Abstract: In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.

Abstract: An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

Abstract: A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.

Abstract: A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, and a groove portion provided on a main surface of the target object and defined by the first protrusion portion and the second protrusion portion and an inner surface of the groove portion is included in the main surface of the target object. The method comprises forming a protection film conformally on the main surface of the target object after the forming of the protection film conformally, repeatedly performing a plasma etching on a bottom portion of the groove portion of the target object and performing the forming of the protection film and the performing of the plasma etching N times (N is an integer equal to or larger than 2). The protection film is formed depending on a shape of the groove portion which has been changed by the plasma etching.

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

Abstract: An etching method of etching a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The etching method includes a first process of forming a film on the end surface of each protrusion region; a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process; and a third process of anisotropically etching the one or more end surfaces exposed through the second process atomic layer by atomic layer. The processing target layer contains silicon nitride, and the film contains silicon oxide.

Abstract: A method of processing a target object is provided. In the method, the target object including a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion, the etching target layer having a region belonging to the first protrusion portion and a region belonging to the second protrusion portion, the groove portion being provided on a main surface of the target object, being provided on the etching target layer and being defined by the first protrusion portion and the second protrusion portion, and an inner surface of the groove portion being included in the main surface of the target object is prepared, and a first sequence is repeatedly performed N times (N is an integer equal to or larger than 2). The first sequence includes (a) forming a protection film conformally on the main surface; and (b) etching a bottom portion of the groove portion with plasma of a gas generated after the process a is performed.

Abstract: An embodiment of the present disclosure provides a method of processing a workpiece in which a plurality of holes are formed on a surface of the workpiece. The method includes a first sequence including a first process of forming a film with respect to an inner surface of each of the holes and a second process of isotropically etching the film. The first process includes a film forming process using a plasma CVD method, and the film contains silicon.

Abstract: Based on the fact that a film thickness of a film formed in a film formation processing of repeatedly performing a first sequence varies according to a temperature of the surface on which the film is to be formed, the film formation processing is performed after the temperature of each region of the surface of the wafer is adjusted to reduce a deviation of a trench on the surface of the wafer, so that the film is very precisely formed on the inner surface of the trench while reducing the deviation of the trench on the surface of the wafer. When the trench width is narrower than a reference width, an etching processing of repeatedly performing a second sequence is performed in order to expand the trench width, so that the surface of the film provided in the inner surface of the trench is isotropically and uniformly etched.

Abstract: A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion. The groove portion is provided on a main surface of the target object, provided on the etching target layer and defined by the first and the second protrusion portions. An inner surface of the groove portion is included in the main surface. In the method, a first sequence is repeatedly performed N times (N is an integer equal to or larger than 2). The first sequence includes (a) forming a protection film conformally on the main surface in a processing vessel of a plasma processing apparatus in which the target object is accommodated; and (b) etching a bottom portion of the groove portion with plasma of a gas generated within the processing vessel after the process a is performed.

Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

Abstract: An etching method of etching a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The etching method includes a first process of forming a film on the end surface of each protrusion region; a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process; and a third process of anisotropically etching the one or more end surfaces exposed through the second process atomic layer by atomic layer. The processing target layer contains silicon nitride, and the film contains silicon oxide.

Abstract: A method includes anisotropically etching an etching target layer of a target object through an opening of the target object by generating plasma of a first gas within a processing vessel in which the target object is accommodated; and then forming a film on an inner surface of the opening by repeating a sequence comprising: a first process of supplying a second gas into the processing vessel; a second process of purging a space within the processing vessel; a third process of generating plasma of a third gas containing an oxygen atom within the processing vessel; and a fourth process of purging the space within the processing vessel. The first gas contains a carbon atom and a fluorine atom. The second gas contains an aminosilane-based gas. The etching target layer is a hydrophilic insulating layer containing silicon. Plasma of the first gas is not generated in the first process.

Abstract: A technique regarding film formation capable of forming a three-dimensional pattern successfully is provided. A film forming method for a processing target object is provided. The processing target object has a supporting base body and a processing target layer. The processing target layer is provided on a main surface of the supporting base body and includes protrusion regions. Each protrusion region is extended upwards from the main surface, and an end surface of each protrusion region is exposed when viewed from above the main surface. The film forming method includes a first process of forming a film on the end surface of each protrusion region; and a second process of selectively exposing one or more end surfaces by anisotropically etching the film formed through the first process.

Abstract: A semiconductor manufacturing method includes a first process of etching an insulating film over a conductive layer of an object into a pattern of a mask, and exposing the conductive layer to a recessed portion formed in the insulating film, and a second process of forming an organic film in the recessed portion of the insulating film to which the conductive layer is exposed, the second process including, maintaining a chamber at a predetermined pressure, cooling a stage to ?20° C. or less, and placing the object on the stage, supplying a gas including a gas containing a low vapor pressure material to the chamber, and generating plasma from the gas including the gas containing the low vapor pressure material, and causing precursors generated from the low vapor pressure material and included in the plasma to be deposited in the recessed portion such that the organic film is formed.

Abstract: Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.

Abstract: A method of processing a target object is provided. The target object includes a first protrusion portion, a second protrusion portion, an etching target layer and a groove portion. The groove portion is provided on a main surface of the target object, provided on the etching target layer and defined by the first and the second protrusion portions. An inner surface of the groove portion is included in the main surface. In the method, a first sequence is repeatedly performed N times (N is an integer equal to or larger than 2). The first sequence includes (a) forming a protection film conformally on the main surface in a processing vessel of a plasma processing apparatus in which the target object is accommodated; and (b) etching a bottom portion of the groove portion with plasma of a gas generated within the processing vessel after the process a is performed.

Abstract: A method for selectively etching a first region of silicon oxide with respect to a second region of silicon nitride, includes: preparing a target object including the first region and the second region in a processing chamber of a plasma processing apparatus; and generating a plasma of a processing gas containing a fluorocarbon gas and a rare gas in the processing chamber. In the generating the plasma of the processing gas, a self-bias potential of a lower electrode on which the target object is mounted is greater than or equal to 4V and smaller than or equal to 350V and a flow rate of the rare gas in the processing gas is 250 to 5000 times of a flow rate of the fluorocarbon gas in the processing gas.