Abstract: A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

Abstract: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

Abstract: Disclosed is a sleep induction device which exhibits excellent hypnotic effects using light rather than ultrasonic waves or electrical voltages to induce sleep. When the face of a patient is irradiated with diffused ultra narrow band light having a FWHM of 10 nm or less, the specified wavelength of light has excellent hypnotic effects. The sleep induction device is provided with: an ultra narrow band light irradiation means which generates a blue to green ultra narrow band light having a FWHM of 10 nm or less and a peak wavelength range of 430-550 nm; and a diffusion means for reducing the illumination intensity of the light irradiated from the ultra narrow band light irradiation means onto the skin surface of the face to 1-300 lux, and expanding the emission area to the entire face. The green ultra narrow band light has a sleep-inducing effect, and the blue one has a stronger sleep-inducing effect.

Abstract: A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

Abstract: Disclosed is a device that can heal skin wounds and grow hair by irradiating light from light emitting diodes (LED). The device is provided with: an ultra-narrowband light irradiation means which generates ultra-narrowband red light with peak wavelength range 620-660 nm and FWHM 10 nm or less; an ultra-narrowband light irradiation means which generates ultra-narrowband green light with peak wavelength range 500-540 nm and FWHM 10 nm or less; an ultra-narrowband light irradiation means which generates ultra-narrowband blue light with peak wavelength range 440-480 nm and FWHM 10 nm or less; and an ultra-narrowband light irradiation means which generates ultra-narrowband red to near infrared light with peak wavelength range 700-2500 nm and FWHM 10 nm or less. In this way, cell growth factors such as HGF and KGF are acted upon by irradiating the affected area with ultra-narrowband monochromatic light of FWHM 10 nm or less, which has excellent effects in healing skin wounds and growing hair.

Abstract: A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.

Abstract: A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: Provided are a storage medium and a cleaning method of a plasma processing apparatus capable of more securely removing a deposit and preventing occurrence of any problems caused by a remaining deposit as compared to the conventional method. A cleaning gas which contains an oxygen gas and a nitrogen gas and has a ratio of “nitrogen gas flow rate/(nitrogen gas flow rate+oxygen gas flow rate)” in a range from about 0.05 to about 0.5 is introduced into a processing chamber when a substrate is not mounted on a mounting table, and, then, the inside of the processing chamber is cleaned by applying a high frequency power between the mounting table and an upper electrode and exciting the cleaning gas into plasma.

Abstract: Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33×10 Pa) to 150 mTorr (2.0×10 Pa) by using as a processing gas a mixture gas of CF4, CHF3, and C4F8, and the mask layer is etched by using a COS-containing gas as a processing gas.

Abstract: Compared to a conventional halogen lamp and optical filter, wavelength range of a light is narrowed, throughput of a desired wavelength range is increased, and irradiation of a light of a different wavelength range is enabled. The present apparatus for facial treatment and hair restoration is a combination of a light source means, which is a light source of a monochromatic light of an ultra narrow bandwidth having a half bandwidth of 10 nm or less emitted from a monochromatic LED light source, a monochromatic laser diode light source, or a laser light source, and a diffusion means. Specifically, in a case where the LED light source is used, the apparatus includes a bandpass filter for focusing the wavelength range of each light emitted from the light source and a diffusion lens for diffusing a light which passed through the filter and has an ultra narrow bandwidth with a half bandwidth of 10 nm or less.

Abstract: A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

Abstract: A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.

Abstract: An annular assembly for plasma processing which can prevent poor attraction of a substrate. The annular assembly is comprised of a focus ring that is mounted on a mounting stage and disposed such as to surround an outer periphery of a substrate subjected to the plasma processing, and an outer annular member that is disposed such as to surround an outer periphery of the focus ring. The outer annular member has an exposed surface that is exposed into a processing space in which plasma is produced, and the exposed surface is covered with yttria.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. An upper electrode is disposed to face a target substrate placed within the process container. An electric feeder includes a first cylindrical conductive member continuously connected to the upper electrode in an annular direction. The electric feeder is configured to supply a first RF output from a first RF power supply to the upper electrode.

Abstract: A plasma processing apparatus includes a process container configured to have a vacuum atmosphere therein. A first upper electrode is disposed to have a ring shape and to face a target substrate placed within the process container. A second upper electrode is disposed radially inside the first upper electrode and electrically insulated therefrom. A first electric feeder is configured to supply a first RF output from a first RF power supply to the first upper electrode at a first power value. A second electric feeder branches from the first electric feeder and is configured to supply the first RF output from the first RF power supply to the second upper electrode at a second power value smaller than the first power value.

Abstract: In a plasma apparatus 1 for performing plasma processing on a substrate W to be processed, an upper electrode 21, which faces opposite a susceptor 5 which is a lower electrode, has an electrode supporting body 22 and an electrode plate 23. In the center on the side of the electrode supporting body at the boundary between the two, a hollow 62, the dimensions of which are determined such that a resonance is generated at a frequency of supplied high-frequency electric power and an electric field orthogonal to the electrode plate 23 is generated inside, is provided. Furthermore, a shield ring which surrounds the electrode plate 23 has a shape in which the lower surface is in the same level as the electrode plate 23, and it is made of a material that is not easily eroded by the plasma. By this, processing small features becomes possible with uniform distribution of plasma and in less degradation due to change over time.

Abstract: In a first step and a thirst step, etching gases are used which contain fluorocarbon gases having C/F atom number ratios higher than that in a second step. A hole is formed to a midpoint in a silicon oxide film in the first step, the hole is formed until a base SiN film begins to be exposed or immediately before it is exposed in the second step, and overetching is performed in the third step. This enables even a hole having a fine diameter and a high aspect ratio to be formed in an excellent shape.