Abstract: A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

Abstract: A semiconductor device is configured of a semiconductor chip which is sandwiched by first and second resin films having a wiring pattern. Plural semiconductor chips can be fabricated collectively by sandwiching the semiconductor chips by the first and second resin films, and productivity can be improved.

Abstract: A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

Abstract: A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.

Abstract: A semiconductor device 1 comprises a semiconductor substrate 2 having a through hole 3. A first insulation layer 4 having an opening 4a equal in diameter to the through hole 3 covers a front surface of the semiconductor substrate 2, and a first wiring layer 5 is formed thereon to cover the opening 4a. Further, a second insulation layer 6 is formed in the through hole 3 and on a rear surface of the semiconductor substrate 2. The second insulation layer 6 is formed to be in contact with an inner side of the first wiring layer 5 and has, in its contact portion, a plurality of small openings 6a smaller in diameter than the opening 4 of the first insulation layer 4. Further, a second wiring layer 7 is formed to fill the inside of the through hole 3, and the second wiring layer 7 is in contact with the inner side of the first wiring layer 5 via the small openings 6a of the second insulation layer 6.

Abstract: The real-time watch device for displaying a value in a memory used by a target system during execution of a program in the target system, includes: a watch information acquisition section for acquiring registered watch information; a memory access section for reading a value stored at a received memory address from the memory; a memory accessibility determination section for determining whether or not a memory address to be referred to given in the acquired watch information is accessible; and a watch display section for outputting a memory address determined accessible by the memory accessibility determination section to the memory access section and displaying a value read by the memory access section.

Abstract: A cured film including: organic ultraviolet-absorbing particles having an average particle diameter of 1 to 200 nm; and inorganic ultraviolet-absorbing particles and/or colloidal silica having an average particle diameter of 1 to 200 nm; the particles being dispersed in a matrix having an Si—O bond.

Abstract: A semiconductor device 1 has a through hole 3 formed in a second substrate 2. On the front surface of the semiconductor substrate 2, a first insulating layer 4 is coated having an opening 4a of the same diameter as that of the through hole 3, and a first wiring layer 5 is formed on the first insulating layer 4. Further, near the first wiring layer 5, the through hole 3 and a through connection portion constituted of a third insulating layer 8 formed on the inner surface and the like and a third wiring layer 9 filled and formed in the through hole 3 are formed. In addition, a second wiring layer 7 internally contacting the through connection portion is electrically connected with the first wiring layer 5. Between the inner surface of the through hole 3 and the first wiring layer 5, a second insulating layer 6 intervenes so that the first wiring layer 5 is separated from the third wiring layer 9 filled and formed in the through hole 3.

Abstract: A semiconductor device includes a semiconductor substrate with an electrode pad on a main surface of the semiconductor substrate; a first penetrating electrode which includes a through hole formed through the semiconductor substrate in the thickness direction so as to reach a metallic bump formed on the electrode pad, an insulating resin formed to fill the through hole in and a conductor formed in the through hole with insulated from the semiconductor substrate by the insulating resin and electrically to connect the electrode pad and the rear surface of the semiconductor wafer; a semiconductor chip mounted on the rear surface of the semiconductor wafer so that a rear surface of the semiconductor chip is faced to the rear surface of the semiconductor wafer; and a wiring to electrically connect the first penetrating electrode and an electrode formed on the semiconductor chip.

Abstract: The present invention provides a method for quantitatively determining a reducing substance, which comprises reacting a reducing substance in a test specimen with iron (III) ions, reacting iron (II) ions formed by reduction of the iron (III) ions or residual iron (III) ions with a metal indicator which is capable of reacting specifically with the iron (II) ions or the residual iron (III) ions to undergo color development, and carrying out quantitative determination by measuring the degree of color development, wherein a chelating agent which is specific to copper ions is added to the test specimen before the reaction of the reducing substance with the iron (III) ions; and a reagent used for it.

