Abstract: A free-standing substrate, for growing epitaxial crystal composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or a mixed crystal thereof, includes a nitrogen polar surface and group 13 element polar surface. The nitrogen polar surface is warped in a convex shape, and a chamfer part is provided in an outer peripheral part of the nitrogen polar surface.

Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. The crystal of the nitride of the group 13 element contains oxygen atoms in a content of 1×1018 atom/cm3 or less, silicon atoms, manganese atoms, carbon atoms, magnesium atoms and calcium atoms in contents of 1×1017 atom/cm3 or less, chromium atoms in a content of 1×1016 atom/cm3 or less and chlorine atoms in a content of 1×1015 atom/cm3 or less.

Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.

Abstract: The present invention is to provide a polyester fabric for airbags famed from a polyester fiber, which can reduce costs, and the polyester fabric for airbags has high restraint performance for receiving the occupant during deployment and maintains the performance at high levels even after aging, while maintaining the mechanical characteristics as a fabric for airbags. The solution to the object is to provide a polyester fabric for airbags having a coating resin on at least one surface characterized in that the polyester fabric has an optimized crimp ratio and has scrub test strokes of 400 or more after aging treatment at 70° C. at 95% RH for 408 hours.

Abstract: A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.

Abstract: Provided are a light emitting device having a support layer having a surface with a three-dimensional shape, a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer, and a translucent electrode layer provided on a side of the light emitting functional layer opposite to the support layer. The support layer functions as a reflective electrode, and a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer. The light emitting functional layer has two or more layers composed of semiconductor single crystal grains. Each of the two or more layers has a single crystal structure in a direction approximately normal to the surface with a three-dimensional shape.

Abstract: It is provided a seed crystal layer, composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof, on an alumina layer on a single crystal substrate. By annealing under reducing atmosphere at a temperature of 950° C. or higher and 1200° C. or lower, convex-concave morphology is formed on a surface of the seed crystal layer so as to have an RMS value of 180 nm to 700 nm measured by an atomic force microscope. On the surface of the seed crystal layer, it is grown a group 13 nitride crystal layer composed of a group 13 nitride crystal selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof.

Abstract: Provided is an airbag base fabric that has a low air permeability sufficient to ensure the safety of occupants and heat resistance sufficient to withstand high-power, high-temperature gas generated from a recent downsized inflator, and that is capable of being packaged compactly. Also provided is an airbag comprising the base fabric. An airbag base fabric comprising a synthetic fiber multifilament having a total fineness of 500 to 750 dtex, the airbag base fabric having an areal weight of 225 to 245 g/m2, air permeability at 20 kPa of 0.2 to 0.8 L/cm2/min, and edgecomb resistance according to the ASTM D 6479 method of 300 to 600 N in both warp and weft directions.

Abstract: The present invention addresses the problem of providing: a coated fabric for airbags that is less likely to have yarn slippage after being sewn, and that can also be compactly stored; and an airbag using the coated fabric. As means for achieving this object, a coated fabric for airbags that has a crimp ratio of 12% or more in the warp direction and a crimp ratio of 6% or less in the weft direction is provided.

Abstract: A layer of a crystal of a nitride of a group 13 element selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof includes an upper surface and a bottom surface. The upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, and the high-luminance light-emitting part has a portion extending along an m-plane of the crystal of the nitride of the group 13 element, when the upper surface is observed by cathode luminescence. The upper surface has an arithmetic average roughness Ra of 0.05 nm or more and 1.0 nm or less.

Abstract: A base substrate includes a supporting substrate and a base crystal layer provided on a main face of the supporting substrate composed of a crystal of a group 13 nitride and having a crystal growth surface. The base crystal layer includes a raised part. A reaction product of a material of the supporting substrate and the crystal of the group 13 nitride, metal of a group 13 element and/or void is present between the raised part and supporting substrate.

