Abstract: [Problem] To Provide a fabric-like sensor in which an output signal can be improved when in use and damage or fracture of a sensor element hardly occurs, and a fabric-like sensor device using it. Solution In a fabric-like sensor S having a fabric base material 1 and a line-shaped sensor element 2, at least one line-shaped cavity portion 11 is provided inside the fabric base material 1, and at least a part of the cavity portion 11 is composed of a raw fabric at least a part of the cavity portion has no elasticity in a line direction of the cavity portion 11, and further the line-shaped sensor element 2 is arranged in a state of not being substantially constrained or fixed in at least one of cavity portions in a fabric 1.

Abstract: Disclosed is a sleep induction device which exhibits excellent hypnotic effects using light rather than ultrasonic waves or electrical voltages to induce sleep. When the face of a patient is irradiated with diffused ultra narrow band light having a FWHM of 10 nm or less, the specified wavelength of light has excellent hypnotic effects. The sleep induction device is provided with: an ultra narrow band light irradiation means which generates a blue to green ultra narrow band light having a FWHM of 10 nm or less and a peak wavelength range of 430-550 nm; and a diffusion means for reducing the illumination intensity of the light irradiated from the ultra narrow band light irradiation means onto the skin surface of the face to 1-300 lux, and expanding the emission area to the entire face. The green ultra narrow band light has a sleep-inducing effect, and the blue one has a stronger sleep-inducing effect.

Abstract: There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.

Abstract: Disclosed is a sleep induction device which exhibits excellent hypnotic effects using light rather than ultrasonic waves or electrical voltages to induce sleep. When the face of a patient is irradiated with diffused ultra narrow band light having a FWHM of 10 nm or less, the specified wavelength of light has excellent hypnotic effects. The sleep induction device is provided with: an ultra narrow band light irradiation means which generates a blue to green ultra narrow band light having a FWHM of 10 nm or less and a peak wavelength range of 430-550 nm; and a diffusion means for reducing the illumination intensity of the light irradiated from the ultra narrow band light irradiation means onto the skin surface of the face to 1-300 lux, and expanding the emission area to the entire face. The green ultra narrow band light has a sleep-inducing effect, and the blue one has a stronger sleep-inducing effect.

Abstract: An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

Abstract: An edge ring formed of a material including boron carbide and silicon carbide is provided. The content by percentage of the boron carbide contained in the material is in a range between 30% and 50%.

Abstract: There is provision of an etching method including a step of preparing a substrate over which a boron film or a boron-containing film is formed, a step of supplying a process gas containing chlorine gas, fluorine-containing gas, and hydrogen-containing gas, and a step of etching the boron film or the boron-containing film via a mask using a plasma formed from the process gas.

Abstract: An annular member is disposed to surround a pedestal for receiving a substrate in a plasma processing apparatus. The annular member contains quartz and silicon. A content percentage of the silicon in the quartz and the silicon is 2.5% or more and 10% and less by weight.

Abstract: Disclosed are devices and methods that can help heal skin wounds and grow hair by irradiating light from light emitting diodes (LED). One device is provided with: an ultra-narrowband light irradiation means which generates ultra-narrowband red light with peak wavelength range 620-660 nm and FWHM 10 nm or less; an ultra-narrowband light irradiation means which generates ultra-narrowband green light with peak wavelength range 500-540 nm and FWHM 10 nm or less; an ultra-narrowband light irradiation means which generates ultra-narrowband blue light with peak wavelength range 440-480 nm and FWHM 10 nm or less; and an ultra-narrowband light irradiation means which generates ultra-narrowband red to near infrared light with peak wavelength range 700-2500 nm and FWHM 10 nm or less. In this way, cell growth factors such as HGF and KGF are acted upon by irradiating the affected area with ultra-narrowband monochromatic light of FWHM 10 nm or less, which has excellent effects in healing skin wounds and growing hair.

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.

Abstract: A method according to an embodiment includes (i) a step of preparing a workpiece in a processing container of a plasma processing apparatus, (ii) a first plasma processing step of generating a plasma of a first processing gas, which contains chlorine, in the processing container, (iii) a second plasma processing step of generating a plasma of a second processing gas, which contains fluorine, in the processing container, and (iv) a third plasma processing step of generating a plasma of a third processing gas, which contains oxygen, in the processing container. A plurality of sequences, each of which includes the first plasma processing step, the second plasma processing step, and the third plasma processing step, are performed.

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract: A method according to an embodiment includes (i) a step of preparing a workpiece in a processing container of a plasma processing apparatus, (ii) a first plasma processing step of generating a plasma of a first processing gas, which contains chlorine, in the processing container, (iii) a second plasma processing step of generating a plasma of a second processing gas, which contains fluorine, in the processing container, and (iv) a third plasma processing step of generating a plasma of a third processing gas, which contains oxygen, in the processing container. A plurality of sequences, each of which includes the first plasma processing step, the second plasma processing step, and the third plasma processing step, are performed.

Abstract: A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF3 gas, and O2 gas into a chamber and performing a plurality of etching processes on the silicon film with a plasma generated by the supplied HBr gas, NF3 gas, and O2 gas, gradually reducing a flow rate of the HBr gas during the plurality of etching processes, and adjusting a flow rate of the O2 gas according to the reduction of the HBr gas.

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract: Disclosed are devices and methods that can help heal skin wounds and grow hair by irradiating light from light emitting diodes (LED). One device is provided with: an ultra-narrowband light irradiation means which generates ultra-narrowband red light with peak wavelength range 620-660 nm and FWHM 10 nm or less; an ultra-narrowband light irradiation means which generates ultra-narrowband green light with peak wavelength range 500-540 nm and FWHM 10 nm or less; an ultra-narrowband light irradiation means which generates ultra-narrowband blue light with peak wavelength range 440-480 nm and FWHM 10 nm or less; and an ultra-narrowband light irradiation means which generates ultra-narrowband red to near infrared light with peak wavelength range 700-2500 nm and FWHM 10 nm or less. In this way, cell growth factors such as HGF and KGF are acted upon by irradiating the affected area with ultra-narrowband monochromatic light of FWHM 10 nm or less, which has excellent effects in healing skin wounds and growing hair.

Abstract: A method of processing a substrate using a substrate processing apparatus that has an electrostatic chuck including an insulating member inside which an electrode is included and provides a plasma process to a substrate mounted on the electrostatic chuck includes a first process of supplying a heat transfer gas having a second gas pressure to a back surface of the substrate while eliminating electric charges in the substrate using plasma of a process gas having a first gas pressure.

Abstract: Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.

Abstract: Provided is a method of etching a silicon oxide film. The method includes exposing a workpiece including the silicon oxide film and a mask formed on the silicon oxide film to plasma of a processing gas to etch the silicon oxide film. The mask includes a first film formed on the silicon oxide film and a second film formed on the first film, and the second film is constituted by a film having an etching rate lower than that of the first film with respect to active species in the plasma.

Abstract: A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.