Abstract: A method for producing a cadmium negative electrode for alkaline batteries according to the present invention comprises a step of obtaining a cadmium active-substance impregnated electrode plate by impregnating said electrode substrate with a cadmium active substance; and a step of adding polyethylene glycol for forming a polyethylene glycol coating on the surface of said cadmium negative electrode or on the surface of said active substance by coating or impregnating said active-substance impregnated electrode with polyethylene glycol.

Abstract: A semiconductor memory device includes an inner circuit. The inner circuit includes a command user interface, a logical circuit and a pad. Based upon an externally input fixing command, the command user interface outputs signals A and B with H or L level. Upon receipt of the signal A of H level and the signal B of L level, the logical circuit outputs a fixed logical signal of H level independent of the signal received from the pad, and upon receipt of the signal A of L level and the signal B of H level, outputs a fixed logical signal of L level independent of the signal received from the pad. Thus, it becomes possible to carry out a high-quality testing operation even when the number of the test pins of a test device is smaller than the number of address pins or data pins of a semiconductor memory device.

Abstract: A semiconductor memory device includes an inner circuit. The inner circuit includes a command user interface, a logical circuit and a pad. Based upon an externally input fixing command, the command user interface outputs signals A and B with H or L level. Upon receipt of the signal A of H level and the signal B of L level, the logical circuit outputs a fixed logical signal of H level independent of the signal received from the pad, and upon receipt of the signal A of L level and the signal B of H level, outputs a fixed logical signal of L level independent of the signal received from the pad. Thus, it becomes possible to carry out a high-quality testing operation even when the number of the test pins of a test device is smaller than the number of address pins or data pins of a semiconductor memory device.

Abstract: A rolling bearing unit comprising a rotatable race having an inner peripheral surface formed with an outer ring raceway and an outer peripheral surface formed with a rotating flange, a stationary race having an outer peripheral surface formed with an inner ring raceway, a plurality of rolling members between the outer ring raceway and the inner ring raceway, an annular encoder of multi-pole magnet supported in a concentric relation with the rotatable race to have characteristics alternately changed with a uniform interval in the circumferential direction and having an outer diameter larger than the outer diameter of the rotatable race, and a metal ring for supporting the encoder onto the rotatable race and having a cylindrical portion provided to enclose the encoder.

Abstract: A rolling bearing unit comprising a rotatable race having an inner peripheral surface formed with an outer ring raceway and an outer peripheral surface formed with a rotating flange, a stationary race having an outer peripheral surface formed with an inner ring raceway, a plurality of rolling members between the outer ring raceway and the inner ring raceway, an annular encoder of multi-pole magnet supported in a concentric relation with the rotatable race to have characteristics alternately changed with a uniform interval in the circumferential direction and having an outer diameter larger than the outer diameter of the rotatable race, and a metal ring for supporting the encoder onto the rotatable race and having a cylindrical portion provided to enclose the encoder.

Abstract: A rolling bearing unit comprising a rotatable race having an inner peripheral surface formed with an outer ring raceway and an outer peripheral surface formed with a rotating flange, a stationary race having an outer peripheral surface formed with an inner ring raceway, a plurality of rolling members between the outer ring raceway and the inner ring raceway, an annular encoder of multi-pole magnet supported in a concentric relation with the rotatable race to have characteristics alternately changed with a uniform interval in the circumferential direction and having an outer diameter larger than the outer diameter of the rotatable race, and a metal ring for supporting the encoder onto the rotatable race and having a cylindrical portion provided to enclose the encoder.

Abstract: A polyamide resin composition comprising a polyamide and an alkaline earth metal compound, wherein the amount of a cyclic monomer formed by melting said composition under the conditions of a moisture content of 0.02% by weight or less, at 0.01 Torr or below, at 250.degree. C., and for 8 hours is not more than 0.7 parts by weight per 100 parts by weight of the polyamide; and fibers, films and molded articles with the use of the same.

Abstract: On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purl fled, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

Abstract: A semiconductor laser device includes a substrate; a double hetero structure having an n-type cladding layer, an active layer, and a p-type cladding layer, which is formed on an upper face of the substrate; and electrodes formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch.

Abstract: A method for fabricating an AlGaInP semiconductor light emitting device having a substrate and a multilayer structure including an AlGaInP first semiconductor layer formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor layer is exposed, irradiating with plasma beams an oxide film formed on the exposed first semiconductor layer with the substrate temperature being kept at 500.degree. C. or less, so as to remove the oxide film from the first semiconductor layer and growing a second semiconductor layer on the first semiconductor layer.

Abstract: On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

Abstract: A semiconductor device comprising a (111)B single-crystalline semiconductor substrate which is misoriented toward (110), and epitaxial layers grown on the substrate by molecular beam epitaxy, whereby the crystallinity and luminescence efficiency of epitaxial layers are significantly improved.

Abstract: A semiconductor laser device is disclosed which comprises a semiconductor substrate and a multi-layered crystal structure disposed on the substrate, the multi-layered crystal structure containing a first cladding layer, a quantum-well active layer for laser oscillation, and a second cladding layer with a striped ridge portion for current injection, wherein the difference in the effective refractive index between the region underneath the striped ridge portion and the adjacent regions thereto is greater in the vicinity of at least one of the facets than inside of the facets.

Abstract: There is disclosed a semiconductor laser device with a strip-channeled substrate and a double-heterostructure multi-layered crystal disposed over the substrate, the multi-layered crystal containing an active layer for laser oscillation.

Abstract: A semiconductor laser device comprising a substrate; a current blocking layer disposed on the substrate; a striped channel formed in a manner to reach the substrate through the current blocking layer; a striped mesa disposed on the area of the V-channel, the striped mesa being of a multi-layered crystal that is composed of a first cladding layer, an active layer, a second cladding layer, and a protective layer in that order; and burying layers having at least one of the following two, a pn-reverse bias junction and a high resistant crystal, the burying layer being formed on both sides of the striped mesa, wherein the protective layer is made of Ga.sub.1-x Al.sub.x As (x>O).

Abstract: A photochromic compound represented by formula (I): ##STR1## wherein one of X.sub.1 and X.sub.2 represents a hydroxyl group, a sulfonic acid group or an alkali metal sulfonate base, and the other of X.sub.1 and X.sub.2 represents a hydrogen atom; X.sub.3 and X.sub.4 each represents a hydrogen atom, a lower alkyl group having from 1 to 3 carbon atoms, a lower alkoxy group having from 1 to 3 carbon atoms, a halogen atom, a nitro group or a cyano group; and R represents a straight chain alkyl group having from 1 to 30 carbon atoms. The compound exhibits excellent color developability.