Patents by Inventor Masahiro Niimi

Masahiro Niimi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20010008281
    Abstract: A semiconductor memory device that performs a flash write operation without increasing the circuit area. Column selection lines CL0-CL7 extend parallel to word lines at locations corresponding to where column gates are formed. During a flash write mode, the subcolumn decoder 14 simultaneously selects the column selection lines. This writes cell information to every memory cell connected to the selected word line.
    Type: Application
    Filed: March 6, 2001
    Publication date: July 19, 2001
    Applicant: Fujitsu Limited
    Inventors: Masahiro Niimi, Yasuharu Sato, Tadao Aikawa, Hitoshi Ikeda, Hiroyuki Kobayashi
  • Patent number: 6097658
    Abstract: A DRAM (Dynamic Random Access Memory) having a plurality of memory cells includes a data read/write circuit reading or writing data for the memory cells, a self-refresh circuit refreshing data stored in the memory cells, and a power supply unit for supplying electric power to the data read/write circuit and the self-refresh circuit, the electric power having a first voltage level in a normal operation mode and a second voltage level in a self-refresh mode, wherein the second voltage level is lower than the first voltage level.
    Type: Grant
    Filed: November 10, 1998
    Date of Patent: August 1, 2000
    Assignees: Fujitsu Limited, Fujitsu VLSI Limited
    Inventors: Yasuharu Satoh, Yoshihiro Takemae, Takaaki Furuyama, Mitsuhiro Nagao, Masahiro Niimi
  • Patent number: 5867438
    Abstract: A DRAM (dynamic Random Access Memory) having a plurality of memory cells includes a data read/write circuit reading or writing data for the memory cells, a self-refresh circuit refreshing data stored in the memory cells, and a power supply unit for supplying electric power to the data read/write circuit and the self-refresh circuit, the electric power having a first voltage level in a normal operation mode and a second voltage level in a self-refresh mode, wherein the second voltage level is lower than the first voltage level.
    Type: Grant
    Filed: October 4, 1996
    Date of Patent: February 2, 1999
    Assignees: Fujitsu Limited, Fujitsu VLSI Limited
    Inventors: Yukihiro Nomura, Yasuharu Satoh, Yoshihiro Takemae, Takaaki Furuyama, Mitsuhiro Nagao, Masahiro Niimi
  • Patent number: 5704031
    Abstract: Each client unit 2 diagnoses its operation environment (hardware, software, firmware and so on) at the start time of itself, and when an abnormality or any change (deletion, modification or creation) has occurred and it is repairable, the client unit 2 itself repairs itself or maintenance process is conducted by reinstallation from the server unit 1. When it is unrepairable, the client unit 2 releases itself from the LAN line 100. In this way, by having the client unit 2 be provided with self maintenance capability to allow each client unit 2 to conduct the self maintenance of itself such a client/server system is realized by which loads of the server unit 1 and the LAN line 100 are reduced as well as the probability of system down occurrence is lowered, further the capability of the entire system is improved and a maintenance engineer or a user is not required much labor.
    Type: Grant
    Filed: December 8, 1995
    Date of Patent: December 30, 1997
    Assignee: Fujitsu Limited
    Inventors: Ichizou Mikami, Toshio Komasaka, Masahiro Niimi, Takashi Miyamoto
  • Patent number: 5594699
    Abstract: A DRAM (Dynamic Random Access Memory) having a plurality of memory cells includes a data read/write circuit reading or writing data for the memory cells, a self-refresh circuit refreshing data stored in the memory cells, and a power supply unit for supplying electric power to the data read/write circuit and the self-refresh circuit, the electric power having a first voltage level in a normal operation mode and a second voltage level in a self-refresh mode, wherein the second voltage level is lower than the first voltage level.
    Type: Grant
    Filed: September 16, 1994
    Date of Patent: January 14, 1997
    Assignees: Fujitsu Limited, Fujitsu Vlsi Limited
    Inventors: Yukihiro Nomura, Yasuharu Satoh, Yoshihiro Takemae, Takaaki Furuyama, Mitsuhiro Nagao, Masahiro Niimi
  • Patent number: 5462864
    Abstract: This invention allows high-purity maltose to be manufactured both simply and economically by sequentially going through the steps of liquefaction of starch, saccharification of the resulting liquefied substance by combining with general-purpose enzymes and further saccharification with an enzyme which hydrolyzes oligosaccharides of trisaccharide or more, and also allows the economical and favorable manufacturing of maltitol, the reduced product of the above maltose, by going through an additional reduction step.
    Type: Grant
    Filed: May 18, 1992
    Date of Patent: October 31, 1995
    Assignee: Towa Chemical Industry Co., Ltd.
    Inventors: Masahiro Niimi, Yukari Hariu, Koichi Kataura, Yoshibumi Ishii, Kazuaki Kato
  • Patent number: 5141859
    Abstract: This invention allows high-purity maltose to be manufactured both simply and economically by sequentially going through the steps of liquefaction of starch, saccharification of the resulting liquefied substance by combining with general-purpose enzymes and further saccharification with an enzyme which hydrolyzes oligosaccharides of trisaccharide or more, and also allows the economical and favorable manufacturing of maltitol, the reduced product of the above maltose, by going through an additional reduction step.
    Type: Grant
    Filed: October 24, 1989
    Date of Patent: August 25, 1992
    Assignee: Towa Chemical Industry Co., Ltd.
    Inventors: Masahiro Niimi, Yukari Hariu, Koichi Kataura, Yoshibumi Ishii, Kazuaki Kato