Abstract: An object of the present disclosure is to provide a diagnostic technique capable of determining an anomaly of an exhaust device or an exhaust pipe of a semiconductor manufacturing apparatus while suppressing variations due to processing conditions. In a diagnostic device for diagnosing a state of a semiconductor manufacturing apparatus including: a processing chamber in which a sample is processed; a transfer chamber that is connected to the processing chamber and transfers the sample to the processing chamber; a valve that is disposed between the processing chamber and the transfer chamber; and an exhaust device for exhausting the processing chamber, wherein whether or not there is an anomaly in the exhaust device or an exhaust pipe regarding the exhaust device is determined on the basis of a pressure regarding the exhaust device after the valve is opened.

Abstract: Provided is a plasma processing apparatus capable of obtaining desired etch profiles and preventing the degradation of yield rates due to the adhesion of particles, and equipped with a processing chamber in which a sample is plasma-treated; a radio-frequency power source for supplying radio-frequency power used to generate plasma; a sample stage which is provided with electrodes for electrostatically adsorbing the sample and on which the sample is mounted; and a DC power supply for applying DC voltages to the electrodes, the apparatus being further equipped with a control apparatus for controlling the DC power supply so as to apply such DC voltages as to decrease the absolute value of the potential of the sample in the absence of the plasma.

Abstract: A diagnostic device separates sensor waveform data obtained in each plasma process into components of individuals of a plurality of predefined sensor waveform change types, calculates a deterioration degree indicating a deterioration state of the part for each separated sensor waveform component based on sensor waveform components at a normal time and a diagnosis time or sensor waveform components at a deterioration time and the diagnosis time, diagnoses necessity for the maintenance of a part using the deterioration degree, executes a filtering process on time-series data of the deterioration degree calculated for each plasma process, and sets a threshold used for deterioration diagnosis for each plasma processing apparatus based on a distribution calculated using a plurality of deterioration degrees after the filter processing is performed during a learning interval from time of component maintenance to time after the process is executed a predetermined number of times.

Abstract: A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.

Abstract: The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears.

Abstract: An apparatus diagnostic apparatus that performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a reference chamber to create reference chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters. The apparatus diagnostic apparatus also performs a computation process using data acquired from a semiconductor apparatus manufacturing apparatus having a calibration-target chamber to create calibration-target chamber feature quantity map data by mapping a feature quantity onto a graph having axes representing a plurality of parameters.

Abstract: A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Abstract: An object of the present disclosure is to provide a technique for detecting an anomaly of the surface state of the film of an electrostatic chuck. In a diagnostic device for diagnosing the state of a semiconductor manufacturing device having a sample stage on which a sample electrostatically adsorbed to a film is mounted, temperature data before and after a change of energy applied to the sample is obtained, and an anomaly of the film is detected on the basis of the obtained temperature data.

Abstract: An apparatus diagnostic system for diagnosing conditions of a semiconductor manufacturing apparatus includes an apparatus diagnostic apparatus that outputs soundness indicators by a first algorithm with sensor data collected from the semiconductor manufacturing apparatus as an input to the first algorithm, outputs threshold spatial data under normal conditions of the semiconductor manufacturing apparatus by a second algorithm with the soundness indicators as an input to the second algorithm, and diagnoses conditions of the semiconductor manufacturing apparatus by a third algorithm with the soundness indicators and the threshold spatial data as an input to the third algorithm. The soundness indicators are indicators concerning a degree of soundness of conditions of the semiconductor manufacturing apparatus.

Abstract: An apparatus diagnostic apparatus is configured such that: a time range during which a first time-series signal obtained from a sensor is masked is set; data in which a first time-series signal corresponding to the masked time range is masked is created; a standardized model is created by using the data obtained by masking the first time-series signal; a standardization process is performed on the data in which the first time-series signal is masked by using the standardized model; a normal model is created by using a plurality of pieces of data; masking of a second time-series signal in a masked time range is performed on a second time-series signal obtained from a sensor; a standardization process is performed by using the standardized model; and an anomalous value is calculated from a signal obtained by the standardization process of the second time-series signal.

Abstract: In a multilayer capacitor, when a width of a element body in a facing direction of a pair of side surfaces is W, and a distance from a start position of a curved shape of the element body on the side surface side in a plane of a first internal electrode of an outermost layer to a virtual surface including the side surface when viewed from the facing direction of a pair of end surfaces is Rw, We/4?X<W?2×Rw is satisfied.

