Patents by Inventor Masahiro Takahashi

Masahiro Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190272658
    Abstract: It is intended to easily generate an edited image from which various and natural feelings are obtained. Depth information of pixels in an image which is set as a processing object is used therefor. Reference depth information serving as a comparison reference for the depth information of pixels in image processing is set. In addition, an image editing process is performed using the reference depth information and the depth information of the pixels of the image which is set as the processing object.
    Type: Application
    Filed: September 25, 2017
    Publication date: September 5, 2019
    Inventors: MASAHIRO TAKAHASHI, TAKAHIRO TSUGE, HIDENORI KARASAWA, HIROMI IIZUKA, RYO MIYAKE, HIROSHI NAKAYAMA
  • Patent number: 10403839
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: October 31, 2016
    Date of Patent: September 3, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Patent number: 10403763
    Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: September 3, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kengo Akimoto, Junichiro Sakata, Takuya Hirohashi, Masahiro Takahashi, Hideyuki Kishida, Akiharu Miyanaga
  • Patent number: 10396348
    Abstract: The present invention is directed to a negative electrode material for a non-aqueous electrolyte secondary battery, including a conductive powder composed of silicon-based active material particles coated with a conductive carbon film, in which the conductive carbon film exhibits a d-band having a peak half width of 100 cm?1 or more as determined from a Raman spectrum of the conductive carbon film. The invention provides a negative electrode material for a non-aqueous electrolyte secondary battery that has excellent cycle performance and keeps high charge and discharge capacity due to use of a silicon-based active material, a method of producing the negative electrode material for a non-aqueous electrolyte secondary battery, and a non-aqueous electrolyte secondary battery.
    Type: Grant
    Filed: January 20, 2015
    Date of Patent: August 27, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Masahiro Furuya, Kohta Takahashi, Hiroki Yoshikawa, Hiromichi Kamo, Takakazu Hirose
  • Patent number: 10392075
    Abstract: Provided is an inverted pendulum type vehicle including a drive wheel and a boarding part on which a rider rides in a standing position, the inverted pendulum type vehicle including: a detection unit configured to detect a drive torque of the drive wheel to maintain an inverted state; and an output unit configured to generate torque information about an ankle torque based on the drive torque detected by the detection unit and output the generated torque information, the ankle torque being applied to the boarding part by the rider.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: August 27, 2019
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Nobuhisa Otsuki, Masahiro Takahashi
  • Patent number: 10393649
    Abstract: A THz bolometer detector includes a directional antenna 1 that receives a THz wave having a wavelength ? and radiates the received THz wave, a reception antenna 2 that is provided so as to face the directional antenna 1, and a bolometer 4 that detects heat generation due to a current flowing in the reception antenna 2. The directional antenna 1 overlaps the reception antenna 2 in plan view, and a longitudinal length of the directional antenna 1 is set to be less than a longitudinal length of the reception antenna 2.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: August 27, 2019
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Ryusuke Kitaura, Masatoshi Ishihara, Masahiro Yamazaki, Hironori Takahashi
  • Patent number: 10396353
    Abstract: A negative electrode active material for a non-aqueous electrolyte secondary battery, including negative electrode active material particles containing a silicon compound (SiOx where 0.5?x?1.6), the negative electrode active material particles being coated with a carbon coating composed of a substance at least partially containing carbon, the carbon coating having a density ranging from 1.2 g/cm3 to 1.9 g/cm3, the negative electrode active material particles having a characteristic of type II or type III adsorption-desorption isotherm in the IUPAC classification, as obtained by adsorption-desorption isotherm measurement with nitrogen gas. This negative electrode active material can increase the battery capacity and improve the cycle performance and battery initial efficiency.
    Type: Grant
    Filed: July 30, 2015
    Date of Patent: August 27, 2019
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Hiromichi Kamo, Kohta Takahashi, Takakazu Hirose, Koichiro Watanabe, Masahiro Furuya, Hiroki Yoshikawa
  • Publication number: 20190249621
    Abstract: A purge system malfunction diagnosis device is configured to diagnose a malfunction in a purge system mounted on a vehicle. The purge system includes a canister, a purge passage, a purge valve capable of opening and closing the purge passage, an outside air passage configured to cause the canister to communicate with an outside air opening, an outside air valve capable of opening and closing the outside air passage, and a system pressure sensor configured to detect a pressure in the purge system. In a state where the outside air passage is closed, a diagnosis mode is executed on a basis of a relationship between the pressure in the purge system and an integrated value of flow rate estimates of a purge gas. In the diagnosis mode, a parameter to be used for diagnosing a malfunction in the purge system is adjusted in a case where the flow rate estimate is lower than a flow rate threshold.