Abstract: A crystal of a group 13 nitride has an upper surface and lower surface and is composed of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride or the mixed crystals thereof. When the upper surface of the layer of the crystal of the group 13 nitride is observed by cathode luminescence, the upper surface includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part. A half value width of reflection at the (0002) plane of a X-ray rocking curve on the upper surface is 3000 seconds or less and 20 seconds or more.

Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of the crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride.

Abstract: A technical problem to be solved by the present invention is to provide a non-coated fabric for airbags and a coated fabric for airbags that are both less likely to have yarn slippage after being sewn, and that can be compactly stored; and airbags using these fabrics. The fabric for airbags according to the present invention is a non-coated fabric for airbags or a coated fabric for airbags that both have a crimp ratio of 12% or more in the weft direction, and a crimp ratio of 61 or less in the warp direction.

Abstract: According to an aspect of a present invention, there is provided a semiconductor device including a first power monitoring device and a second power monitoring device. The first power monitoring device outputs first operating power that is to be supplied to a second control section. The second power monitoring device outputs second operating power that is to be supplied to a first control section. Based on a first setting given from the first control section, a first power monitoring circuit autonomously verifies whether the second operating power is normal, and periodically transmits the result of verification to the second control section as first error information. Based on a second setting given from the second control section, a second power monitoring circuit autonomously verifies whether the first operating power is normal, and periodically transmits the result of verification to the first control section as second error information.

Abstract: A group 13 nitride layer is composed of a polycrystalline group 13 nitride and is constituted by a plurality of monocrystalline particles having a particular crystal orientation approximately in a normal direction. The group 13 nitride comprises gallium nitride, aluminum nitride, indium nitride or the mixed crystal thereof. The group 13 nitride layer includes an upper surface and a bottom surface, and a full width at half maximum of a (1000) plane reflection of X-ray rocking curve on the upper surface is 20000 seconds or less and 1500 seconds or more.

Abstract: Provided is an airbag base fabric that has a low air permeability sufficient to ensure the safety of occupants and heat resistance sufficient to withstand high-power, high-temperature gas generated from a recent downsized inflator, and that is capable of being packaged compactly. Also provided is an airbag comprising the base fabric. An airbag base fabric comprising a synthetic fiber multifilament having a total fineness of 500 to 750 dtex, the airbag base fabric having an areal weight of 225 to 245 g/m2, air permeability at 20 kPa of 0.2 to 0.8 L/cm2/min, and edgecomb resistance according to the ASTM D 6479 method of 300 to 600 N in both warp and weft directions.

Abstract: According to one embodiment, an information processing apparatus includes a preference information obtainer that obtains preference information indicating preferences of a target user to which recommendation is to be made, the preferences ranging over a plurality of genres. The information processing apparatus includes a recommendation item determiner that determines, using the preference information of the target user and recommendation candidate information about a plurality of recommendation candidates ranging over a plurality of genres, a recommendation item to be recommended to the target user from the plurality of recommendation candidates, the recommendation candidate information being stored in an accessible storage apparatus.

Abstract: A layer of a crystal of a group 13 nitride selected from gallium nitride, aluminum nitride, indium nitride and the mixed crystals thereof has an upper surface and a bottom surface. The upper surface of a crystal layer of the group 13 nitride includes a linear high-luminance light-emitting part and a low-luminance light-emitting region adjacent to the high-luminance light-emitting part, observed by cathode luminescence. The high-luminance light-emitting part includes a portion extending along an m-plane of the crystal of the group 13 nitride. A normal line to the upper surface has an off-angle of 2.0° or less with respect to <0001> direction of the crystal of the nitride of the group 13 element.

Abstract: A base substrate includes a supporting substrate comprising aluminum oxide, and a base crystal layer provided on a main face of the supporting substrate, comprising a crystal of a nitride of a group 13 element and having a crystal growth surface. At lease one of a metal of a group 13 element and a reaction product of a material of the supporting substrate and the crystal of the nitride of the group 13 element is present between the raised part and the supporting substrate. The reaction product contains at least aluminum and a group 13 element.