Patents by Inventor Masahiro Takahashi

Masahiro Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic device including memory arrays with variable resistance storage elements arranged on different sides of a word line driving unit
    Patent number: 9535834
    Abstract: An electronic device includes a semiconductor device, wherein the semiconductor device includes: a word line driving unit for driving a plurality of word lines; a first cell array arranged at one side of the word line driving unit; a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit, arranged between the first cell array and the second cell array, for generating a bias voltage based on currents flowing through the first reference resistance element included in the first cell array and the second reference resistance element included in the second cell array; a first read control unit; and a second read control unit.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: January 3, 2017
    Assignees: SK Hynix Inc., Kabushiki Kaisha Toshiba
    Inventors: Dong-Keun Kim, Masahiro Takahashi, Tsuneo Inaba
  • Light-emitting element
    Patent number: 9538607
    Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
    Type: Grant
    Filed: March 26, 2015
    Date of Patent: January 3, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Satoko Shitagaki, Satoshi Seo, Nobuharu Ohsawa, Hideko Inoue, Masahiro Takahashi, Kunihiko Suzuki
  • Device for producing gas hydrate
    Patent number: 9533277
    Abstract: To enable long-term continuous operation by preventing blocking of a reaction pipe line disposed in a multi-pipe or double-walled-pipe heat exchanger, provided is a device for producing gas hydrate including a multi-pipe or double-walled-pipe device 1 for generating gas hydrate having a reaction pipe line 2 for flowing raw material water w and raw material gas g and a coolant circulation region 3 for circulating a coolant c and thereby cooling the reaction pipe line 2, wherein a coil spring 4 extending in the longitudinal direction of the reaction pipe line 2 is provided in the reaction pipe line 2.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: January 3, 2017
    Assignee: MITSUI ENGINEERING & SHIPBUILDING CO., LTD.
    Inventors: Nobutaka Ohya, Noriya Tokunaga, Tetsuo Hayase, Masahiro Takahashi
  • SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20160379699
    Abstract: According to one embodiment, a semiconductor memory device includes a first memory cell array including a first memory cell having a variable resistive element, a second memory cell array including a second memory cell having the variable resistive element, a reference signal generation circuit which generates a reference signal, a sense amplifier having a first input terminal and a second input terminal, and a read enable control circuit which generates a read enable signal in accordance with a command from outside and control switching between a single cell read mode and a twin cell read mode.
    Type: Application
    Filed: September 9, 2016
    Publication date: December 29, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Masahiro TAKAHASHI, Tsuneo INABA
  • Imaging apparatus, image processing device, image processing method, and program
    Patent number: 9525827
    Abstract: An imaging apparatus includes a control unit which displays cutout positions of a start frame and an end frame on an object image which is displayed on a display unit, and sets frame setting information including the cutout positions of the start frame and the end frame, in which the control unit determines a cutout region of an image frame according to the frame setting information in each of a plurality of photographed images which are photographed continuously or intermittently, and executes image cutout processing according to determined information.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: December 20, 2016
    Assignee: Sony Corporation
    Inventor: Masahiro Takahashi
  • SEMICONDUCTOR DEVICE
    Publication number: 20160351721
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Application
    Filed: August 10, 2016
    Publication date: December 1, 2016
    Inventors: Akiharu MIYANAGA, Yasuharu HOSAKA, Toshimitsu OBONAI, Junichi KOEZUKA, Motoki NAKASHIMA, Masahiro TAKAHASHI, Shunsuke ADACHI, Takuya HIROHASHI
  • Semiconductor storage device
    Patent number: 9508413
    Abstract: A semiconductor storage device includes a first bit line and a second bit line. A nonvolatile memory element and a first cell transistor are connected in series between the first bit line and the second bit line. A sense transistor has a gate connected to a sense node which is provided between the first bit line and the memory element. A read bit line is connected to a source or a drain of the sense transistor. The read bit line is configured to transmit data of the memory element. A sense amplifier is configured to detect the logic of data transmitted from the read bit line.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: November 29, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akira Katayama, Masahiro Takahashi
  • Oxide semiconductor film and semiconductor device
    Patent number: 9496330
    Abstract: A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide semiconductor film with less defects such as grain boundaries is provided. One embodiment of the present invention is a crystalline oxide semiconductor film which is provided over a substrate and has a region including five or less areas where a transmission electron diffraction pattern showing discontinuous points is observed when an observation area is changed one-dimensionally within a range of 700 nm, using a transmission electron diffraction apparatus with an electron beam having a probe diameter of 1 nm.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: November 15, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masashi Tsubuku, Masashi Oota, Koji Dairiki, Masahiro Takahashi
  • Resistance change memory
    Patent number: 9484091
    Abstract: According to one embodiment, a resistance change memory includes a memory cell, a sense amplifier and a global bit line. The memory cell is disposed at a location where a local bit line and a word line intersect each other. The memory cell is connected to both the local bit line and the word line. The sense amplifier reads data stored on the memory cell by supplying a read current to the memory cell. The global bit line is connected between the local bit line and the sense amplifier. The global bit line feeds the read current supplied by the sense amplifier to the local bit line. The sense amplifier charges the global bit line, before the local bit line and the global bit line are connected to each other.