    Type: Application
    Filed: January 7, 2019
    Publication date: August 15, 2019
    Applicant: SUBARU CORPORATION
    Inventors: Daisuke KUGO, Masahiro ONO, Naoki MATSUMOTO, Kazunori Takahashi
  • Patent number: 10378086
    Abstract: The present invention is a sliding contact material having a composition of Cu of 6.0% by mass or more and 9.0% by mass or less, Ni of 0.1% by mass or more and 2.0% by mass or less, an additive element M of 0.1% by mass or more and 0.8% by mass or less, and the balance being Ag. The additive element M is at least one element selected from the group consisting of Sm, La and Zr. The present sliding contact material has a material structure in which dispersion particles containing an intermetallic compound containing at least both Ni and an additive element M are dispersed in an Ag alloy matrix. It is required that the ratio of a Ni content (% by mass) and a content of an additive element M (% by mass) (KNi/KM) in the dispersion particles falls within a predetermined range. The present invention is an Ag alloy-based sliding contact material more excellent also in abrasion resistance than conventional ones, and a material adaptable to higher rotation numbers of micromotors.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: August 13, 2019
    Assignee: TANAKA KIKINZOKU KOGYO K.K.
    Inventors: Takao Asada, Takumi Niitsuma, Masahiro Takahashi, Terumasa Tsuruta
  • Patent number: 10370506
    Abstract: Provided are a carbon fiber thermoplastic resin prepreg which is a carbon fiber prepreg obtained by impregnating a PAN-based carbon fiber in which the average fiber fineness of a single fiber is 1.0 dtex to 2.4 dtex with a thermoplastic resin, wherein the thermoplastic resin satisfies 20?(FM/FS)?40 (where FM: flexural modulus (MPa) of a resin sheet comprising only the thermoplastic resin, and FS: flexural strength (MPa) of the resin sheet), a method for manufacturing the same, and a carbon fiber composite material employing the carbon fiber prepreg.
    Type: Grant
    Filed: March 29, 2013
    Date of Patent: August 6, 2019
    Assignee: MITSUBISHI CHEMICAL CORPORATION
    Inventors: Masao Tomioka, Takahiro Hayashi, Saki Fujita, Takeshi Ishikawa, Keigo Yoshida, Takuya Teranishi, Atsushi Takahashi, Kenichi Watanabe, Morio Katagiri, Akinobu Sasaki, Masahiro Oosuka, Hiroshi Tategaki, Takayuki Kobayashi
  • Patent number: 10374030
    Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.
    Type: Grant
    Filed: August 25, 2017
    Date of Patent: August 6, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Takahashi, Takuya Hirohashi, Masashi Tsubuku, Masashi Oota
  • Patent number: 10370507
    Abstract: Provided are a carbon fiber thermoplastic resin prepreg which is a carbon fiber prepreg obtained by impregnating a PAN-based carbon fiber in which the average fiber fineness of a single fiber is 1.0 dtex to 2.4 dtex with a thermoplastic resin, wherein the thermoplastic resin satisfies 20?(FM/FS)?40 (where FM: flexural modulus (MPa) of a resin sheet comprising only the thermoplastic resin, and FS: flexural strength (MPa) of the resin sheet), a method for manufacturing the same, and a carbon fiber composite material employing the carbon fiber prepreg.
    Type: Grant
    Filed: April 27, 2017
    Date of Patent: August 6, 2019
    Assignee: Mistubishi Chemical Corporation
    Inventors: Masao Tomioka, Takahiro Hayashi, Saki Fujita, Takeshi Ishikawa, Keigo Yoshida, Takuya Teranishi, Atsushi Takahashi, Kenichi Watanabe, Morio Katagiri, Akinobu Sasaki, Masahiro Oosuka, Hiroshi Tategaki, Takayuki Kobayashi
  • Patent number: 10370757
    Abstract: A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.
    Type: Grant
    Filed: January 28, 2014
    Date of Patent: August 6, 2019
    Assignee: ULVAC, INC.
    Inventors: Tetsushi Fujinaga, Masahiro Matsumoto, Makoto Arai, Eriko Mase, Harunori Iwai, Koji Takahashi, Atsuhito Ihori
  • Publication number: 20190233048
    Abstract: A brake control device includes an electronic controller that is configured to control a braking unit that is configured to brake at least one of a plurality of rotating bodies of a human-powered vehicle. The electronic controller is configured to control the braking unit upon determining an ABS control is performed to decrease a braking force of a first rotating body included in the plurality of rotating bodies so that a braking force of a second rotating body, which is different from the first rotating body and included in the plurality of rotating bodies, is increased by a force that is different from hydraulic pressure.
