Abstract: A sensor device according to the present technology includes a first chip including a first semiconductor substrate and a first wire formation layer and including a pixel that includes a photoelectric conversion element, and a first transfer gate element and a second transfer gate element configured to transfer accumulated charges of the photoelectric conversion element, and a second chip including a second semiconductor substrate and a second wire formation layer, in which a first wire electrically connected to the first transfer gate element, a second wire electrically connected to the second transfer gate element, and a third wire electrically connected to a ground are formed, and each of the first wire, the second wire, and the third wire is formed by bonding a first portion formed in the first wire formation layer and extending in a first direction and a second portion formed in the second wire formation layer and extending in the first direction.

Abstract: A crystal of a 1,3,5-triazine derivative or a solvate thereof, and a method for producing the same are provided. The present invention relates to a crystal of a compound represented by Formula (I) or a solvate thereof: and relates to a pharmaceutical composition containing the same. The present invention also relates to a crystal of a compound represented by Formula (I), or a solvate thereof.

Abstract: Provided is a rotary electric machine which achieves miniaturization and high power while preventing winding break of a coil. A rotary electric machine includes a stator which includes a stator core, a bobbin attached to the stator core, and a coil wound around a winding portion of the bobbin to generate a magnetomotive force, and a rotor provided on an inner peripheral side of the stator. The winding portion includes a regulation portion in an end surface in an axial direction of a rotation shaft of the rotary electric machine to regulate a position of the coil wound around the winding portion.

Abstract: According to one embodiment, the amplifier circuit includes a first and second differential amplifier. The first differential amplifier includes first and second transistors, a first current source, and a second current source that is configured to supply a current to the first and second transistors via a first switch element. The second differential amplifier includes third and fourth transistors, a third current source, and a fourth current source that is configured to supply a current to the third and fourth transistors via a second switch element. A first signal is input to the first and third transistors. The first switch elements are controlled by third and fourth signals, respectively. The third signal and the fourth signal are complementary.

Abstract: A semiconductor memory device includes a memory cell array, a temperature sensor that generates a first voltage which is based on a temperature of the semiconductor memory device, compares the first voltage with a second voltage that is based on a result of previous temperature measurement, and generates a voltage generation signal based on a result of comparing the first voltage with the second voltage, and a voltage generating circuit that generates a voltage applied to the memory cell array based on the voltage generation signal.

Abstract: Provided is a rotary electric machine in which lengths of routing portions of coil terminals are made uniform and a coil terminal portion is downsized. A rotary electric machine includes a rotor and a stator, the stator including teeth each wound with a coil, in which the coil consists of a first coil set and a second coil set, each of the first coil set and the second coil set is continuously wound around the two teeth, and includes a first coil terminal, and a second coil terminal to which a routing portion is formed, the first coil terminal of each of the first coil set and the second coil set is directly connected to the second coil terminal of another of the first coil set and the second coil set, the first coil terminal and the second coil terminal of each of the first coil set and the second coil set are arranged on an identical coil end, and the second coil terminal of each of the first coil set and the second coil set is arranged not to cross any other coil terminal in an axial direction.

Abstract: The purpose of the present invention is to provide a direct current motor wherein the number of coil-connecting wires that cross the outer surface of a coil end part is reduced. In a direct current motor that is provided with an armature that has a plurality of armature slots and has an armature coil that is wound so as to span two armature slots that are separated by a fixed number of armature slots, a lowermost layer of a coil end part is provided with at least four armature coils that are wound through other armature slots so as not to coincide with the wound armature coil, and a layer above the four armature coils that are wound on the bottommost layer is provided with at least four armature coils that are wound in the same manner as the four armature coils.

Abstract: The present invention provides a novel electric motor that allows improvement in the electrical insulation performance of the winding wire on the innermost peripheral side between adjacent teeth. A winding wire is wound in three layers around a tooth. The winding wire in a first winding layer is wound from a core back to a collar portion, and the winding wire in a second winding layer is wound from the collar portion to the core back. The start end of the winding wire in the first winding layer wound around a tooth is arranged on the core back side of the second winding layer. The terminal end and its vicinity of the winding wire in the first winding layer is arranged on the collar portion side of the first winding layer to leave a second winding layer start end arrangement space where the start end of the winding wire in the second winding layer is to be arranged.