Abstract: In a multilayer capacitor, when a distance between a surface of a first external electrode at an apex position of the first external electrode and a curved surface is defined as Ht, and a distance between the apex position and an apex position of the main surface in a facing direction of the pair of main surfaces is defined as Y, 0<Y<Ht is satisfied for each of the pair of first external electrodes at least on the curved surface side, and a distance between a surface of the second external electrode at an apex position of the second external electrode and the main surface is defined as Hs, Ht>Hs is satisfied for each of the pair of second external electrodes on both sides of the pair of main surfaces.

Abstract: A system that predicts an apparatus state of a plasma processing apparatus including a processing chamber in which a sample is processed is configured to have a data recording unit that records emission data of plasma during processing of the sample and electrical signal data obtained from the apparatus during the plasma processing, an arithmetic unit that includes a first calculation unit for calculating a first soundness index value of the plasma processing apparatus and a first threshold for an abnormality determination using a first algorithm with respect to the recorded emission data and a second calculation unit for calculating a second soundness index value of the plasma processing apparatus and a second threshold for the abnormality determination using a second algorithm with respect to the electrical signal data recorded in the data recording unit, and a determination unit that determines soundness of the plasma processing apparatus using the calculated first soundness index value and the first thres

Abstract: Provided is a state prediction apparatus that predicts a state of the plasma processing apparatus, a first set of features that indicates the state of the plasma processing apparatus is determined based on monitored data of the plasma processing apparatus in a normal state, a second set of features that indicates the state of the plasma processing apparatus is determined based on monitored data of the plasma processing apparatus, the features in the second set are calculated by using the features in the first set, a model that predicts the state of the plasma processing apparatus is generated by using a subset of the first set of features, which is composed of the same kind of features selected in descending order of the calculated features in the second set, and the state of the plasma processing apparatus is predicted by using the generated model.

Abstract: In a diagnosis apparatus for diagnosing a state of a plasma processing apparatus, prior distribution information including a probability distribution function is previously obtained for each of first sensors by using first sensor values obtained by the first sensors in a first plasma processing apparatus, a probability distribution in each of second sensors corresponding to each of the first sensors is estimated based on the previously obtained prior distribution information and second sensor values obtained by the second sensors in a second plasma processing apparatus different from the first plasma processing apparatus, and a state of the second plasma processing apparatus is diagnosed by using the estimated probability distribution.

Abstract: A diagnosis device that uses information from state sensors provided in a plasma processing apparatus for plasma processing a specimen to diagnose deterioration states of components configuring the plasma processing apparatus includes an execution unit that computes and calculates deterioration degree of each of the components configuring the plasma processing apparatus on the basis of the information from the state sensors, and an analysis unit that sets a computation condition for computing and calculating the deterioration degree by the execution unit on the basis of the information from the state sensors and calculates a maintenance period of the plasma processing apparatus on the basis of the information of the deterioration degree of each of the components configuring the plasma processing apparatus computed and calculated by the execution unit, and makes it possible to decide deterioration degree computation condition having high robustness for each of the components.

Abstract: The present invention provides a plasma processing method for subjecting a sample on which a metal element-containing film is disposed to plasma etching in a processing chamber. The method comprises: subjecting an inside of the processing chamber to plasma cleaning using a boron element-containing gas; removing the boron element using plasma after the plasma cleaning; subjecting the inside of the processing chamber to plasma cleaning using a fluorine element-containing gas after removing the boron element; depositing a deposited film in the processing chamber by plasma using a silicon element-containing gas after the plasma cleaning using the fluorine element-containing gas; and subjecting the sample to plasma etching after depositing the deposited film.

Abstract: A plasma processing apparatus includes: a processing chamber disposed inside a vacuum container and in which plasma is formed; and a member which is a member forming an inner wall surface of the processing chamber and is disposed on a surface to be exposed to the plasma and has a coating film formed by spraying of yttrium fluoride or a material containing the yttrium fluoride. A ratio of an orthorhombic crystal of the yttrium fluoride or the material containing the yttrium fluoride forming the coating film relative to the entirety is 60% or more.

Abstract: A sample releasing method for releasing a sample subjected to plasma processing from a sample stage on which the sample is electrostatically attracted by applying DC voltage to an electrostatic chuck electrode, and the method includes: moving the sample subjected to the plasma processing upward above the sample stage; and after moving the sample, controlling the DC voltage such that an electric potential of the sample is to be smaller.

Abstract: To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.