Abstract: A circuit breaker includes, a cylindrical portion having a gunpowder and a exploding unit for exploding the gunpowder by application of electric power to the gunpowder, the cylindrical portion being provided with an opening at at least one end; a base material securing the cylindrical portion, at least the surface of which is made of insulating material; a conductor fixed to the base material and having a break portion located at a position opposite to the opening of the cylindrical portion, the break portion being broken by explosive force of the gunpowder; a first metallic cover portion covering the cylindrical portion and the break portion; and a second metallic cover portion covering the base material from an opposite side to the cylindrical portion, wherein the first and second cover portions are fixed to the base material by directly connecting the first and second cover portions each other.

Abstract: First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH3, TMG, and hydrogen for carrier are supplied at the rates of 10 &mgr;mol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090° C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800° C., TMA, TMG, TMI, and NH3are supplied at the rates of 0.2 &mgr;mol/min., 2 &mgr;mol/min., 20 &mgr;mol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.

Abstract: The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.

Abstract: Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

Abstract: On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.

Abstract: An electric circuit breaker for interrupting an electric circuit of a vehicle includes a circuit break section having an explosive used for exploding a part of an electric circuit by explosion, a detonating device for exploding the explosive by application of electric power to the explosive, a collision detection device for detecting a collision of the vehicle and, a controller which explodes the explosive by supply of an electric current for detonating purposes to the detonating device in response to a detection signal from the collision detection device. The circuit breaker further includes a housing having a cylindrical member, such as an inner cylindrical portion, and a cover for covering the opening of the inner cylindrical portion. Connector terminals are formed on both ends of the conductor and a horizontal target section to be broken is formed in the middle of the conductor.

Abstract: A gallium nitride group compound semiconductor laser device of the present invention includes: a substrate; and a layered structure provided on the substrate, wherein the layered structure includes an In.sub.z Ga.sub.1-z N active layer (0.ltoreq.z.ltoreq.1) which is formed at least in a first region, an n-type Al.sub.x Ga.sub.1-x N cladding layer (0.ltoreq.x.ltoreq.1) and a p-type Al.sub.y Ga.sub.1-y N cladding layer (0.ltoreq.y.ltoreq.1) interposing the active layer therebetween, and a current-defining structure made of Al.sub.u Ga.sub.1-u N (0.ltoreq.u.ltoreq.1) having an opening corresponding to the first region for defining a current within the first region.

Abstract: A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.

Abstract: A circuit breaker having superior shock and vibration resistance is provided. The circuit breaker has a handle pivoted from an off position to an on position. The circuit is closed by bringing a movable contact point into contact with a fixed contact point via lever mechanisms. The circuit breaker has an electromagnetic coil which holds the movable iron piece in a non-attraction position away from an electromagnetic trip coil until power is applied to the electromagnetic trip coil. When the movable iron piece is attracted to the electromagnetic trip coil, the lever mechanisms are released from the constrained state, and the movable contact point is separated from the fixed contact point to thereby open the circuit, and the handle returns to the off position in conjunction with the lever mechanisms.

Abstract: On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer.

Abstract: A buffer layer composed of an n-type semiconductor layer, a cladding layer composed of an n-type semiconductor layer, and an active layer are formed sequentially on an n-type semiconductor substrate. On the active layer, there are formed a first optical guiding layer composed of a p-type semiconductor layer including a loss varying layer composed of a p-type semiconductor layer having a bandgap smaller than that of the active layer and a second optical guiding layer composed of a p-type semiconductor layer in this order. On the second optical guiding layer, there is formed a third optical guiding layer composed of a p-type semiconductor layer extending in a stripe. On both sides of the third optical guiding layer on the second optical guiding layer, there are formed current blocking layers which become transparent to a lasing light generated in the active layer composed of the n-type semiconductor layer.

Abstract: On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer.

Abstract: A method of manufacturing a rotation sensor can effectively prevent a sensor element from moving during a resin molding process for forming a resin portion that covers the sensor element to provide excellent waterproofness and airtightness. During a first resin injection step, an end of a bobbin of the sensor element is fixed or held in place by a slide core. Thereafter the slide core is extracted and resin is again injected in a second injection step into a vacated portion that is formed by extraction of the slide core. In the finished rotation sensor, the resin completely surrounds and encloses the bobbin, except at an exposed end of a magnetic pole piece. A metal mounting bracket is embedded in the resin at a spacing away from the bobbin. The bobbin has a positioning cavity to receive the slide core during the molding. The resin covering an upper part of the bobbin is at least four times as thick as the resin covering the coil of the sensor element.

Abstract: A semiconductor laser emits semiconductor laser light with TM-mode oscillation. The emitted semiconductor laser light is collimated by a first collimating lens, passes through a Brewster plate that is arranged so that the direction of Brewster plane's p-polarized light is in alignment with the direction of polarization of the emitted semiconductor laser light, and is coupled to an incident portion of a wavelength-conversion waveguide by means of a focusing lens. While being guided through the waveguide, the emitted semiconductor laser light is converted into second-harmonic light by means of a polarization inversion region. Semiconductor laser light emanating from an emitting portion of the waveguide reflects from an output mirror towards a diffraction grating, for modulation in wavelength. Second-harmonic light emanating from the emitting portion of the waveguide is outputted from the output mirror.

Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.

Abstract: A movement distance detector which is simple in structure, low-cost and highly accurate. The detector includes a magnet movable along a path, a magnetic body arranged along the path, and a magnetically sensitive element attached to one end of the magnetic body. When the magnet is moved along the path, a magnetic circuit is formed by the oppositely arranged magnet and magnetic body. The number of magnetic fluxes focused by the magnetic body changes with the movement distance of the magnet. The magnetically sensitive element detects the change in number of magnetic fluxes, that is, the movement distance. The magnetic body may be a rod, a truncated pyramid or a cylinder.

Abstract: A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.

Abstract: An acceleration detector includes a magnetic body movable under acceleration, and a differential transformer having primary coils and secondary coils and arranged so that an output differential is produced between the secondary coils when the movable magnetic body is displaced. The movable magnetic body extends through the primary coils and the secondary coils and has opposite ends protruding from the coils. Leaf springs are provided to support the protruding ends of the movable magnetic body. The case comprises a cylindrical body surrounding the outer periphery of the differential transformer and lids closing openings of the body at both ends thereof. Between the lids and both ends of the movable body predetermined gaps are provided through which a magnetic flux can flow. The leaf springs are secured in position between end faces of the body and the lids.

Abstract: In a semiconductor laser device, a Ga.sub.1-y Al.sub.y As cladding layer of a conduction type is provided on at least one principal plane of an active layer, while a Ga.sub.1-Z Al.sub.Z As current blocking layer of the other conduction type is provided on the cladding layer and has a stripe-like window. The AlAs mode fractions Y and Z has a relation, Z>Y. The semiconductor laser device has low noises and a low operating current value.

Abstract: An acceleration detector has a case and a movable magnetic body mounted in the case and supported by a leaf spring secured to the case. The magnetic body is thus movable in either of two opposite directions in response to acceleration. Stoppers made of a magnetic material protrude from an inner surface of the case to locations adjacent both ends of the magenetic body, with predetermined gaps left therebetween. Two pairs of primary and secondary coils are provided around the magnetic body for producing a difference in induced voltages output by the secondary coils according to the displacement of the magnetic body. A yoke made of soft magnetic material extends from the case to location adjacent the magnetic body.