Abstract: A semiconductor light-emitting device includes a stacked body, a cutout section, and a high-resistance region. The stacked body includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order and has paired side faces opposed to each other. The cutout section is provided on at least one of the paired side faces of the stacked body and has a bottom face where the first conductive-type semiconductor layer is exposed. The high-resistance region is provided from the vicinity of the bottom face of the cutout section to the side face of the stacked body and has electric resistance higher than the electric resistance of the stacked body in a periphery of the high-resistance region.

Abstract: A measuring device 1 according to the present disclosure measures a state of a solution L. The measuring device 1 includes a measuring unit 10 that outputs a measurement signal associated with the state of the solution L, a protection unit 20 attached to the measuring unit 10, and a controller 40 that obtains the information on the state of the solution L on the basis of a measurement signal output from the measuring unit 10. The measuring unit 10 has a first part P1 in a usable state that contributes to output of the measurement signal by coming into contact with the solution L, and a second part that is isolated from the solution L by the protection unit 20 and is in a standby state for measurement.

Abstract: To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.

Abstract: A method for producing an electrode for a non-aqueous secondary battery is provided, the method includes: mixing a compound containing lithium, a compound containing nickel, and barium titanate to obtain a mixture; heat-treating the mixture to obtain a first composition containing a lithium-transition metal composite oxide; preparing an electrode composition containing the first composition, a conductive aid, and a binder; and applying and compressing the electrode composition on a current collector to form an active material layer with a density of from 2.4 g/cm3 to 3.6 g/cm3 on the current collector.

Abstract: [Object] To provide a semiconductor laser element capable of preventing current leakage in junction-down mounting and a method of producing the semiconductor laser element. [Solving Means] A semiconductor laser element according to the present technology includes: a stacked body. The stacked body includes a substrate, an n-type semiconductor layer that is formed on the substrate, is formed of an n-type semiconductor material, and has a core that is a defect concentration region, an active layer that is formed on the n-type semiconductor layer, and a p-type semiconductor layer that is formed on the active layer and is formed of a p-type semiconductor material, and has a recessed portion formed from a surface of the p-type semiconductor layer to have a depth reaching the core and an ion implantation region that is formed by implanting ions into a region including the core.

Abstract: A method of producing a positive electrode for a non-aqueous electrolyte secondary battery, includes: providing a lithium transition metal composite oxide having a layered structure, having a ratio D50/DSEM of 1 or more and 4 or less, and having a certain content of nickel and a certain content of cobalt; bringing the lithium transition metal composite oxide into contact with a cobalt compound to obtain an adhered material; heat-treating the adhered material at a temperature higher than 700° C. and lower than 1100° C. to obtain a heat-treated product; obtaining a positive electrode composition containing the heat-treated product, a conductive auxiliary agent, and a binder; and applying and pressurizing the positive electrode composition onto a collector to form an active material layer having a density of 2.7 g/cm3 or more and 3.9 g/cm3 or less on the collector.

Abstract: There is provided a light-emitting device (1) including: a light-emitting element (20); a light-transmissive heat dissipation member (11) having a plate shape; a wavelength conversion member (12) that takes in, from a side of a light scattering layer (12a), light that is emitted from the light-emitting element (20) and passes through the light-transmissive heat dissipation member (11), and converts a wavelength in a fluorescent layer (12b); a lateral heat dissipation member that has a plate shape, includes a high-heat conduction member (13) in contact with a side surface of the wavelength conversion member (12) via a light reflection member (14), and is in contact with an upper surface of the light-transmissive heat dissipation member (11); and a package (21) that houses the light-emitting element (20) and supports a wavelength conversion unit (100) including the light-transmissive heat dissipation member (11), the wavelength conversion member (12), and the lateral heat dissipation member.

Abstract: Provided is a positive electrode for an all-solid-state lithium ion secondary battery which can reduce the internal resistance of the all-solid-state lithium ion secondary battery. The positive electrode includes an active material layer containing a positive electrode active material and a solid electrolyte material. The positive electrode active material contains secondary particles comprising an aggregate of a plurality of primary particles containing a lithium transition metal composite oxide. A smoothness of the secondary particles is more than 0.73, and a degree of circularity of the secondary particles is more than 0.83.