Abstract: A semiconductor memory device includes a memory cell array, a temperature sensor that generates a first voltage which is based on a temperature of the semiconductor memory device, compares the first voltage with a second voltage that is based on a result of previous temperature measurement, and generates a voltage generation signal based on a result of comparing the first voltage with the second voltage, and a voltage generating circuit that generates a voltage applied to the memory cell array based on the voltage generation signal.

Abstract: According to one embodiment, the amplifier circuit includes a first and second differential amplifier. The first differential amplifier includes first and second transistors, a first current source, and a second current source that is configured to supply a current to the first and second transistors via a first switch element. The second differential amplifier includes third and fourth transistors, a third current source, and a fourth current source that is configured to supply a current to the third and fourth transistors via a second switch element. A first signal is input to the first and third transistors. The first switch elements are controlled by third and fourth signals, respectively. The third signal and the fourth signal are complementary.

Abstract: The purpose of the present invention is to provide a direct current motor wherein the number of coil-connecting wires that cross the outer surface of a coil end part is reduced. In a direct current motor that is provided with an armature that has a plurality of armature slots and has an armature coil that is wound so as to span two armature slots that are separated by a fixed number of armature slots, a lowermost layer of a coil end part is provided with at least four armature coils that are wound through other armature slots so as not to coincide with the wound armature coil, and a layer above the four armature coils that are wound on the bottommost layer is provided with at least four armature coils that are wound in the same manner as the four armature coils.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first memory cell and a controller. The controller controls a write operation. The write operation includes a first program to write data into the first memory cell, and a first verification to verify the first program. when a power voltage has become lower than a first voltage during the execution of the first verification for the first memory cell, the controller executes a second verification to verify the first program for the first memory cell.

Abstract: A rotor for an electric power steering motor is configured to include a rotor core having a step skew structure constituted of two independent cores as well as to use shrink fitting to fasten the two cores to a shaft. It may also be configured such that a magnetic center of the rotor core is adjusted by controlling a dimension thereof from a tip of the shaft and by shrink fitting the two cores.

Abstract: According to one embodiment, a polymer material includes two or more different repeating units each containing a quinoxaline backbone. At least one of the repeating units includes a halogen atom.

Abstract: A bias circuit according to an embodiment is a bias circuit that supplies a bias voltage to an amplifying element. The bias circuit of the embodiment includes a first current source that has a characteristic of varying an output current with the surrounding temperature variations, and a second current source that has a different output characteristic from the first current source and that can control the output current. The bias circuit of the embodiment also includes a comparator for comparing the output current of the first current source with the output current of the second current source, and a bias supply part that controls the output current of the second current source on the basis of the comparison result of the comparator and supplies a bias voltage to the amplifying element in accordance with the comparison result.

Abstract: A radio apparatus includes a first receiver that is a processing unit for amplifying and frequency converting a radio signal received via an antenna, thereby outputting an IF signal; a detector unit for detecting a preamble signal from the IF signal; a second receiver for amplifying and quadrature demodulating the radio signal, thereby generating an I-signal and a Q-signal; a demodulator unit for demodulating the I-signal and Q-signal to generate a data signal; and a control unit for halting the operation of the first receiver and further activating the second receiver when the detector unit detects the preamble signal and for activating the first receiver and halting the operation of the second receiver when the demodulator unit completes the demodulation of the I-signal and Q-signal.

Abstract: According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.

Abstract: According to one embodiment, there is provided an organic photovoltaic cell including substrate having a plurality of inclined surfaces and a plurality of solar cells formed on the inclined surfaces of the substrate. Each of the solar cells includes a pair of electrodes and a bulk heterojunction active layer interposed between the electrodes, the active layer containing a p-type organic semiconductor and an n-type organic semiconductor. An inclination of each of the inclined surfaces of the substrate against the horizontal plane is in the range of 60 to 89°, and the active layer exhibits a transmission of light within visible wavelength range of 3% or greater.

Abstract: According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.

Abstract: According to one embodiment, there is provided a method for manufacturing a photovoltaic cell. The method includes forming a structure including a pair of electrodes which are arranged apart from each other, and a hetero-junction type photoelectric conversion layer interposed between the electrodes and containing a p-type semiconductor and a n-type semiconductor, and annealing the photoelectric conversion layer thermally while applying an AC voltage having a frequency of 0.01 kHz or more and less than 1 kHz to control a mixed state of the p-type semiconductor and n-type semiconductor in the photoelectric conversion layer.