Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract: A vehicle periphery monitoring apparatus includes a camera, an electronic control unit and a display unit configured to display the display image. The ECU is configured to generate a display image of an external environment based on image information from the camera such that the display image includes a first display image from a first predetermined viewpoint from which one of right and left side surfaces of a host vehicle and a rear portion or a front portion of the host vehicle are obliquely seen from above. The ECU is configured to generate and output the display image including the first display image in at least any one of a predetermined first traveling status of the host vehicle, a predetermined periphery status of the area on either side of the host vehicle, and a state in which a turn signal lever is manipulated.

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).

Abstract: A training system includes: an inverted-pendulum mobile body including a drive wheel and a riding portion on which a rider rides in a standing position; a first detecting unit configured to detect a driving torque that is applied to the drive wheel to maintain the inverted-pendulum mobile body in an inverted state; a second detecting unit configured to detect a load applied by the rider to an assisting support portion configured to assist the rider in maintaining a balance; and an output unit configured to generate torque information about an ankle-joint torque applied by the rider to the riding portion, based on the driving torque detected by the first detecting unit and the load detected by the second detecting unit, and configured to output the torque information.

Abstract: A highly effective positive electrode is obtained by using a material such as Na which is an inexpensive abundant resource. A positive electrode active material of sodium transition metal phosphate of olivine structure in which the sodium transition metal phosphate of olivine structure includes, a phosphorus atom that is located at the center of a tetrahedron having an oxygen atom in each vertex, a transition metal atom that is located at the center of a first octahedron having an oxygen atom in each vertex; and a sodium atom that is located at the center of a second octahedron having an oxygen atom in each vertex, and adjacent sodium atoms are arranged one-dimensionally in a <010> direction.

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nm? and less than or equal to 10 n?.

Abstract: Positive electrode active material particles that inhibit a decrease in capacity due to charge and discharge cycles are provided. A high-capacity secondary battery, a secondary battery with excellent charge and discharge characteristics, or a highly-safe or highly-reliable secondary battery is provided. A novel material, active material particles, and a storage device are provided. The positive electrode active material particle includes a first region and a second region in contact with the outside of the first region. The first region contains lithium, oxygen, and an element M that is one or more elements selected from cobalt, manganese, and nickel. The second region contains the element M, oxygen, magnesium, and fluorine. The atomic ratio of lithium to the element M (Li/M) measured by X-ray photoelectron spectroscopy is 0.5 or more and 0.85 or less. The atomic ratio of magnesium to the element M (Mg/M) is 0.2 or more and 0.5 or less.

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

Abstract: There is provided an information processing apparatus including a part generation unit configured to generate a part that is suitable for a predetermined application and that includes at least a portion of any photo and is displayed on a display screen at a time of execution of the application, and an application control unit configured to control the execution of the application and at least display the part on the display screen during the execution of the application.

Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.

Abstract: Provided is a positive electrode active material which suppresses a reduction in capacity due to charge and discharge cycles when used in a lithium ion secondary battery. A covering layer is formed by segregation on a superficial portion of the positive electrode active material. The positive electrode active material includes a first region and a second region. The first region exists in an inner portion of the positive electrode active material. The second region exists in a superficial portion of the positive electrode active material and part of the inner portion thereof. The first region includes lithium, a transition metal, and oxygen. The second region includes magnesium, fluorine, and oxygen.

Abstract: A sound output apparatus includes a diaphragm having a predetermined plane positioned at a rear surface side of a light provision unit, and a vibrator for providing vibration in a direction substantially orthogonal to the predetermined plane.

Abstract: A dialysate extraction device comprising a dialysate extraction means including an inlet port and an outlet port adapted to be connected to a flow path of fluid for flowing the fluid therethrough and a projected collection port for collecting the fluid flowing through the inlet and outlet port; a outer circumference wall part mounted on the dialysate extraction means so that it covers a projected end of the collection port and is projected therefrom; a connection member formed with a connection portion to be connected to the collection port and a fitting portion to be fitted into an inner circumference of the outer circumference wall part and adapted to extract the fluid through the collection port under a condition in which the connection portion is connected to the outer circumference wall part; and correction portions formed on the inner circumference of the outer circumference wall part for correcting position and attitude of the connection member relative to the collection port before a tip end of the co

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract: One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or ?30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

Abstract: Provided is an inverted pendulum type vehicle including a drive wheel and a boarding part on which a rider rides in a standing position, the inverted pendulum type vehicle including: a detection unit configured to detect a drive torque of the drive wheel to maintain an inverted state; and an output unit configured to generate torque information about an ankle torque based on the drive torque detected by the detection unit and output the generated torque information, the ankle torque being applied to the boarding part by the rider.

Abstract: There is provided an information processing apparatus including a part generation unit configured to generate a part that is suitable for a predetermined application and that includes at least a portion of any photo and is displayed on a display screen at a time of execution of the application, and an application control unit configured to control the execution of the application and at least display the part on the display screen during the execution of the application.

Abstract: An object is to provide a semiconductor device including an oxide semiconductor with stable electric characteristics can be provided. An insulating layer having many defects typified by dangling bonds is formed over an oxide semiconductor layer with an oxygen-excess mixed region or an oxygen-excess oxide insulating layer interposed therebetween, whereby impurities in the oxide semiconductor layer, such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O), are moved through the oxygen-excess mixed region or oxygen-excess oxide insulating layer and diffused into the insulating layer. Thus, the impurity concentration of the oxide semiconductor layer is reduced.

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.