Abstract: The positive electrode active material includes secondary particles formed by aggregation of a plurality of primary particles that contain a lithium transition metal composite oxide having a layered structure and containing lithium and nickel. The secondary particles have a smoothness greater than 0.73, and a circularity greater than 0.83. The secondary particles contain cobalt and have a first region at a depth of 150 nm from a surface of the respective secondary particle and a second region at a depth of 10 nm or less from the surface of the respective secondary particle, and a ratio of a number of moles of cobalt to a total number of moles of metal elements other than lithium in the second region is larger than a ratio of a number of moles of cobalt to a total number of moles of metal elements other than lithium in the first region.

Abstract: There is provided a semiconductor light emitting device that allows the internal resistance to be improved. A semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first housing member and a second housing member at least one of which has a wiring structure; and an electrically conductive bonding section. The first housing member and the second housing member house the light emitting element. The wiring structure electrically couples the light emitting element and an outside. The electrically conductive bonding section bonds the first housing member and the second housing member. The electrically conductive bonding section is electrically coupled to the wiring structure.

Abstract: To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.

Abstract: A semiconductor device according to the present technology includes a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is 0.99-1.0 times a first width, a third width is 0.96-1.0 times the second width, and the transparent conductive layer has a uniform thickness within a range of 90% to 110% in a range of the third width, the first width being a width in a direction perpendicular to an extending direction of the ridge, the second width being a width in the direction on a surface of the transparent conductive layer on a side of the ridge, the third width being a width in the direction on a surface opposite to the ridge of the transparent conductive layer.

Abstract: A light-emitting device including: a package including a light-emitting element, a reflection member that reflects light outputted from the light-emitting element, and a sealed space that accommodates the light-emitting element and the reflection member; a base plate on which a plurality of the packages is mounted; and lenses opposed to the base plate with the plurality of packages interposed therebetween, the lenses being opposed to the respective packages.

Abstract: A semiconductor light-emitting device includes a stacked body, a cutout section, and a high-resistance region. The stacked body includes a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer in this order and has paired side faces opposed to each other. The cutout section is provided on at least one of the paired side faces of the stacked body and has a bottom face where the first conductive-type semiconductor layer is exposed. The high-resistance region is provided from the vicinity of the bottom face of the cutout section to the side face of the stacked body and has electric resistance higher than the electric resistance of the stacked body in a periphery of the high-resistance region.

Abstract: A method for producing an electrode for a non-aqueous secondary battery is provided, the method includes: mixing a compound containing lithium, a compound containing nickel, and barium titanate to obtain a mixture; heat-treating the mixture to obtain a first composition containing a lithium-transition metal composite oxide; preparing an electrode composition containing the first composition, a conductive aid, and a binder; and applying and compressing the electrode composition on a current collector to form an active material layer with a density of from 2.4 g/cm3 to 3.6 g/cm3 on the current collector.

Abstract: A light emitting apparatus according to an embodiment of the present technology includes a base portion, a light emitting element, and a cover portion. The base portion includes a support surface. The light emitting element is disposed on the support surface of the base portion. The cover portion includes a light transmission portion through which light emitted from the light emitting element is transmitted and a protrusion portion which is provided on at least a part of a periphery of the light transmission portion and protruded relative to the light transmission portion, the cover portion being provided on the support surface in such a manner as to cover the light emitting element.

Abstract: A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.

Abstract: The present invention provides a positive-electrode active material for non-aqueous secondary battery comprising a sodium transition metal composite oxide represented by Formula: NaxFe1-yMyO2, wherein 0.4?x?0.7, 0.25?y<1.0, and M is at least one element selected from the group consisting of manganese, cobalt and nickel, the sodium transition metal composite oxide having a crystal structure substantially composed of P63/mmc alone.

Abstract: [Object] To provide a semiconductor device, a semiconductor laser, and a method of producing a semiconductor device that are capable of sufficiently ensuring electrical connection between a transparent conductive layer and a semiconductor layer. [Solving Means] A semiconductor device according to the present technology includes: a first semiconductor layer; a second semiconductor layer; an active layer; and a transparent conductive layer. The first semiconductor layer has a first conductivity type, a stripe-shaped ridge being formed on a surface of the first semiconductor layer. A second width is not less than 0.99 and not more than 1.0 times a first width, a third width is not less than 0.96 and not more than 1.

Abstract: A light emitting apparatus according to an embodiment of the present technology includes a base portion, a light emitting element, and a cover portion. The base portion includes a support surface. The light emitting element is disposed on the support surface of the base portion. The cover portion includes a light transmission portion through which light emitted from the light emitting element is transmitted and a protrusion portion which is provided on at least a part of a periphery of the light transmission portion and protruded relative to the light transmission portion, the cover portion being provided on the support surface in such a manner as to cover the light emitting element.