Abstract: There is provided a semiconductor device including a first emitter layer of a first conductivity type, a drift layer of a second conductivity type, adjacent to the first emitter layer, a channel layer of the first conductivity type, adjacent to the drift layer, a second emitter layer of the second conductivity type, adjacent to the channel layer, a collector electrode electrically coupled to the first emitter layer, an emitter electrode electrically coupled to the second emitter layer, a first trench-gate electrode for controlling on and off of an electric current flowing between the collector electrode and the emitter electrode, and a second trench-gate electrode for controlling a turn-off power loss. The semiconductor device further includes a thyristor unit made up of the first emitter layer, the drift layer, the channel layer, and the second emitter layer.

Abstract: A semiconductor device (10) includes an n-type drift layer (11) that is a semiconductor substrate; a p-type region (12) and an n-type region (13) that are formed on a surface of the semiconductor substrate and serving as anode regions; a high-concentration n-type region (15) formed on a back surface of the semiconductor substrate and serving as a cathode region; and an anode electrode (1). The semiconductor substrate includes, on its surface, a structure in which the p-type region (12) and the n-type region (13) are adjacent to each other, wherein the p-type region (12) is connected to the anode electrode (1), and the n-type region (13) is connected to the anode electrode (1) via a switch (14). A control unit (40) is connected to a control terminal of the switch (14). In a conduction state of the semiconductor device (10), the control unit (40) outputs a high-frequency pulse to the control terminal of the switch (14) to turn on and off the switch (14).

Abstract: A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided. In the control device controlling driving of a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided, a signal of tuning ON or OFF is outputted to a gate electrode in a state of outputting a signal of turning OFF to the second gate electrode.

Abstract: A trench-gate vertical-channel type power MOSFET has an advantage of a low on-state resistance. With increasing miniaturization, fluctuations in on-state resistance have posed a problem. In addition, a structural limitation in miniaturization also has posed a problem. These problems are not only those of a single power MOSFET but also are important ones in integrated circuit devices, such as IGBT using a similar structure, obtained by integrating CMOS and such a power active device on a single chip. The invention provides a semiconductor device having a trench-gate vertical-channel type power active device, such as trench-gate vertical-channel type power MOSFET, in which the width of the interlayer insulating film is made almost equal to that of the trench and a portion of the source region is comprised of a polysilicon member.

Abstract: A control device of a semiconductor device is provided. The control device of a semiconductor device is capable of reducing both ON resistance and feedback capacitance in a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided. In the control device controlling driving of a hollow-gate type planar MOSFET to which a second gate electrode is provided or a trench MOSFET to which a second gate electrode is provided, a signal of tuning ON or OFF is outputted to a gate electrode in a state of outputting a signal of turning OFF to the second gate electrode.

Abstract: Technology of reducing leakage current in a planar MOSFET and a hollow gate type planar MOSFET is provided. In a planar MOSFET (and hollow gate type planar MOSFET), regions close to a channel in n-type source regions have a shallow depth (shallow n-type source region), and regions away from the channel have a large depth (deep n-type source region). Protruding portions in a horizontal direction of p-type well regions are positioned further inside than a surface of a substrate. In this manner, a planar MOSFET (and a hollow gate type planar MOSFET) having small leakage current can be achieved, and thus there is an effect in loss reduction in a power source using the planar MOSFET (and the hollow gate type planar MOSFET).

Abstract: In a power supply unit, a main MOS and a sub MOS connected in parallel in a low-side power MOSFET section, a sensing MOS which is provided on a same semiconductor substrate with the low-side power MOSFET section, detects information corresponding to a load of the low-side power MOSFET section and is smaller in number than the transistors connected in parallel of the low-side power MOSFET section, and a control section for driving the main MOS and the sub MOS based on the information detected by the sensing MOS are provided.