Abstract: According to one embodiment, a control device controls a welding device performing resistance welding. When an inspection value satisfies a first condition, the control device modifies a setting value for the resistance welding and causes the welding device to perform the resistance welding. The inspection value is obtained by an inspection of a weld zone formed by the resistance welding. The control device does not cause the welding device to perform the resistance welding when the inspection value satisfies a second condition.

Abstract: A control system, a control method, and a program that interact with a user with regard to correction of handwritten input information are provided. A control system determines an operation to be performed by a robot based on handwritten input information input to an interface and controls the operation performed by the robot. The control system includes: a handwritten input information reception unit that receives an input of the handwritten input information; a determination unit that determines whether or not the handwritten input information needs to be corrected based on feasibility or efficiency of the operation to be performed based on the handwritten input information; and a presentation unit that presents information about the correction of the handwritten input information to a user when the handwritten input information needs to be corrected.

Abstract: A control system, a control method, and a program for causing a robot to perform a plurality of types of operations using handwritten input information are provided. A control system causes a robot to perform an operation based on handwritten input information input to an interface. The control system includes: a handwritten input information reception unit that displays a captured image obtained by capturing an environment in which the robot is located and receives an input of the handwritten input information to the displayed captured image; and a switching unit that switches a plurality of input modes of the handwritten input information for causing the robot to perform different types of operations.

Abstract: According to one embodiment, a measuring chip includes a chip body, an aspiration port, a plurality of terminals, and an attaching portion. The chip body accommodates a sample or a mixture liquid obtained by mixing a reagent that reacts with the sample or a diluent that dilutes the sample with the sample. The aspiration port is provided in the chip body and aspirate the sample or the mixture liquid. The plurality of terminals is provided in the chip body and measure a concentration of a target substance in the sample or the mixture liquid aspirated from the aspiration port. The attaching portion attaches the chip body to a transporter of an automatic analyzing apparatus.

Abstract: A control device include a memory and a processor coupled to the memory. The processor is configured to acquire state information related to an approach state toward a driver's vehicle of another vehicle approaching the driver's vehicle from behind, and based on the acquired state information, prohibit notification by a notification section in a case in which a notification condition has been established for notifying an approach of the other vehicle toward the driver's vehicle to an occupant of the driver's vehicle through the notification section and also the other vehicle is the same as a vehicle notified as approaching toward the driver's vehicle immediately previously.

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

Abstract: Provided is a method for manufacturing a bumper reinforcement in which bonding process time is short and open time is long. A method for manufacturing a bumper reinforcement of one embodiment includes: a pre-bonding step of preparing a layered body containing, in the following order, a metal member, which is a body section, a solid adhesive mainly comprising an amorphous thermoplastic resin that is at least one of a thermoplastic epoxy resin and a phenoxy resin, and a resin member, which is a resin reinforcement; and a bonding step of heating and pressurizing the layered body to melt the solid adhesive, and bonding the metal member and the resin member. Either the epoxy equivalent of the amorphous thermoplastic resin is 1,600 or more or the amorphous thermoplastic resin does not contain epoxy groups, and the heat of fusion of the amorphous thermoplastic resin is 15 J/g or less.

Abstract: Apparatus, system, and method are disclosed for cell recovery or cell separation. A cell separation system has at least a first container having a first filter for separating a first removal target from a suspension comprising cells and a removal target including at least the first removal target and a second removal target; a cell separation apparatus; a first flow path connecting the first container and the cell separation apparatus; and a first pump interposed in the first flow path for transferring the suspension from the first container to the cell separation apparatus by decompression suction, for example.

Abstract: An electronic control device includes: a circuit board configured to be provided in a frame and to have a communication circuit capable of receiving or transmitting differential signals via a pair of signal pins; a connector configured to be electrically connected to the circuit board and to input signals transmitted from an electronic device outside the frame by single-end transmission to the communication circuit; and a noise cancellation signal output circuit configured to output noise cancellation signals corresponding to noise superimposed on the signals in the connector, wherein one signal pin of the pair of signal pins of the communication circuit is connected to the connector, and the other signal pin is connected to the noise cancellation signal output circuit.