    Type: Grant
    Filed: March 3, 2015
    Date of Patent: November 1, 2016
    Assignees: KABUSHIKI KAISHA TOSHIBA, SK HYNIX INC.
    Inventors: Masahiro Takahashi, Akira Katayama, Dong Keun Kim, Byoung Chan Oh
  • Oxide semiconductor film, transistor, and semiconductor device
    Patent number: 9478603
    Abstract: To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor including the oxide semiconductor film in its channel formation region, and a highly reliable semiconductor device including the transistor. The oxide semiconductor film including indium includes a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor film. In the crystal part, the length of a crystal arrangement part containing indium and oxygen on a plane perpendicular to the c-axis is more than 1.5 nm. Further, the semiconductor device includes the transistor including the oxide semiconductor film in its channel formation region.
    Type: Grant
    Filed: May 12, 2015
    Date of Patent: October 25, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masahiro Takahashi
  • Oxide semiconductor film and semiconductor device
    Patent number: 9478668
    Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1-?O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).
    Type: Grant
    Filed: April 3, 2012
    Date of Patent: October 25, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Masahiro Takahashi, Kengo Akimoto, Shunpei Yamazaki
  • OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
    Publication number: 20160308068
    Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+?Ga1??O3(ZnO)m (0<?<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InxGayO3(ZnO)m (0<X<2, 0<y<2, and m=1 to 3 are satisfied).
    Type: Application
    Filed: June 30, 2016
    Publication date: October 20, 2016
    Inventors: Masahiro TAKAHASHI, Kengo AKIMOTO, Shunpei YAMAZAKI
  • INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, METHOD OF PROCESSING INFORMATION, AND PROGRAM
    Publication number: 20160301879
    Abstract: An information processing apparatus, an information processing system, and a method of processing information are provided. In one embodiment, the information processing apparatus includes a processor, and a memory device storing instructions. When executed by the processor, the instructions cause the processor to receive, from a first information processing apparatus, area specifying information and location information, the area specifying information specifying a display area in an image, the display area including a plurality of partial images, the location information indicating at least one location of the plurality of partial images. The instructions further cause the processor to transmit, to a second information processing apparatus, the area specifying information and the location information.
    Type: Application
    Filed: June 17, 2016
    Publication date: October 13, 2016
    Inventors: Hiroshi Kyusojin, Yoichi Mizutani, Yutaka Hasegawa, Masahiro Takahashi
  • OXIDE SEMICONDUCTOR
    Publication number: 20160297686
    Abstract: To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.
    Type: Application
    Filed: June 13, 2016
    Publication date: October 13, 2016
    Inventors: Shunpei YAMAZAKI, Masahiro TAKAHASHI, Noboru KIMIZUKA
  • Semiconductor device and method for manufacturing the same
    Patent number: 9466728
    Abstract: A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield, so that high productivity is achieved. In a semiconductor device including a transistor in which a source electrode layer and a drain electrode layer are provided over and in contact with an oxide semiconductor film, entry of impurities and formation of oxygen vacancies in an end face portion of the oxide semiconductor film are suppressed. This can prevent fluctuation in the electric characteristics of the transistor which is caused by formation of a parasitic channel in the end face portion of the oxide semiconductor film.
    Type: Grant
    Filed: July 16, 2015
    Date of Patent: October 11, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Motoki Nakashima, Masahiro Takahashi
  • Semiconductor device and manufacturing method thereof
    Patent number: 9450104
    Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: September 20, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Shinji Ohno, Yuichi Sato, Masahiro Takahashi, Hideyuki Kishida
  • MULTI-POLE, THREE-PHASE ROTARY ELECTRIC MACHINE
    Publication number: 20160268859
    Abstract: A multi-pole, three-phase rotary electric machine includes a multiplicity of armature windings provided on a stator. Respective one ends of the armature windings are external connection ends that are connected with one another in three phases, while respective other ends of the armature windings being neutral ends that are all connected together with one another. The external connection ends of the multiplicity of armature windings are located on one axial side of the stator, and the neutral ends of the multiplicity of armature windings are located on the other axial side of the stator opposite the external connection ends.
    Type: Application
    Filed: February 8, 2016
    Publication date: September 15, 2016
    Inventors: Masahiro Takahashi, Nobuyuki Kaneko
  • Semiconductor device
    Patent number: 9443987
    Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.
    Type: Grant
    Filed: August 11, 2014
    Date of Patent: September 13, 2016
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Akiharu Miyanaga, Yasuharu Hosaka, Toshimitsu Obonai, Junichi Koezuka, Motoki Nakashima, Masahiro Takahashi, Shunsuke Adachi, Takuya Hirohashi
  • Semiconductor device and method for manufacturing the same
    Patent number: 9443874
    Abstract: An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: September 13, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akiharu Miyanaga, Junichiro Sakata, Masayuki Sakakura, Masahiro Takahashi, Hideyuki Kishida, Shunpei Yamazaki
  • Display panel or screen with graphical user interface
    Patent number: D776139
    Type: Grant
    Filed: November 22, 2013
    Date of Patent: January 10, 2017
    Assignee: Sony Corporation
    Inventors: Mitsuo Okumura, Motoki Higashide, Masahiro Takahashi