Abstract: A weatherstrip having an upper lip and a support section on one side defining therebetween a panel receiving groove and having a hollow seal on the other side. A sponge rubber material is integrally provided with at least a portion of the upper lip and faces the panel receiving groove, to thus firmly bond with a panel and to absorb a bending deformation of the weatherstrip at corners of the panel. Such as a weatherstrip is particularly suitable for use as a weatherstrip for a sliding roof of an automotive vehicle.

Abstract: The present invention provides a semiconductor device, in particular, a semiconductor device comprising a vertical npn transistor, a vertical pnp transistor and an IIL which are integrated on the same one-conductivity type semiconductor substrate (1). The IIL comprises an emitter, a base and a collector which are respectively comprised of a high-density n.sup.+ -type first buried layer (5), a p.sup.+ -type second buried layer (8) having a lower impurity density than the n.sup.+ -type first buried layer (5), and at least one of n.sup.+ -type diffused layer (31).The semiconductor device thus constituted makes it possible to increase the emitter injection efficiency while the base impurity density is kept high, and also to decrease the base width, so that the collector-emitter breakdown voltage and current gain of the IIL can be more improved and also the operation speed of the IIL can be made higher.