Abstract: Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more.

Abstract: In an ink fountain key position adjusting method for a printing press, the temperature of a member of an inking device including an ink fountain roller and ink fountain keys is measured. The position of each ink fountain key with respect to the ink fountain roller is corrected in accordance with the measured member temperature. An ink fountain key position adjusting apparatus is also disclosed.

Abstract: [PROBLEMS] To provide a photopolymerization initiator having an extremely low possibility of contaminating liquid crystals, and a liquid crystal sealing material using such a photopolymerization initiator. [MEANS FOR SOLVING PROBLEMS] A liquid crystal sealing material comprising (a) a reactive photopolymerization initiator represented by the general formula (1) and (b) a photocurable resin: (wherein R1 represents a divalent straight chain, branched or cyclic lower alkylene group having 1 to 10 carbon atoms or an arylene group; R2 represents a divalent straight chain, branched or cyclic lower alkylene group having 1 to 10 carbon atoms or an arylene group; Ar represents an arylene group; R3 represents a hydrogen atom or a methyl group; X and Y respectively represent O or S; and Z is a hydroxyl group or a morpholino group).

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 1018/cm3, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 1018/cm3 is used in the channel layer 2.

Abstract: There is provided a C12A7 compound capable of selectively and reversibly clathrating X? ions, such as active oxygen radicals, with improved controllability. The C12A7 compound clathrating OH? ions and On? at a concentration of 2×1019 cm?3 or less can be prepared by subjecting a mixed material containing Ca and Al to a solid phase reaction at a firing temperature not lower than 1200° C. and lower than 1449° C. in a dry oxygen atmosphere having an oxygen partial pressure of 0.1 atm or more and a water vapor partial pressure of 10?3 atm or less, keeping the resultant product at a temperature of 1200° C. or higher, and cooling rapidly. The C12A7 compound is heat-treated to clathrate OH? ions at a concentration of 2×1019 cm?3 or less, and On? at a high concentration of more than 2×1019 cm?3. The compound can reversibly clathrate or release On? ion radicals through the elevation or lowering of the temperature thereof in a temperature range of 300 to 850° C.

Abstract: The present invention relates to a resin composition for protective films which comprises an epoxy resin having two or more epoxy groups, a curing agent, a curing accelerator, a solvent, and a colloidal slurry of fine silica particles having an average particle diameter, as determined by conversion from the specific surface area, of 50 nm or smaller, a pH of 6 to 8, and an alkali metal content of 5 ppm or lower. The resin composition gives a protective film which satisfies adhesiveness and visible-light transmission, which are performances conventionally required. The protective film further has high surface smoothness even when the substrate surface is not smoothed. The resin composition has satisfactory storage stability and does not stain liquid crystal. Furthermore, a cured film obtained from the resin composition has excellent high-temperature resistance, especially ITO resistance.

Abstract: In an ink supply amount adjustment method, a density value of a printed paper sheet is measured. The ink fountain key opening ratio is corrected on the basis of a difference between the measured density value of the printed paper sheet and a preset reference density value. The ink feed operation of the ink ductor roller is performed without printing after correction of the ink fountain key opening ratio to increase or decrease the amount of ink on the ink rollers.

Abstract: An objective of this application is to provide a sealant for liquid crystals witch is extremely less apt to contaminate liquid crystals and has high adhesion strength. This application discloses a sealant for liquid crystals comprising as essential ingredients (a) a radiation-curable resin represented by the general formula (1): wherein R1 represents a hydrogen atom or a methyl group, R2 represents a hydrogen atom, a halogen atom, a hydroxyl group, a linear, branch or cyclic monovalent alkyl group having 1 to 10 carbon atoms, or an alkoxy group having 1 to 10 carbon atoms, m represents an integer of 1 to 4, and may be the same or different, R3 represents a hydrogen atom or a methyl group, and the number n of the repeating units is a positive number in the range of 0 to 20; (b) a photopolymerization initiator; and (c) an inorganic filler having an average particle diameter of 3 ?m or less.

Abstract: To provide a method for preparing a mayenite type compound having electroconductivity imparted. A method for preparing an electroconductive mayenite type compound, which comprises melting a raw material containing Al and at least one element selected from the group consisting of Ca and Sr, holding the melt in a low oxygen partial pressure atmosphere having an oxygen partial pressure of not higher than 10 Pa, followed by cooling or annealing in a low oxygen partial pressure atmosphere or in atmospheric air for solidification, thereby to replace oxygen present in cages by electrons in a high concentration.

Abstract: The present invention relates to a sealant for liquid crystals having extremely low contamination nature to a liquid crystal, excellent coatability and bondability to a substrate, long service life and pot life and high adhesive strength. A sealant for liquid crystals of the present invention is characterized by comprising (a) an epoxy resin represented by general formula (1): (wherein a represents an integer of 2 to 4; n represents 0 to 3 (average value); R represents a divalent hydrocarbon group of 2 to 6 carbon atoms; A represents a polyvalent aromatic group; and G represents a glycidyl group, provided that when n is 0, (a) an epoxy resin represented by general formula (1) is a bisphenol S-type.), (b) a thermo-curing agent, (c) and a filler having average particle diameter of not larger than 3 ?m.

