Abstract: A hysteresis torque generating mechanism includes a first rotor having a slide surface, and a second rotor opposed to the first rotor. The second rotor is configured to slide against the slide surface of the first rotor so as to generate a hysteresis torque. The second rotor includes an initial contact portion and a main friction surface. The initial contact portion is provided to protrude toward the first rotor. The initial contact portion is configured to slide in contact with the slide surface of the first rotor. The main friction surface is configured to slide in contact with the slide surface of the first rotor after abrasion of the initial contact portion.

Abstract: A control device includes a controller that executes determining a connection between a first unit that has a boarding space which allows a user to board and is provided with a predetermined facility and that is provided with a first path through which a fluid used in the predetermined facility passes and a second unit that is configured to be separated from and connected to the first unit and that has a drive device of a vehicle that is formed by being connected to the first unit, and supplying the fluid in the first path to a second unit side to absorb heat generated from the drive device.

Abstract: A friction generating mechanism of a damper apparatus includes a bushing in contact with an annular friction surface of a spline hub, and a cone spring arranged in a compressed state between a retaining plate and the bushing. A first load support surface of the bushing and a second load support surface of the retaining plate have step portions recessed so as to respectively receive an outer peripheral edge and an inner peripheral edge of the cone spring, when the taper of the cone spring is reversed. The radial positions of boundaries of the step portions are in a relationship of D1>D2, which inhibits the cone spring from being reversed even when an excessive load in the axial direction is input.

Abstract: A hysteresis torque generating mechanism includes a first rotor having a slide surface, and a second rotor opposed to the first rotor. The second rotor is configured to slide against the slide surface of the first rotor so as to generate a hysteresis torque. The second rotor includes an initial contact portion and a main friction surface. The initial contact portion is provided to protrude toward the first rotor. The initial contact portion is configured to slide in contact with the slide surface of the first rotor. The main friction surface is configured to slide in contact with the slide surface of the first rotor after abrasion of the initial contact portion.

Abstract: A scroll compressor includes a shell, a fixed scroll and an orbiting scroll disposed in the shell, a first scroll wrap and a second scroll wrap that are provided in the fixed scroll and the orbiting scroll, respectively, and that are engaged with each other to form a plurality of compression chambers, a crankshaft that causes the orbiting scroll to perform eccentric revolving motion, a tip seal member that is inserted in the tip of the second scroll wrap along the spiral direction and that is in sliding contact with the first baseplate of the fixed scroll, and injection ports that are provided through the first baseplate of the fixed scroll and that introduce refrigerant at an intermediate pressure between suction pressure and discharge pressure into the compression chambers from the outside of the shell.

Abstract: A spring assembly includes a first coil spring and a second coil spring. The second coil spring includes a first winding portion and a second winding portion. The first winding portion includes a plurality of windings from a first winding to at least a second winding. The second winding portion is a portion except for the first winding portion. An outer diameter of each of the plurality of windings of the first winding portion is smaller than an outer diameter of each of at least one winding of the second winding portion. Each of the plurality of windings of the first winding portion includes the substantially same outer diameter.

Abstract: A scroll compressor includes a shell, a fixed scroll and an orbiting scroll disposed in the shell, a first scroll wrap and a second scroll wrap that are provided in the fixed scroll and the orbiting scroll, respectively, and that are engaged with each other to form a plurality of compression chambers, a crankshaft that causes the orbiting scroll to perform eccentric revolving motion, a tip seal member that is inserted in the tip of the second scroll wrap along the spiral direction and that is in sliding contact with the first baseplate of the fixed scroll, and injection ports that are provided through the first baseplate of the fixed scroll and that introduce refrigerant at an intermediate pressure between suction pressure and discharge pressure into the compression chambers from the outside of the shell.

Abstract: A vehicle component positioning structure positions a second component for a vehicle on a first component for the vehicle. The vehicle component positioning structure includes a first hole portion provided in the first component; and a pin member fitted into the first hole portion and protruding from the first hole portion in order to support the second component. A gap is provided between a portion of an inner peripheral surface of the first hole portion and a portion of an outer peripheral surface of the pin member, the portion of an outer peripheral surface of the pin member opposing the portion of the inner peripheral surface of the first hole portion.

Abstract: A spring assembly includes a first coil spring and a second coil spring. The second coil spring includes a first winding portion and a second winding portion. The first winding portion includes a plurality of windings from a first winding to at least a second winding. The second winding portion is a portion except for the first winding portion. An outer diameter of each of the plurality of windings of the first winding portion is smaller than an outer diameter of each of at least one winding of the second winding portion. Each of the plurality of windings of the first winding portion includes the substantially same outer diameter.

Abstract: A method for molding an end of a long resin molded article that is obtained by extrusion molding and has a design surface and an attachment surface extended in a longitudinal direction of the long resin molded article, and the attachment surface is attached to other parts. An end portion of the long resin molded article is heated so as to soften the end portion of the long resin molded article. The design surface of the heated end portion is pressed so as to stretch resin on a side of the design surface thereby forming an inclined surface on the end portion, whereby the end portion is inclined from the design surface at the end portion to said attachment surface at the end portion along said inclined surface. The attachment surface of the heated end portion is pressed so as to form a cavity on the attachment surface and stretch resin on a side of the attachment surface.

