Abstract: A first engagement body is provided to one of two assembly members to be assembled with each other through a relative rotation operation pivoted about a relative rotational axis, and a second engagement body is provided to the other assembly member. The first engagement body includes a first and a second spaces, the first space being provided to allow rotation of a third opposing wall part of the second engagement body relative to the first engagement body, which is pivoted about the relative rotational axis until engagement between the first engagement member and a second engagement member of the second engagement body is completed, the second space being provided to allow rotation of a fourth opposing wall part of the second engagement body relative to the first engagement body, which is pivoted about the relative rotational axis until engagement of the first and the second engagement members is completed.

Abstract: An accommodation chamber includes an internal wall surface to be disposed to face an accommodation target object at an interval, the accommodation target object includes an external wall surface to be disposed to face the internal wall surface at an interval, one wall surface of the internal wall surface and the external wall surface includes a plurality of projecting portions that project toward another wall surface thereof, and extend along an insertion direction of the accommodation target object to the accommodation chamber, and contact the other wall surface, and the projecting portions are formed so that a demolding direction from a molding die forming the one wall surface corresponds to an extending direction, and the one wall surface is divided into a plurality of regions along the insertion direction.

Abstract: An accommodation chamber includes an internal wall surface to be disposed to face an accommodation target object at an interval, the accommodation target object includes an external wall surface to be disposed to face the internal wall surface at an interval, one wall surface of the internal wall surface and the external wall surface includes a plurality of projecting portions that project toward another wall surface thereof, and extend along an insertion direction of the accommodation target object to the accommodation chamber, and contact the other wall surface, and the projecting portions are formed so that a demolding direction from a molding die forming the one wall surface corresponds to an extending direction, and the one wall surface is divided into a plurality of regions along the insertion direction.

Abstract: An electrical connection box includes a housing having a temporary fixing projection. The temporary fixing projection includes a locking portion and a plate spring portion. The locking portion is provided with a locking claw projecting toward an outside in a radial direction. The plate spring portion includes a flat surface. In a temporary fixing state where the temporary fixing projection is inserted into a temporary fixing hole of an attachment panel, a locking surface of the locking claw of the locking portion faces a facing surface in an insertion direction. In the temporary fixing state, the plate spring portion is elastically deformed toward an inside in the radial direction. The flat surface of the plate spring portion is in contact with a contact surface and applies, to the attachment panel, a restoring force toward the outside in the radial direction.

Abstract: A mixed material having a high expansion rate for producing a porous metallic sintered body including: a conventional mixed material for producing a porous metallic sintered body which is formed of a mixture including a composition of 0.05 to 10% by mass of a non-water-soluble hydrocarbon-based organic solvent having 5 to 8 carbon atoms, 0.5 to 20% by mass of a water-soluble resin binder, and 5 to 80% by mass of a metal powder having an average particle size within a range of 0.5 to 500 ?m, and water as the balance; and a gas, wherein the mixed material contains the gas so that the proportion of the gas is within a range of 2 to 50% by volume while the remainder is the conventional mixed material for producing a porous metallic sintered body.

Abstract: An electrical connection box includes a housing having a temporary fixing projection. The temporary fixing projection includes a locking portion and a plate spring portion. The locking portion is provided with a locking claw projecting toward an outside in a radial direction. The plate spring portion includes a flat surface. In a temporary fixing state where the temporary fixing projection is inserted into a temporary fixing hole of an attachment panel, a locking surface of the locking claw of the locking portion faces a facing surface in an insertion direction. In the temporary fixing state, the plate spring portion is elastically deformed toward an inside in the radial direction. The flat surface of the plate spring portion is in contact with a contact surface and applies, to the attachment panel, a restoring force toward the outside in the radial direction.

Abstract: Contact areas for three-dimensional memory devices including multiple vertically stacked tier structures can be reduced by overlapping stepped terraces of the tier structures. Sacrificial via structures laterally surrounded by a respective insulating spacer can be formed through an overlying tier structure in the stepped terrace region thereof. After formation of memory stack structures, the sacrificial via structures can be removed to provide first upper via cavities. An isotropic etch can be performed to extend the first upper via cavities to top surfaces of underlying first electrically conductive layers in an underlying tier structure while forming second upper via cavities extending to second electrically conductive layers in the overlying tier structure.

