Patents by Inventor Masahiro Sakai

Masahiro Sakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11982049
    Abstract: The present disclosure describes a polyester fabric for airbags formed from a polyester fiber, which can reduce costs, and the polyester fabric for airbags has high restraint performance for receiving the occupant during deployment and maintains the performance at high levels even after aging, while maintaining the mechanical characteristics as a fabric for airbags. A polyester fabric for airbags has a resin provided on at least one surface wherein the polyester fabric has an optimized crimp ratio and has a scrubbing test count of 400 or more after aging treatment at 70° C. at 95% RH for 408 hours.
    Type: Grant
    Filed: December 25, 2020
    Date of Patent: May 14, 2024
    Assignee: TOYOBO CO., LTD.
    Inventors: Shuhei Takeuchi, Masahiro Sakai
  • Publication number: 20240105912
    Abstract: A non-aqueous electrolyte secondary battery including a positive electrode, a negative electrode, and a non-aqueous electrolyte, wherein the positive electrode includes positive electrode active material particles, the positive electrode active material particles include a composite oxide containing lithium and a transition metal, and a cover material covering at least a portion of a surface of the composite oxide, and the cover material includes a metal oxide, and a phosphorus compound covering at least a portion of a surface of the metal oxide.
    Type: Application
    Filed: January 24, 2022
    Publication date: March 28, 2024
    Applicant: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Masahiro Sakai, Takuji Tsujita
  • Patent number: 11862689
    Abstract: Group-III element nitride semiconductor substrate including a first surface and a second surface that are easy to visually distinguish from each other. An end portion is easily detected with an optical sensor, a large effective area (area that can be used in device production) can be secured, and warping of the entirety of the substrate is reduced. A Group-III element nitride semiconductor substrate includes a first surface; and a second surface, wherein the first surface is a mirror surface, the second surface has a second-surface central region and a second-surface outer peripheral region, the second-surface central region is a mirror surface, and the second-surface outer peripheral region is a non-mirror surface.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: January 2, 2024
    Assignee: NGK INSULATORS, LTD.
    Inventors: Katsuhiro Imai, Masahiro Sakai, Hiroki Kobayashi
  • Publication number: 20230395373
    Abstract: A Group-III element nitride semiconductor substrate includes: a first surface; and a second surface, wherein warping of a crystal plane of the first surface has a plurality of extremes.
    Type: Application
    Filed: August 18, 2023
    Publication date: December 7, 2023
    Inventors: Masahiro SAKAI, Katsuhiro IMAI, Hiroki KOBAYASHI
  • Publication number: 20230282711
    Abstract: Group-III element nitride semiconductor substrate including a first surface and a second surface that are easy to visually distinguish from each other. An end portion is easily detected with an optical sensor, a large effective area (area that can be used in device production) can be secured, and warping of the entirety of the substrate is reduced. A Group-III element nitride semiconductor substrate includes a first surface; and a second surface, wherein the first surface is a mirror surface, the second surface has a second-surface central region and a second-surface outer peripheral region, the second-surface central region is a mirror surface, and the second-surface outer peripheral region is a non-mirror surface.
    Type: Application
    Filed: February 17, 2023
    Publication date: September 7, 2023
    Inventors: Katsuhiro IMAI, Masahiro SAKAI, Hiroki KOBAYASHI
  • Patent number: 11746446
    Abstract: A technical problem to be solved by the present invention is to provide a non-coated fabric for airbags and a coated fabric for airbags that are both less likely to have yarn slippage after being sewn, and that can be compactly stored; and airbags using these fabrics. The fabric for airbags according to the present invention is a non-coated fabric for airbags or a coated fabric for airbags that both have a crimp ratio of 12% or more in the warp direction, and a crimp ratio of 61 or less in the weft direction.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: September 5, 2023
    Assignee: TOYOBO CO., LTD.
    Inventors: Masahiro Sakai, Yosihiro Matsui, Kenichiro Kano
  • Publication number: 20230220587
    Abstract: There is provided a Group-III element nitride semiconductor substrate including a first surface and a second surface, in which even when devices to be produced on the first surface are increased in size, variations in device characteristics between the devices in the same substrate are suppressed. A Group-III element nitride semiconductor substrate includes a first surface and a second surface. The Group-III element nitride semiconductor substrate satisfies at least one of the following items (1) to (3): (1) The main surface has a maximum height Wz of a surface waviness profile of 150 nm or less; (2) The main surface has a root mean square height Wq of the surface waviness profile of 25 nm or less; (3) The main surface has an average length WSm of surface waviness profile elements of 0.5 mm or more.
    Type: Application
    Filed: March 8, 2023
    Publication date: July 13, 2023
    Inventors: Masahiro SAKAI, Shohei OUE
  • Publication number: 20230215969
    Abstract: It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.
    Type: Application
    Filed: March 10, 2022
    Publication date: July 6, 2023
    Inventors: Masahiro SAKAI, Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Takashi YOSHINO, Katsuhiro IMAI, Yoshitaka KURAOKA
  • Publication number: 20230138268
    Abstract: A control system includes at least one processor and at least one memory. The at least one processor is configured to determine operation data by repeating a process of calculating control target data indicating a predicted value of a control target in a plant and the operation data indicating an operation value of a control device of the plant by a given calculation model based on observation data indicating an actual value of the plant.
    Type: Application
    Filed: October 26, 2022
    Publication date: May 4, 2023
    Applicants: ENEOS Corporation, Preferred Networks, Inc.
