having a developed width of 60% of a developed tread width, and angles (?1a) of straight lines drawn between axially adjacent centroids are not more than 10 degrees with respect to the tire axial direction. The minor group consists of two or three blocks connected with a tie bar, and angles of straight lines drawn between axially adjacent centroids of top surfaces of the blocks are 15 to 80 degrees with respect to the tire axial direction.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: May 31, 2016
    Assignee: SUMITOMO RUBBER INDUSTRIES, LTD.
    Inventor: Masahiro Hikita