Abstract: A shake amount acquisition apparatus includes a first acquisition unit configured to acquire a shake detection result from a shake detection unit that is configured to detect a shake and is provided in a rotation portion driven to rotate with respect to a base, a second acquisition unit configured to acquire a drive velocity of the rotation portion, and a reference value calculation unit configured to calculate a reference value of the shake detection unit based on the shake detection result and the drive velocity.

Abstract: A semiconductor device includes a semiconductor substrate; at least one transistor located on the semiconductor substrate and including a plurality of semiconductor layers; an electrode provided for the transistor; an organic insulating film having an opening in a region overlapping the transistor and the electrode in plan view in a first direction perpendicular to the semiconductor substrate; and a bump located over the at least one transistor in plan view in the first direction and electrically connected to the electrode through the opening of the organic insulating film. The width of the bump in a second direction parallel to the semiconductor substrate is smaller than the width of the opening of the organic insulating film in the second direction.

Abstract: A semiconductor device includes a semiconductor substrate, at least one transistor on the semiconductor substrate and including semiconductor layers, a wiring on the transistor, a first insulating film including a first opening in a region overlapping the transistor and the wiring in plan view in a first direction perpendicular to the semiconductor substrate, a first redistribution layer on the first insulating film, overlapping the at least one transistor in the first direction in plan view, and electrically connected to the wiring via the first opening, a second insulating film covering the first redistribution layer and the first insulating film and provided with a second opening in a region overlapping at least a part of the first redistribution layer in the first direction in plan view, and a bump electrically connected to the first redistribution layer via the second opening.

Abstract: An optical connector in one embodiment includes an optical fiber, a ferrule assembly, and a housing. The housing has a positioning part defining an accommodation position of the ferrule assembly. The positioning part has an inclined surface with which a part of the ferrule assembly is to contact and the ferrule assembly includes a ferrule, a sleeve, and a flange. The sleeve includes a projection and the flange is disposed between the positioning part and the projection of the sleeve, and has a flange front surface including an edge contacting the inclined surface of the positioning part and a flange rear surface contacting or being close to the projection of the sleeve.

Abstract: An optical connector of one embodiment includes an optical fiber, a ferrule assembly, and a housing provided with a positioning part on an inner wall surface for suppressing a fluctuation in an aligning state of the optical fiber with respect to the housing. The positioning part includes an inclined surface and a facing surface which contact a part of the ferrule assembly. The ferrule assembly includes a ferrule, and a sleeve member. The sleeve member is constituted by a sleeve and a flange which has edges contacting the inclined surface and the facing surface respectively. Of an outer peripheral portion of the flange, a portion including the edges facing at least one of the inclined surface and the facing surface includes a set including a deformation absorbing part and two contact portions disposed on both sides of the deformation absorbing part.

Abstract: A capacitor including a lower layer electrode, a dielectric film, and an upper layer electrode sequentially laminated on a partial area of an upper surface serving as one surface of a substrate formed from a compound semiconductor from a side closest to the substrate is disposed. A coating formed from an insulating metal oxide or a silicon oxide is disposed on or above the dielectric film. When the upper surface is viewed in a plan, the coating extends throughout an edge of the lower layer electrode from an area inside the edge of the lower layer electrode to an area outside the edge.

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

Abstract: A mesa portion is formed on a substrate. An insulating film including an organic layer is disposed on the mesa portion. A conductor film is disposed on the insulating film. A cavity provided in the organic layer has side surfaces extending in a first direction. A shorter distance out of distances in a second direction perpendicular to the first direction from the mesa portion to the side surfaces of the cavity in plan view is defined as a first distance. A shorter distance out of distances in the first direction from the mesa portion to side surfaces of the cavity in plan view is defined as a second distance. A height of a first step of the mesa portion is defined as a first height. At least one of the first distance and the second distance is greater than or equal to the first height.

Abstract: An optical wiring includes a plurality of first set groups each including a plurality of first connecting components, a plurality of second set groups each including a plurality of second connecting components, and a receptacle which has a first end face and a second end face on an opposite side of the first end face. The first set groups are connected to the first end face side and the second set groups are connected to the second end face side. The first set groups faces the second set groups through the receptacle such that a direction in which the first connecting components are arranged and a direction in which the second connecting components are arranged are perpendicular to each other, and each of the first connecting components is optically connected to a corresponding one of the second connecting components in the receptacle.

