Abstract: A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7 /electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of the ferroelectric characteristic, thereby to attain a long life ferroelectric memory device.

Abstract: By providing a line-of-sight-information detection device for detecting an angle of rotation of an eyeball, an individual-difference correction unit for correcting the detected angle of rotation of the eyeball for each individual, an individual-difference preserving unit for preserving line-of-sight information in which individual difference is corrected, a line-of-sight-information processing unit for calculating a line-of-sight position based on the corrected angle of rotation of the eyeball and generating an event at the line-of-sight position, and an event transmission unit for transmitting the event to a host system, it is possible to use line-of-sight information as a new basis for controlling a graphical user interface. Thus, the user's hands are used only on a keyboard, and the functions of a mouse, which has conventionally been operated by the user's hand, can be provided by the user's line of sight. As a result, it is possible, for example, to improve the operational efficiency.