Abstract: A semiconductive laser device having a resonator which is formed with a dielectric film on at least one end face thereof is described. The dielectric film is in a thickness of at least three times a wavelength in the dielectric film by which the oscillation wavelength becomes very stable.

Abstract: A hermetically sealed magnetic sensor for detecting variations in a magnetic field has a sensor element with an output terminal for detecting variations in the magnetic field and generating a signal. An output wire is connected with one end to the terminal for outputting a respective signal from the sensor element. A case having an opening on a side close to the output wire contains the sensor element. A first thermosetting resin fills the case for covering the sensor element. A second thermoplastic resin hermetically seals the opening in the case.

Abstract: An electromagnetic power generating type rotation sensor has a magnetic pole which is divided into an inner magnetic pole piece and an outer magnetic pole piece (3a, 13a) located in a position close to an outer peripheral part or a side part of a magnetic rotator. The inner magnetic pole piece (3b, 13b) is located adjacent to the outer magnetic pole piece but inside the sensor so as not to be exposed to the external environment.

Abstract: A BTRS (buried Twin-Ridge Substrate) structure laser, wherein an oblong protrusion (10) is provided on a substrate (1) of a first conductivity type and two ridges (9, 9) divided by a groove (31) therebetween are provided on a second layer (2) of a second conductivity type, and thereon plural layers (3, 4, 5, 6) including an active layer (4) are provided is improved to have longer service life such that: the protrusion (10) is shortened so as to have its both ends apart inside cavity facet of the substrate (1), or further by width of each ridge (9, 9) is narrowed at both ends thereof thereby forming narrowed end parts (9', 9'), so that excessive current injection to the active layer near the cavity facet is eliminated.

Abstract: In a TRS (twin ridge substrate) type semiconductor laser, reflectivity at both facets of the resonator at the oscillation wavelength is selected to be higher than the reflectivity of the semiconductor crystal of the laser device, but smaller than 1, thereby stabilizing the light oscillation with a low S/N ratio.

Abstract: This invention relates to an electrical contact material of silver-indium oxide type, which is produced by the internal oxidation of an alloy consisting of 6-15% by weight indium, at least one of 0.2-8% by weight tin and 0.01-1% by weight magnesium and the balance silver. This alloy may contain further 0.01-1% by weight of nickel.

Abstract: A material for an electrical contact is produced by an internal oxidation of an alloy consisting of 1-15% by weight of indium, 0.5-12% by weight of tin, 0.01-5% by weight of one selected from manganese and molybdenum, and the balance silver. In a modification an iron group element may be mixed in a range less than 0.5% by weight.