Patents by Inventor Masahiro Nagasu
Masahiro Nagasu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8963456Abstract: A power converter includes a first electric power conversion unit having an inverter for converting a first DC electric power to an AC electric power, an AC circuit connected to the first electric power conversion means; a second electric power conversion unit for receiving the first DC electric power and converting the same to a second DC electric power having a voltage level that differs from the voltage level of the first DC electric power, a power storage unit for storing the second DC electric power of the second electric power conversion unit; and a ripple suppressor having a first inductance for guiding the second DC electric power of the second electric power conversion unit to the power storage means and a second inductance for suppressing the ripple component included in the second DC electric power arranged between the second electric power conversion unit and the power storage unit.Type: GrantFiled: February 9, 2012Date of Patent: February 24, 2015Assignee: Hitachi, Ltd.Inventors: Tetsu Sugiura, Masahiro Nagasu, Motomi Shimada, Ryoichi Oishi, Tadanori Sato, Toshio Sekine
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Patent number: 8924051Abstract: A control device for a railway vehicle controls an inverter device based on a direct-current link voltage Vfc between the opposite terminals of a filter capacitor. A direct-current voltage applied to the inverter device during regeneration is the sum of a voltage Vb of power storage equipment and an overhead wire voltage Vs, so that only detecting the direct-current link voltage Vfc is not enough to separate the voltage Vb of the power storage equipment and the overhead wire voltage Vs from each other. The power storage equipment can be connected in series with the inverter device, and a voltage sensor that detects the overhead wire voltage Vs is provided between a current collector device and a grounding point. The power storage equipment is controlled based on the detection result from the voltage sensor.Type: GrantFiled: May 31, 2011Date of Patent: December 30, 2014Assignee: Hitachi, Ltd.Inventors: Daijiro Araki, Motomi Shimada, Shuichi Tachihara, Akira Horie, Masahiro Nagasu
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Patent number: 8471622Abstract: The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.Type: GrantFiled: April 15, 2010Date of Patent: June 25, 2013Assignee: Hitachi, Ltd.Inventors: Katsumi Ishikawa, Kazutoshi Ogawa, Masahiro Nagasu
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Publication number: 20130073125Abstract: A control device for a railway vehicle controls an inverter device based on a direct-current link voltage Vfc between the opposite terminals of a filter capacitor. A direct-current voltage applied to the inverter device during regeneration is the sum of a voltage Vb of power storage equipment and an overhead wire voltage Vs, so that only detecting the direct-current link voltage Vfc is not enough to separate the voltage Vb of the power storage equipment and the overhead wire voltage Vs from each other. The power storage equipment can be connected in series with the inverter device, and a voltage sensor that detects the overhead wire voltage Vs is provided between a current collector device and a grounding point. The power storage equipment is controlled based on the detection result from the voltage sensor.Type: ApplicationFiled: May 31, 2011Publication date: March 21, 2013Inventors: Daijiro Araki, Motomi Shimada, Shuichi Tachihara, Akira Horie, Masahiro Nagasu
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Publication number: 20120229055Abstract: A power converter includes a first electric power conversion unit having an inverter for converting a first DC electric power to an AC electric power, an AC circuit connected to the first electric power conversion means; a second electric power conversion unit for receiving the first DC electric power and converting the same to a second DC electric power having a voltage level that differs from the voltage level of the first DC electric power, a power storage unit for storing the second DC electric power of the second electric power conversion unit; and a ripple suppressor having a first inductance for guiding the second DC electric power of the second electric power conversion unit to the power storage means and a second inductance for suppressing the ripple component included in the second DC electric power arranged between the second electric power conversion unit and the power storage unit.Type: ApplicationFiled: February 9, 2012Publication date: September 13, 2012Inventors: Tetsu SUGIURA, Masahiro Nagasu, Motomi Shimada, Ryoichi Oishi, Tadanori Sato, Toshio Sekine
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Patent number: 7994826Abstract: A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.Type: GrantFiled: January 19, 2007Date of Patent: August 9, 2011Assignee: Hitachi, Ltd.Inventors: Katsumi Ishikawa, Hideki Miyazaki, Masahiro Nagasu, Yasuhiko Kono
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Patent number: 7965056Abstract: The invention provides a control apparatus of a power conversion system for driving an induction motor via a VVVF inverter, wherein the AC voltage generated by the inverter is increased so as to expand the high-speed side property of the induction motor, to thereby improve the performance during power running and regenerative braking. In the present system, a DC power supply source having a power storage system with a capacity capable of processing the current flowing into or out of the inverter is inserted in series to the ground side of the input of the inverter, and the output voltage thereof is controlled from zero in a continuous manner to be added to the trolley voltage, which is then applied to the inverter.Type: GrantFiled: April 24, 2008Date of Patent: June 21, 2011Assignee: Hitachi, Ltd.Inventors: Mutsuhiro Terunuma, Eiichi Toyota, Motomi Shimada, Masahiro Nagasu
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Patent number: 7880174Abstract: An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.Type: GrantFiled: February 12, 2008Date of Patent: February 1, 2011Assignee: Hitachi, Ltd.Inventors: Haruka Shimizu, Katsumi Ishikawa, Masahiro Nagasu, Dai Tsugawa
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Publication number: 20100265746Abstract: The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.Type: ApplicationFiled: April 15, 2010Publication date: October 21, 2010Inventors: Katsumi ISHIKAWA, Kazutoshi OGAWA, Masahiro NAGASU