Abstract: A method for molding an end of a long resin molded article is disclosed. The long resin molded article is obtained by extrusion molding and having a design surface and an attachment surface extended in a longitudinal direction of the long resin molded article, and the attachment surface is attached to other parts. An end portion of the long resin molded article is heated so as to soften the end portion of the long resin molded article. The design surface of the heated end portion is pressed so as to stretch resin on a side of the design surface thereby forming an inclined surface on the end portion, whereby the end portion is inclined from the design surface at the end portion to said attachment surface at the end portion along said inclined surface. And the attachment surface of the heated end portion is pressed so as to form a cavity on the attachment surface and stretch resin on a side of the attachment surface.

Abstract: A silicon oxide film and a polysilicon film are formed on a silicon substrate and are selectively etched to form a contact hole in a region where an emitter is to be formed. A polysilicon film is laid on the substrate and two polysilicon films are patterned to form an emitter electrode and a gate electrode made of the two polysilicon films which are doped with arsenic. The arsenic is diffused from the polysilicon films of the emitter electrode into the silicon substrate to form an N.sup.+ emitter layer which has a high concentration and is shallow. Consequently, the contamination of a gate insulator film can be prevented from occurring and a bipolar transistor having high performance, for example, a high current amplification factor or the like can be formed.

Abstract: Granulocytes can be removed from blood by bringing the blood into contact with a carrier having higher affinity to granulocytes than to lymphocytes. the carrier may preferably be a substance having a contact angle in a range of 55.degree.-95.degree. to water, e.g., polystyrene, cellulose acetate, nylon, polytrifluoroethylene or polyethylene terephthalate. A granulocyte removing apparatus is also disclosed. It comprises a granulocyte-adsorbing portion enclosing therein a carrier having higher affinity to granulocytes than to lymphocytes, a blood inflow port for causing blood to flow into the adsorbing portion, and a blood outflow port for allowing the blood, which has flowed in the adsorbing portion, to flow out of the adsorbing portion.

Abstract: A silicon oxide film and a polysilicon film are formed on a silicon substrate and are selectively etched to form a contact hole in a region where an emitter is to be formed. A polysilicon film is laid on the substrate and two polysilicon films are patterned to form an emitter electrode and a gate electrode made of the two polysilicon films which are doped with arsenic. The arsenic is diffused from the polysilicon films of the emitter electrode into the silicon substrate to form an N.sup.+ emitter layer which has a high concentration and is shallow. Consequently, the contamination of a gate insulator film can be prevented from occurring and a bipolar transistor having high performance, for example, a high current amplification factor or the like can be formed.

Abstract: A silicon oxide film as a dielectric film and a silicon nitride film or a polysilicon film as a protection film for the silicon oxide film are formed on a silicon substrate. After the two films are selectively etched to form contact holes of a bipolar transistor, a polysilicon film as a conductive film is laid on the entire substrate and selectively etched to form electrodes. In a MIS transistor, the protection film of the silicon nitride film serves as a gate insulator film and the protection film of the polysilicon film serves as a gate electrode. Accordingly, contamination to the gate insulator film at formation of contact holes of the bipolar transistor is prevented, and an excellent semiconductor with Bi-MOS structure is manufactured with low cost.

Abstract: A method for assessing the prognosis of a patient undergoing therapy for cancer by measuring the granulocyte/lymphocyte ratio of the patient's blood and comparing the ratio to a normal range of 1.6.+-.0.6. The prognosis is considered improved when the G/L value is within the range as compared to when it is greater than the same.

Abstract: The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1) . The IIL comprises an emitter, a base and a collector which are respectively comprised of a high-density n.sup.+ -type first buried layer (5), a p.sup.+ -type second buried layer (8) having a lower impurity density than the n.sup.+ -type first buried layer (5), and at least one of n.sup.+ -type diffused layer (31). The semiconductor device thus constituted makes it possible to increase the emitter injection efficiency while the base impurity density is kept high, and also to decrease the base width, so that the collector-emitter breakdown voltage and current gain of the IIL can be more improved and also the operation speed of the IIL can be made higher.

Abstract: In a a semiconductor device having a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same substrate, grooves that reach an n.sup.+ -type buried layer 5 serving as an emitter of the IIL and an n.sup.+ -type buried layer 4 serving as a collector of the vertical npn transistor are formed at the same time, and an oxide film 101 is formed only on the sidewall of each groove; in the grooves, n.sup.+ -type polycrystalline silicon films 103 and 102 are formed, which are made to serve as an emitter lead-out portion of the IIL and a collector wall of the vertical npn transistor, respectively; a p-type diffused layer 17 serving as an injector of the IIL and a p-type diffused layer 18 and p.sup.