Abstract: The present invention provides a method for quantitatively determining homocysteine in a biological specimen containing homocysteine and cysteine by use of an enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, which comprises (a) reacting the biological specimen with cysteine dioxygenase in the absence of a reducing agent, (b) subsequently reacting the resultant specimen of (a) with a reducing agent and the enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, and (c) measuring the concentration of the hydrogen sulfide thus obtained to determine the homocysteine concentration in the biological specimen; and a reagent for such a quantitative determination of homocysteine.

Abstract: A semiconductor device is configured of a semiconductor chip which is sandwiched by first and second resin films having a wiring pattern. Plural semiconductor chips can be fabricated collectively by sandwiching the semiconductor chips by the first and second resin films, and productivity can be improved.

Abstract: A plurality of signal processing semiconductor elements are stacked on or above a circuit board. A rewiring silicon chip is mounted on or above the circuit board. The rewiring silicon chip has an inner conductor layer for connection between the plural signal processing semiconductor elements and between the circuit board and the signal processing semiconductor elements. The circuit board and the plural signal processing semiconductor elements are electrically connected, and the plural signal processing semiconductor elements are electrically connected to each other. The interconnection of the plural signal processing semiconductor elements and the rearrangement of electrode pads of the signal processing semiconductor elements are realized by the rewiring silicon chip.

Abstract: The present invention provides a method for quantitatively determining homocysteine in a biological specimen containing homocysteine and cysteine by use of an enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, which comprises (a) reacting the biological specimen with cysteine dioxygenase in the absence of a reducing agent, (b) subsequently reacting the resultant specimen of (a) with a reducing agent and the enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, and (c) measuring the concentration of the hydrogen sulfide thus obtained to determine the homocysteine concentration in the biological specimen; and a reagent for such a quantitative determination of homocysteine.

Abstract: The present invention provides a method for quantitatively determining a reducing substance, which comprises reacting a reducing substance in a test specimen with iron (III) ions, reacting iron (II) ions formed by reduction of the iron (III) ions or residual iron (III) ions with a metal indicator which is capable of reacting specifically with the iron (II) ions or the residual iron (III) ions to undergo color development, and carrying out quantitative determination by measuring the degree of color development, wherein a chelating agent which is specific to copper ions is added to the test specimen before the reaction of the reducing substance with the iron (III) ions; and a reagent used for it.

Abstract: An air-barrier agent for an aqueous reagent or an aqueous specimen having as an effective component a mixture of a chain hydrocarbon and a silicone oil immiscible with the aqueous reagent as well methods of using and making the same.

Abstract: A low resistance conductive pigment containing indium oxide crystal grains each including a partial amount of Sn. The amount of Sn ranges from about 1 to about 15 mol % relative to the total amount of Sn and In in each of the indium oxide crystal grains. The conductive pigment further includes a specified surface acidity and a specified volume resistivity. The conductive pigment exhibits improved visibility and averages a primary particle size of up to 0.2 .mu.m,. This allows for the manufacture of superior transparent conductive films which can be useful, inter alia, as a transparent electrode in liquid crystal displays and heating elements having transparent surfaces. In one embodiment, ITO crystals undergo an oxygen extraction treatment, while in another embodiment, surface acidity, is increased by a surface modification treatment. The methods of forming conductive pigments, conductive film forming compositions and conductive resin forming compositions are also disclosed.

Abstract: An infrared-ray cutoff material having a structure in which tin-doped indium oxide powder (ITO) powder is dispersed in an inorganic or organic matrix. The material can be in the form of a coating on a substrate available by applying a composition comprising ITO powder, a binder (an organic resin and/or a metal alkoxide) and a solvent (an organic solvent, water and/or alcohol) onto the substrate and drying the same. It may also be in the form of a film, a sheet, a fiber or other shape available by forming a composition made by dispersing ITO powder in an organic polymer. The ITO powder should preferably have an x-value of from 0.220 to 0.295 and a y-value of from 0.235 to 0.352 on the xy chromaticity scale, a lattice constant of from 10.110 to 10.160 .ANG., and a minimum cutoff wavelength of up to 1,000 nm. The infrared-ray cutoff material of the present invention is transparent within the visible region and can totally cut off infrared rays of wavelengths ranging from relatively shorter ones.