Abstract: A semiconductor storage device includes a memory cell including a core portion that extends in a first direction above a semiconductor substrate; a variable resistance layer that extends in the first direction and is in contact with the core portion; a semiconductor layer that extends in the first direction and is in contact with the variable resistance layer; a first insulator layer that extends in the first direction and is in contact with the semiconductor layer; and a first voltage applying electrode that extends in a second direction orthogonal to the first direction and is in contact with the first insulator layer. The core portion is a vacuum region, or a region containing inert gas.

Abstract: A semiconductor device with a high on-state current is provided. A transistor included in the semiconductor device includes a first insulator; a first semiconductor layer over the first insulator; a second semiconductor layer including a channel formation region over the first semiconductor layer; a first conductor and a second conductor over the second semiconductor layer; a second insulator over the second semiconductor layer and between the first conductor and the second conductor; and a third conductor over the second insulator. In a cross-sectional view in a channel width direction of the transistor, the third conductor covers a side surface and a top surface of the second semiconductor layer. The second semiconductor layer has a higher permittivity than the first semiconductor layer.

Abstract: The present disclosure relates to a sealing device and a construction machine. The seal device includes a first member, a second member, a seal ring, and an elastic ring. The first member has an inner circumferential surface. The second member rotates relative to the first member. The second member faces the first member in a rotation axis direction. The seal ring has an outer circumferential surface facing the inner circumferential surface in a radial direction and spaced apart from the inner circumferential surface. The seal ring has a sealing surface in sliding contact with the second member. An elastically deformable elastic ring is disposed between the inner circumferential surface of the first member and the outer circumferential surface of the seal ring. The elastic ring presses the seal surface of the seal ring against the second member to seal between the seal surface and the second member.

Abstract: A sheet processing apparatus includes a center folder, a back-crimp binder, and circuitry. The center folder performs a center-folding process to form a fold portion on a sheet bundle including multiple sheets. The back-crimp binder includes a back-portion former and a crimp binder. The back-portion former forms a back portion of the fold portion on the sheet bundle subjected to the center-folding process. The crimp binder performs a crimp-binding process on the back portion of the sheet bundle subjected to the center-folding process. The circuitry is to cause the back-crimp binder to form a crimp mark parallel to the fold portion on the back portion of the sheet bundle.

Abstract: A sheet processing apparatus includes: a center-folder to perform a center-folding process on a sheet bundle including multiple sheet materials; a back-crimp binder to: form a back portion on the sheet bundle subjected to the center-folding process; and perform a crimp-binding process on the back portion; and a controller configured to: cause the center-folder to perform the center-folding process; and cause the back-crimp binder to perform the crimp-binding process on the back portion while forming the back portion on the sheet bundle in the crimp-binding process.

Abstract: The present invention provides: a nonaqueous electrolyte solution which is used in a nonaqueous electrolyte battery having a low initial resistance value; and a compound which is contained in this nonaqueous electrolyte solution. A nonaqueous electrolyte solution according to the present invention contains a compound represented by formula (1), a solute and a nonaqueous organic solvent. In general formula (1), each of R1 and R2 represents PO(Rf)2 or SO2Rf, and Rf represents, for example, a fluorine atom; each of R3 and R4 represents, for example, a lithium ion, or alternatively R3 and R4 may form a ring structure together with a nitrogen atom to which the moieties are bonded, and in this case, R3 and R4 form an alkylene group in combination with each other; an oxygen atom may be contained between carbon atom-carbon atom bonds in the alkylene group; a side chain thereof may have an alkyl group; and an arbitrary hydrogen atom in the alkyl group and the alkylene group may be substituted by a fluorine atom.

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1??O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

Abstract: In an information processing method performed by a computer (200) comprises: displaying plan information, the plan information representing a future plan and being generated based on basic information on a user and an ideal plan of the user in consultation on the future plan of the user through a voice interaction; and correcting the future plan and updating the plan information in accordance with information on reaction of the user to the plan information that has been displayed.

Abstract: The present invention relates to a drive device and a method of controlling the drive device. The drive device according to the invention includes a first member, a second member, an electric actuator, and a damper. The damper is configured to drive in an enabled mode and a disabled mode, the enabled mode enables a function of mitigating an impact load applied to either one of the first member and the second member, and the disabled mode disables the function of mitigating an impact load applied to either one of the first member and the second member.

Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

Abstract: A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.