Abstract: A peripheral device for use with a data processing apparatus. The apparatus has a peripheral port with a set of terminal pins consisting of first to ninth pins disposed in a row. The first pin is assigned for one of a power source and the ground potential, the ninth pin for the other of the power source and the ground potential, the second, third, seventh and eighth pins for transmitting data signals, and the fourth to sixth for transmitting control signals. The apparatus has an element for selecting the communication mode of the peripheral device connected to the peripheral port, based on the data signals transmitted from the second, third, seventh and eighth pins.

Abstract: A peripheral device for use with a data processing apparatus. The apparatus has a peripheral port with a set of terminal pins consisting of first to ninth pins disposed in a row. The first pin is assigned for one of a power source and the ground potential, the ninth pin for the other of the power source and the ground potential, the second, third, seventh and eighth pins for transmitting data signals, and the fourth to sixth pins for transmitting control signals. The apparatus has an element for selecting the communication mode of the peripheral device connected to the peripheral port, based on the data signals transmitted from the second, third, seventh and eighth pins.

Abstract: A resin encapsulated semiconductor device comprises a semiconductor element, a conductive base, a wire of aluminum connecting the element and the base, and a thermosetting resin encapsulating hermetically the component to protect the device from a mechanical stress and ambient atmosphere.

Abstract: The present invention concerns a semiconductor device and a process for producing semiconductor device, as well as a wire bonding device used therefor.In accordance with the present invention, a ball formed at the top end of a bonding wire is sphericalized by electric discharge within a reducing gas atmosphere at a high temperature from 100.degree. C. to 200.degree. C. By using the ball of the bonding wire formed under such a condition to the bonding of the bonding pad of a semiconductor pellet, it is possible to conduct highly reliable ball bonding with excellent bondability and with no development of cracks or the like in the semiconductor pellet, as well as to obtain a highly reliable semiconductor device, that is, LSI or IC.

Abstract: This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.

Abstract: A corrosion-resistant aluminum electronic material comprising an alloy containing aluminum as the principal component and, in addition, a small amount of a noble metal, the content of said noble metal being equal to or less than that at the eutectic point having the primary crystal of aluminum. As the noble metal, there is contained at least one metal selected from Pt, Pd, Rh, Ir, Os, Ru, Au and Ag. Said electronic material is used for ball-bonding wire and distributing film in a semiconductor device, and the like.

Abstract: In the ignition apparatus for internal combustion engines, the internal combustion engine drives a generator and the generator charges a battery. The battery is connected to a boosting transformer which is connected with a semiconductor switch. The semiconductor switch causes a current to intermittently flow in the primary coil of the boosting transformer from the battery. An intermittence control circuit is connected between the semiconductor switch and the generator and controls the semiconductor switch to turn on and off a plurality of times per revolution of the generator in synchronism with the output of the generator. Thus, the semiconductor switch allows the transformer to generate a high voltage for ignition across the secondary coil. The intermittence control circuit includes an over-rotation preventing capacitor.