Abstract: A liquid crystal sealant comprising an epoxy resin represented by the following formula (1): [Formula 1] (in the formula, n denotes an average polymerization degree and is a positive number of 0–5) as a resin component, a curing agent, a curing accelerator and an inorganic filler is excellent in screen printability as a liquid crystal sealant in making a liquid crystal display device and can provide excellent reliability in moisture resistance for the liquid crystal display device obtained).

Abstract: In a solid solution system of Al2O3 and CAO or SrO, it has been difficult to obtain a material having a high electrical conductivity (>10?4 S·cm?) at room temperature. A compound is provided in which electrons at a high concentration are introduced into a 12CaO.7Al2O3 compound, a 12SrO.7Al2O3 compound, or a mixed crystal compound containing 12CaO.7Al2O3 and 12SrO.7Al2O3. The compound formed by substituting all the free oxygen ions with electrons is regarded as an electride compound in which [Ca24Al28O64]4+(4e?) or [Sr24Al28O64]4+(4e?) serves as a cation and electrons serve as anions. When a single crystal or a hydrostatic pressure press molded material of a fine powder thereof is held at approximately 700° C. in an alkaline metal vapor or an alkaline earth metal vapor, melt of a hydrostatic pressure press molded material of a powder is held at approximately 1,600° C. in a carbon crucible, followed by slow cooling for solidification, or a thin film of the compound held at approximately 600° C.

Abstract: A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen oxide reduction step downstream of the first combustion treatment step, in which a portion of the hydrogen sulfide-containing gas or the ammonia-containing gas is introduced and the nitrogen oxides produced in the first combustion treatment step are reduced in a reducing atmosphere; and a second combustion treatment step downstream of the nitrogen oxide reduction step, in which the remaining hydrogen sulfide-containing gas, together with air, is introduced and burned. The present invention provides a combustion apparatus suitable for use as a combustion furnace for off-gases resulting from the wet purification of coal gasification gas.

Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

Abstract: In an ink supply amount adjustment method, a standard ink fountain roller rotation amount preset before ink supply amount adjustment is compared with an ink fountain roller rotation amount after ink supply amount adjustment. A standard ink fountain key opening ratio preset before ink supply amount adjustment is compared with an ink fountain key opening ratio after ink supply amount adjustment. An ink fountain roller rotation amount correction amount is obtained on the basis of at least comparison result. An ink fountain key opening ratio correction amount common to all the ink fountain keys is obtained on the basis of at least the comparison result of the ink fountain key opening ratio. The ink fountain key opening ratio and the ink fountain roller rotation amount are adjusted in accordance with the obtained ink fountain key opening ratio correction amount and the obtained ink fountain roller rotation amount correction amount. An ink supply amount adjustment apparatus is also disclosed.

Abstract: In an ink supply amount control method for a printing press, the number of ink fountain keys whose gap amount with respect to an ink fountain roller falls within a predetermined range is counted. On the basis of the count value, the swing operation of an ink ductor roller which is arranged in an ink supply path and swings in synchronism with rotation of the printing press is controlled. Ink is supplied from the gap between the plurality of ink fountain keys and the ink fountain roller to the ink supply path in accordance with rotation of the ink fountain roller at the time of printing. The ink is supplied to a printing plate attached to a plate cylinder through the ink supply path by the swing operation of the ink ductor roller. An ink supply amount control apparatus and a printing press are also disclosed.

Abstract: A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen oxide reduction step downstream of the first combustion treatment step, in which a portion of the hydrogen sulfide-containing gas or the ammonia-containing gas is introduced and the nitrogen oxides produced in the first combustion treatment step are reduced in a reducing atmosphere; and a second combustion treatment step downstream of the nitrogen oxide reduction step, in which the remaining hydrogen sulfide-containing gas, together with air, is introduced and burned. The present invention provides a combustion apparatus suitable for use as a combustion furnace for off-gases resulting from the wet purification of coal gasification gas.

Abstract: Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (?) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 ?J/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner.

Abstract: The objective of the present invention is to develop a sealing material for liquid crystals which hardly contaminates liquid crystals, shows excellent coating workability and bonding property when applied to a substrate, and has a long working time (pot life), a low-temperature curing property and an excellent adhesion strength. The sealing material for liquid crystals is characterized by comprising: (A) as a curing resin a mixture of (a) an epoxy group-containing curing resin and (b) a (meth)acryloyl group-containing curing resin, or (c) a curing resin containing an epoxy group and a (meth)acryloyl group; (B) a radical-forming photopolymerization initiator; (C) an isophthalic acid dihydrazide having an average particle diameter of 3 ?m or smaller; and (D) a filler having an average particle diameter of 3 ?m or smaller.

Abstract: Disclosed is a 12CaO.7Al2O3 compound, a 12SrO.7Al2O3 compound, or a mixed crystal compound of 12CaO.7Al2O3 and 12SrO.7Al2O3, which contains a negative hydrogen ion (H?, H2?, H2? at a concentration of 1×1018 cm?3 or more. A negative hydrogen ion comprising a primary component of a hydride ion is incorporated into C12A7 (12CaO.7Al2O3), so that a function of being converted from an insulative material to an electrically conductive material in a sustained manner by means of irradiation with light can be exhibited even in the normal atmosphere at a room temperature. The present invention also provides a solid electrolyte capable of conducting a negative hydrogen ion, and means for releasing a hydride ion from the inside of a solid into a gaseous phase using an electric field.