Abstract: A first layer conductor film is connected to an operation electrode through an opening in a first layer interlayer insulating film. An opening in a second layer interlayer insulating film is encompassed by the first layer conductor film in plan view. A second layer conductor film is connected to the first layer conductor film through the opening in a second layer interlayer insulating film. The average, along a first direction, of distances in a second direction, which is perpendicular to the first direction, from the opening in the first layer interlayer insulating film to the side surface of the opening in the second layer interlayer insulating film is greater than or equal to a distance in a height direction from an upper opening plane of the opening in the first layer interlayer insulating film to a lower opening plane of the opening in the second layer interlayer insulating film.

Abstract: A bipolar transistor including a first collector layer, a second collector layer, a base layer, and an emitter layer is disposed on a substrate. Etching characteristics of the second collector layer are different from etching characteristics of the first collector layer and the base layer. In plan view, an edge of an interface between the first collector layer and the second collector layer is disposed inside an edge of a lower surface of the base layer, and an edge of an upper surface of the second collector layer coincides with the edge of the lower surface of the base layer or is disposed inside the edge of the lower surface of the base layer.

Abstract: A circuit element is formed on a substrate made of a compound semiconductor. A bonding pad is disposed on the circuit element so as to at least partially overlap the circuit element. The bonding pad includes a first metal film and a second metal film formed on the first metal film. A metal material of the second metal film has a higher Young's modulus than a metal material of the first metal film.

Abstract: A power amplifier module includes a substrate including, in an upper surface of the substrate, an active region and an element isolation region. The power amplifier module further includes a collector layer, a base layer, and an emitter layer that are stacked on the active region; an interlayer insulating film that covers the collector layer, the base layer, and the emitter layer; a pad that is thermally coupled to the element isolation region; and an emitter bump that is disposed on the interlayer insulating film, electrically connected to the emitter layer through a via hole provided in the interlayer insulating film, and electrically connected to the pad. In plan view, the emitter bump partially overlaps an emitter region which is a region of the emitter layer and through which an emitter current flows.

Abstract: At least one unit transistor is arranged over a substrate. A first wiring as a path of current that flows to each unit transistor is arranged over the at least one unit transistor. An inorganic insulation film is arranged over the first wiring. At least one first opening overlapping a partial region of the first wiring in a plan view is provided in the inorganic insulation film. An organic insulation film is arranged over the inorganic insulation film. A second wiring coupled to the first wiring through the first opening is arranged over the organic insulation film and the inorganic insulation film. In a plan view, a region in which the organic insulation film is not arranged is provided outside a region in which the first wiring is arranged. The second wiring is in contact with the inorganic insulation film outside the region in which the first wiring is arranged.

Abstract: An image processing apparatus that corrects image blurring with respect to image data that has been captured using a lens that forms a subject image which has been compressed in at least one of first and second directions that are orthogonal to an optical axis is disclosed. The apparatus applies geometric transformation processing to the image data based on first information related to a compression ratio of a subject image applied by the lens and on second information related to a rotation angle of the device motion. The geometric transformation processing includes correction processing for rotation transformation of the subject image attributed to the device motion around the optical axis, and shearing processing.

Abstract: A bipolar transistor includes a collector layer, a base layer, and an emitter layer that are formed in this order on a compound semiconductor substrate. The emitter layer is disposed inside an edge of the base layer in plan view. A base electrode is disposed on partial regions of the emitter layer and the base layer so as to extend from an inside of the emitter layer to an outside of the base layer in plan view. An insulating film is disposed between the base electrode and a portion of the base layer, with the portion not overlapping the emitter layer. An alloy layer extends from the base electrode through the emitter layer in a thickness direction and reaches the base layer. The alloy layer contains at least one element constituting the base electrode and elements constituting the emitter layer and the base layer.

Abstract: A mesa portion is formed on a substrate. An insulating film including an organic layer is disposed on the mesa portion. A conductor film is disposed on the insulating film. A cavity provided in the organic layer has side surfaces extending in a first direction. A shorter distance out of distances in a second direction perpendicular to the first direction from the mesa portion to the side surfaces of the cavity in plan view is defined as a first distance. A shorter distance out of distances in the first direction from the mesa portion to side surfaces of the cavity in plan view is defined as a second distance. A height of a first step of the mesa portion is defined as a first height. At least one of the first distance and the second distance is greater than or equal to the first height.

Abstract: A first layer conductor film is connected to an operation electrode through an opening in a first layer interlayer insulating film. An opening in a second layer interlayer insulating film is encompassed by the first layer conductor film in plan view. A second layer conductor film is connected to the first layer conductor film through the opening in a second layer interlayer insulating film. The average, along a first direction, of distances in a second direction, which is perpendicular to the first direction, from the opening in the first layer interlayer insulating film to the side surface of the opening in the second layer interlayer insulating film is greater than or equal to a distance in a height direction from an upper opening plane of the opening in the first layer interlayer insulating film to a lower opening plane of the opening in the second layer interlayer insulating film.