Abstract: A cathode for lithium ion secondary battery of the present invention includes a cathode including a current collector and active material supported on the current collector. The current collector is made of porous metal. The cathode has holes in its surface, and active material density is 50 to 80% of true density of the active material. Because the cathode is thick and supported with the active material densely and the holes are formed in its surface, transfer of an electron and insertion/release of lithium ion take place in the cathode surface and deep in the cathode in the lithium ion secondary battery. Therefore, the lithium ion released from the active material can migrate in the electrolyte solution in the holes, so that the active material present deep in the cathode is effectively utilized, and thus, the lithium ion secondary battery has high capacity and can promptly charge/discharge.

Abstract: To improve the reliability of a semiconductor device. In particular, the reading of incorrect information from a memory cell is suppressed. A first low-concentration region is formed in a well, and is located under a side wall insulating film in a planar view. The first low-concentration region has a second conductivity type, and the second conductivity-type impurity concentration is lower than the impurity concentration in a drain. A second low-concentration region is formed in the well, and is located under a spacer insulating film in a planar view. In addition, a second conductivity type impurity concentration in the second low-concentration region is lower than the second conductivity-type impurity concentration in the first low-concentration region, and is higher than the second conductivity-type impurity concentration in a portion located under the insulating film of the well.

Abstract: According to a method for producing an inorganic iodide in accordance with the present invention, it is possible to efficiently produce a highly pure inorganic iodide by reacting a hydrogen iodide gas with an inorganic base compound by bringing the hydrogen iodide gas into contact with the inorganic base compound. As such, it is possible to provide a simple and efficient method for producing an inorganic iodide.

Abstract: To improve the reliability of a semiconductor device. In particular, the reading of incorrect information from a memory cell is suppressed. A first low-concentration region is formed in a well, and is located under a side wall insulating film in a planar view. The first low-concentration region has a second conductivity type, and the second conductivity-type impurity concentration is lower than the impurity concentration in a drain. A second low-concentration region is formed in the well, and is located under a spacer insulating film in a planar view. In addition, a second conductivity type impurity concentration in the second low-concentration region is lower than the second conductivity-type impurity concentration in the first low-concentration region, and is higher than the second conductivity-type impurity concentration in a portion located under the insulating film of the well.

Abstract: A gypsum board having mold resistance includes a gypsum core and gypsum board paper covering two surfaces of the gypsum core. The gypsum core contains first and second anti-mold agents, each having a water solubility of 200 ppm or less, and a waterproofing agent. A mixture consisting of the first and second anti-mold agents and starch is applied on a surface of the gypsum board paper, which surface is out of contact with the gypsum core. The first anti-mold agent is 2-(4-thiazolyl)-benzimidazole (TBZ) or 2-benzimidazol carbamic acid methyl ester (BCM), and the second anti-mold agent is 3-iodo-2-propyl butyl carbamate (IPBC). The total amount of the first and second anti-mold agents contained in the gypsum core is 0.03% to 0.2% of gypsum forming the gypsum core on an active ingredient basis, and the additive amount of the waterproofing agent is 0.3% to 1.5% of the gypsum forming the gypsum core.

Abstract: Disclosed is a resin composition for encapsulating a semiconductor including a phenol resin (A) having one or more components containing a component (A1) composed of a polymer having a first structural unit and a second structural unit, an epoxy resin (B), and an inorganic filler (C). Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract: A curable composition includes: 100 parts by mass of a silicon-containing polymer having a Mw of 3,000 to 100,000 obtainable by hydrolysis-condensation of an organosilane mixture including R1SiX3, R2SiX3, R3R4SiX2 and R5SiX3, the total of R2SiX3 and R3R4SiX2 being 5 to 60 mol %, optionally a prepolymer, optionally a cyclic siloxane compound, 0.0001 to 10 parts by mass of an organic peroxide and optionally a metal catalyst, and 10 to 1,500 parts by mass of a filler, wherein R1 is a C2-6 alkenyl group, R2 is a C1-6 alkyl group, R3 and R4 are each a C1-6 alkyl group, R5 is a phenyl group optionally substituted with a C1-6 alkyl group, and X is a C1-6 alkoxy group, one or more of R2 to R4 is a methyl group, f represents a number of 2 to 10, g represents a number of 0 to 8, and n represents 1 or 2.