    Type: Application
    Filed: January 23, 2019
    Publication date: August 1, 2019
    Inventors: Hitoshi TAKAYAMA, Masahiko FUKUDA, Toshihiko TAKAHASHI, Daisuke NAGO, Masahiro NAKAKURA, Takafumi NISHINO, Takehiko NAKAJIMA
  • Publication number: 20190233049
    Abstract: A brake control device includes an electronic controller that executes an ABS control on a rotating body of a human-powered vehicle. The electronic controller executes the ABS control based on a relationship between a first speed and a second speed related to the human-powered vehicle. The first speed includes a speed of the human-powered vehicle based on information of a traveling environment. The second speed includes a speed of the human-powered vehicle based on a rotational speed of the rotating body.
    Type: Application
    Filed: January 23, 2019
    Publication date: August 1, 2019
    Inventors: Masahiko FUKUDA, Toshihiko TAKAHASHI, Hitoshi TAKAYAMA, Masahiro NAKAKURA, Takehiko NAKAJIMA
  • Patent number: 10364866
    Abstract: A gear device is provided with a carrier having a first member and a second member opposed to the first member in a rotation axis direction, a crankshaft configured to cause the carrier to rotate relative to an outer cylinder about a rotation axis, an insertion pin inserted into the first member and the second member, and a restriction member configured to restrict movement of the insertion pin. The insertion pin is housed in such a manner as to extend from a first hole over to a second hole, the first hole formed in the first member so as to extend through the first member, the second hole formed in the second member so as to correspond to the first hole. At least one of the first hole and the second hole has such a shape as to restrict movement of the insertion pin toward the second hole in the rotation axis direction. The restriction member is mounted in the first member so as to restrict movement of the insertion pin toward the first hole in the rotation axis direction.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: July 30, 2019
    Assignee: NABTESCO CORPORATION
    Inventors: Masahiro Takahashi, Yuto Nakai, Koji Nakamura
  • Publication number: 20190225298
    Abstract: A brake control device includes an electronic controller that controls a brake unit configured to brake a rotation body of a human-powered vehicle. The electronic controller limits ABS control in a case where a first predetermined condition for executing ABS control and a second predetermined condition for limiting ABS control are satisfied. The second predetermined condition is set based on limitation information that differs from information related to a traveling speed of the human-powered vehicle.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 25, 2019
    Inventors: Toshihiko TAKAHASHI, Masahiko FUKUDA, Hitoshi TAKAYAMA, Daisuke NAGO, Masahiro NAKAKURA, Takehiko NAKAJIMA
  • Patent number: 10358008
    Abstract: A suspension coil spring includes a lower end turn portion, an upper end turn portion, and a helical effective portion formed between the end turn portions. The lower end turn portion includes a first portion which contacts a lower spring seat irrespective of a load, and a second portion which contacts the lower spring seat or is separated from the same according to the load. The wire diameter of the second portion is greater than that of the first portion and an average wire diameter of the effective portion. The upper end turn portion includes a third portion which contacts an upper spring seat, and a fourth portion. The wire diameter of the fourth portion is greater that of the third portion and the average wire diameter of the effective portion.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: July 23, 2019
    Assignee: NHK SPRING CO., LTD.
    Inventors: Kenji Yamamotoya, Hideto Enomoto, Ken Takahashi, Toshiaki Sato, Mitsuhiro Sugiyama, Yoshio Kobayashi, Taichi Inage, Tomotake Kato, Akihiko Nishikawa, Masahiro Umezawa, Michihiko Ayada, Suguru Kajigaya
  • Publication number: 20190221344
    Abstract: A ferrite sintered body of the invention includes; a main component including 48.65 to 49.45 mol % of iron oxide in terms of Fe2O3, 2 to 16 mol % of copper oxide in terms of CuO, 28.00 to 33.00 mol % of zinc oxide in terms of ZnO, and a balance including nickel oxide, and a subcomponent including boron oxide in an amount of 5 to 100 ppm in terms of B2O3 with respect to 100 parts by weight of the main component, in which the ferrite sintered body includes crystal grains having an average crystal grain size of 2 to 30 ?m.
    Type: Application
    Filed: December 28, 2018
    Publication date: July 18, 2019
    Applicant: TDK CORPORATION
    Inventors: Takeshi SHIBAYAMA, Yukio TAKAHASHI, Takashi SUZUKI, Hiroyuki TANOUE, Masashi SHIMOYASU, Masahiro KATO
  • Patent number: 10355136
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: July 16, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Motoki Nakashima, Masahiro Takahashi, Shunsuke Adachi, Takuya Hirohashi