    Inventors: Taichiro HIRAI, Kosei KANUMA, Hiroyuki HINO, Yu YOSHIMURA, Kazuki UEHARA, Akira KINOSHITA, Masahiro SAKAI, Keigo KAWAMURA, Kaizaburo KIDO, Keisuke YAHATA, Keisuke NAKATA, Yo IIDA, Takuro MORIYAMA, Masashi YOSHIKAWA, Tsutomu OGASAWARA
  • Publication number: 20230119023
    Abstract: A free-standing substrate, for growing epitaxial crystal composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof, includes a nitrogen polar surface and group 13 element polar surface. The nitrogen polar surface is warped in a convex shape, and a chamfer part is provided in an outer peripheral part of the nitrogen polar surface.
    Type: Application
    Filed: December 20, 2022
    Publication date: April 20, 2023
    Inventors: Masahiro SAKAI, Takashi YOSHINO
  • Patent number: 11611017
    Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. The crystal of the nitride of the group 13 element contains oxygen atoms in a content of 1×1018 atom/cm3 or less, silicon atoms, manganese atoms, carbon atoms, magnesium atoms and calcium atoms in contents of 1×1017 atom/cm3 or less, chromium atoms in a content of 1×1016 atom/cm3 or less and chlorine atoms in a content of 1×1015 atom/cm3 or less.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: March 21, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Takanao Shimodaira, Masahiro Sakai, Takashi Yoshino
  • Patent number: 11555257
    Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: January 17, 2023
    Assignee: NGK INSULATORS, LTD.
    Inventors: Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Takanao Shimodaira, Masahiro Sakai, Takashi Yoshino
  • Publication number: 20220372697
    Abstract: The present invention is to provide a polyester fabric for airbags famed from a polyester fiber, which can reduce costs, and the polyester fabric for airbags has high restraint performance for receiving the occupant during deployment and maintains the performance at high levels even after aging, while maintaining the mechanical characteristics as a fabric for airbags. The solution to the object is to provide a polyester fabric for airbags having a coating resin on at least one surface characterized in that the polyester fabric has an optimized crimp ratio and has scrub test strokes of 400 or more after aging treatment at 70° C. at 95% RH for 408 hours.
    Type: Application
    Filed: December 25, 2020
    Publication date: November 24, 2022
    Inventors: Shuhei TAKEUCHI, Masahiro Sakai
  • Patent number: 11437233
    Abstract: A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.
    Type: Grant
    Filed: March 24, 2020
    Date of Patent: September 6, 2022
    Assignee: NGK INSULATORS, LTD.
    Inventors: Masashi Goto, Masahiro Sakai, Shohei Oue, Takashi Yoshino
  • Publication number: 20220209062
    Abstract: Provided are a light emitting device having a support layer having a surface with a three-dimensional shape, a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer, and a translucent electrode layer provided on a side of the light emitting functional layer opposite to the support layer. The support layer functions as a reflective electrode, and a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer. The light emitting functional layer has two or more layers composed of semiconductor single crystal grains. Each of the two or more layers has a single crystal structure in a direction approximately normal to the surface with a three-dimensional shape.
    Type: Application
    Filed: March 21, 2022
    Publication date: June 30, 2022
    Applicant: NGK INSULATORS, LTD.
    Inventors: Masahiko Namerikawa, Takashi Yoshino, Yoshitaka Kuraoka, Masahiro Sakai
  • Publication number: 20220199854
    Abstract: It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.
    Type: Application
    Filed: March 10, 2022
    Publication date: June 23, 2022
    Inventors: Masahiro SAKAI, Takayuki HIRAO, Hirokazu NAKANISHI, Mikiya ICHIMURA, Takanao SHIMODAIRA, Takashi YOSHINO, Katsuhiro IMAI, Yoshitaka KURAOKA
  • Patent number: 11358562
    Abstract: Provided is an airbag base fabric that has a low air permeability sufficient to ensure the safety of occupants and heat resistance sufficient to withstand high-power, high-temperature gas generated from a recent downsized inflator, and that is capable of being packaged compactly. Also provided is an airbag comprising the base fabric. An airbag base fabric comprising a synthetic fiber multifilament having a total fineness of 500 to 750 dtex, the airbag base fabric having an areal weight of 225 to 245 g/m2, air permeability at 20 kPa of 0.2 to 0.8 L/cm2/min, and edgecomb resistance according to the ASTM D 6479 method of 300 to 600 N in both warp and weft directions.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: June 14, 2022
    Assignee: TOYOBO CO., LTD.
    Inventors: Masahiro Sakai, Hirotaka Harada
  • Publication number: 20220118937
    Abstract: The present invention addresses the problem of providing: a coated fabric for airbags that is less likely to have yarn slippage after being sewn, and that can also be compactly stored; and an airbag using the coated fabric. As means for achieving this object, a coated fabric for airbags that has a crimp ratio of 12% or more in the warp direction and a crimp ratio of 6% or less in the weft direction is provided.
    Type: Application
    Filed: January 23, 2020
    Publication date: April 21, 2022
    Inventors: Masahiro Sakai, Yoshihiro Matsui, Kenichiro Kano
  • Patent number: 11309455
    Abstract: A layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, when the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.
    Type: Grant
    Filed: February 21, 2020
    Date of Patent: April 19, 2022
    Assignee: NGK INSULATORS, LTD.
    Inventors: Takayuki Hirao, Hirokazu Nakanishi, Mikiya Ichimura, Takanao Shimodaira, Masahiro Sakai, Takashi Yoshino
  • Patent number: 11245054
    Abstract: A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.
    Type: Grant
    Filed: March 23, 2020
    Date of Patent: February 8, 2022
    Assignee: NGK INSULATORS, LTD.
    Inventors: Masahiro Sakai, Shohei Oue, Masashi Goto, Takashi Yoshino