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Patent number: 7783396Abstract: In a conventional hybrid scheme used to mount a rechargeable battery in a motor vehicle, store into the battery the electric power that has been obtained via a regenerative brake, and utilize the power during acceleration of the vehicle, when a temperature rise of the battery due to charging or discharging causes a temperature of the battery to stay outside a defined range, it has been absolutely necessary to stop the battery charge or discharge, and fuel efficiency has decreased. This invention predicts a charge level and temperature of a rechargeable battery from the cruising input/output power requirements calculated from route information and historical records of cruising, prevents a stoppage of the battery by calculating chronological engine output and brake control data for the temperature to stay within a defined range, and hence improves fuel efficiency.Type: GrantFiled: January 16, 2008Date of Patent: August 24, 2010Assignee: Hitachi, Ltd.Inventors: Hiroshi Arita, Katsumi Ishikawa, Sunao Funakoshi, Masahiro Nagasu
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Patent number: 7737761Abstract: A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel. A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.Type: GrantFiled: January 24, 2008Date of Patent: June 15, 2010Assignee: Hitachi, Ltd.Inventors: Katsumi Ishikawa, Masahiro Nagasu, Dai Tsugawa
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Patent number: 7577668Abstract: A high reliability information transmission system which can continue transmission upon at the occurrence of multiple failures. The system includes two transmission lines and transmission terminals coupled to both of the transmission lines. Data can be transmitted between respective terminals using both transmission lines. The transmission terminals check the data reception status at the corresponding receiving terminals. When data is not being received, the data may be relayed to the receiving terminal using one of the other transmission lines.Type: GrantFiled: November 19, 2003Date of Patent: August 18, 2009Assignees: Hitachi, Ltd., Hitachi Information & Control Systems, Inc.Inventors: Yutaka Sato, Masahiro Nagasu, Shigenobu Yanai, Keiji Ishida, Toshiyuki Murakami
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Patent number: 7570085Abstract: A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.Type: GrantFiled: January 19, 2007Date of Patent: August 4, 2009Assignee: Hitachi, Ltd.Inventors: Katsumi Ishikawa, Yutaka Sato, Masahiro Nagasu, Seiji Ishida
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Publication number: 20090168471Abstract: A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R2>4L/C, with impedance R (resistance), L (inductance), and C (capacitance) determined by a closed circuit between a power source and a positive or negative terminal when the current of the diode becomes zero during recovery operation, is satisfied.Type: ApplicationFiled: December 23, 2008Publication date: July 2, 2009Inventors: Dai Tsugawa, Katsumi Ishikawa, Masahiro Nagasu, Haruka Shimizu
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Publication number: 20080266920Abstract: The invention provides a control apparatus of a power conversion system for driving an induction motor via a VVVF inverter, wherein the AC voltage generated by the inverter is increased so as to expand the high-speed side property of the induction motor, to thereby improve the performance during power running and regenerative braking. In the present system, a DC power supply source having a power storage system with a capacity capable of processing the current flowing into or out of the inverter is inserted in series to the ground side of the input of the inverter, and the output voltage thereof is controlled from zero in a continuous manner to be added to the trolley voltage, which is then applied to the inverter.Type: ApplicationFiled: April 24, 2008Publication date: October 30, 2008Inventors: Mutsuhiro Terunuma, Eiichi Toyota, Motomi Shimada, Masahiro Nagasu
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Publication number: 20080258252Abstract: An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.Type: ApplicationFiled: February 12, 2008Publication date: October 23, 2008Inventors: Haruka Shimizu, Katsumi Ishikawa, Masahiro Nagasu, Dai Tsugawa
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Publication number: 20080183348Abstract: In a conventional hybrid scheme used to mount a rechargeable battery in a motor vehicle, store into the battery the electric power that has been obtained via a regenerative brake, and utilize the power during acceleration of the vehicle, when a temperature rise of the battery due to charging or discharging causes a temperature of the battery to stay outside a defined range, it has been absolutely necessary to stop the battery charge or discharge, and fuel efficiency has decreased. This invention predicts a charge level and temperature of a rechargeable battery from the cruising input/output power requirements calculated from route information and historical records of cruising, prevents a stoppage of the battery by calculating chronological engine output and brake control data for the temperature to stay within a defined range, and hence improves fuel efficiency.Type: ApplicationFiled: January 16, 2008Publication date: July 31, 2008Applicant: Hitachi, Ltd.Inventors: Hiroshi ARITA, Katsumi ISHIKAWA, Sunao FUNAKOSHI, Masahiro NAGASU
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Publication number: 20080122497Abstract: A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel. A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.Type: ApplicationFiled: January 24, 2008Publication date: May 29, 2008Applicant: Hitachi, Ltd.Inventors: Katsumi ISHIKAWA, Masahiro Nagasu, Dai Tsugawa
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Publication number: 20070200613Abstract: A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.Type: ApplicationFiled: January 19, 2007Publication date: August 30, 2007Inventors: Katsumi Ishikawa, Yutaka Sato, Masahiro Nagasu, Seiji Ishida
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Publication number: 20070200602Abstract: A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.Type: ApplicationFiled: January 19, 2007Publication date: August 30, 2007Inventors: Katsumi Ishikawa, Hideki Miyazaki, Masahiro Nagasu, Yasuhiko Kono