Abstract: An apparatus for producing a porous body that forms an expandable slurry containing at least inorganic powder, a foaming agent, and a binder into a sheet, causes the expandable slurry sheet to be foamed and baked, and thereby produces the porous body, the apparatus includes: a mixer preparing the expandable slurry by containing inorganic powder, a foaming agent, and a binder; a die-coater that has a discharge opening which discharges the expandable slurry provided from the mixer to an external thereof so as to shape the expandable slurry into a sheet; and a carrier sheet arranged so as to face the discharge opening of the die-coater with a gap interposed therebetween, and feeding the expandable slurry discharged from the discharge opening, wherein a flow path of the expandable slurry from inside the mixer to the discharge opening of the die-coater is hermetically sealed from an outside.

Abstract: Disclosed is a resin composition for encapsulating a semiconductor containing an epoxy resin (A), a curing agent (B), and an inorganic filler (C), wherein the epoxy resin (A) includes an epoxy resin (A1) having a predetermined structure, and the curing agent (B) includes a phenol resin (B1) having a predetermined structure, wherein the content of a c=1 component included in the total amount of the phenol resin (B1) is not less than 40% in terms of area percentage and the content of a C?4 component is not more than 20% in terms of area percentage, as measured by the area method of gel permeation chromatography. Also disclosed is a semiconductor device obtained by encapsulating a semiconductor element with a cured product of the resin composition for encapsulating a semiconductor.

Abstract: The semiconductor device 1 includes a substrate 3, a semiconductor chip 4 mounted on the substrate 3, the substrate 3, a bump 5 connecting the substrate 3 and the semiconductor chip 4, and an underfill 6 filling in around the bump 5. In the case of a bump 5 composed of a high-melting-point solder having a melting point of 230° C. or more, the underfill 6 is composed of a resin material having an elastic modulus in the range of 30 MPa to 3000 MPa. In the case of a bump 5 composed of a lead-free solder, the underfill 6 is composed of a resin material having an elastic modulus in the range of 150 MPa to 800 MPa. An insulating layer 311 of buildup layers 31 of the substrate 3 has a linear expansion coefficient of 35 ppm/° C. or less in the in-plane direction of the substrate at temperatures in the range of 25° C. to the glass transition temperature.

Abstract: A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75° C. of the cured member is 15 to 35 ppm/° C., the glass transition temperature of at least one buildup layer is 170° C. or more, and the coefficient of linear expansion of at 25 to 75° C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination.

Abstract: A semiconductor device including a plurality of capacitance units connected in parallel between a first voltage and a second voltage. Each of the plurality of capacitance units includes: a capacitance element connected with the first voltage; and a capacitance disconnecting circuit connected between the second voltage and the capacitance element. The capacitance disconnecting circuit includes a non-volatile memory cell with a threshold voltage changed based on a change of a leakage current which flows from the capacitance element, and blocks off the leakage current based on a rise of the threshold voltage of the non-volatile memory cell when the leakage current exceeds a predetermined value.

Abstract: A resin composition for encapsulation according to the present invention includes: a phenol resin-based curing agent (A) essentially containing a polymer component (A-1) in which a biphenylene group-containing structural unit bonds a monovalent hydroxyphenylene structural unit and a polyvalent hydroxyphenylene structural unit together and a polymer component (A-2) in which the biphenylene group-containing structural unit bonds the polyvalent hydroxyphenylene structural units together; an epoxy resin (B); and an inorganic filler (C). This makes it possible to economically obtain a resin composition for encapsulation having soldering resistance, flame resistance, continuous moldability, flowability and high temperature storage stability in an excellent balanced manner, and an electronic component device produced by encapsulating an element with a cured product thereof and having high reliability.