Patents by Inventor Masakatsu Ohno
Masakatsu Ohno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210020668Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.Type: ApplicationFiled: August 3, 2020Publication date: January 21, 2021Inventors: Shunpei YAMAZAKI, Masataka SATO, Masakatsu OHNO, Seiji YASUMOTO, Hiroki ADACHI
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Patent number: 10879331Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: May 12, 2020Date of Patent: December 29, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 10872947Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: April 23, 2020Date of Patent: December 22, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 10861733Abstract: The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.Type: GrantFiled: July 31, 2017Date of Patent: December 8, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Seiji Yasumoto, Naoki Ikezawa, Satoru Idojiri, Shunpei Yamazaki
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Patent number: 10854697Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: November 29, 2018Date of Patent: December 1, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 10763322Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: July 12, 2019Date of Patent: September 1, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Publication number: 20200273936Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: ApplicationFiled: May 12, 2020Publication date: August 27, 2020Inventors: Shunpei YAMAZAKI, Masakatsu OHNO, Hiroki ADACHI, Satoru IDOJIRI, Koichi TAKESHIMA
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Publication number: 20200273935Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: ApplicationFiled: May 12, 2020Publication date: August 27, 2020Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi TAKESHIMA
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Patent number: 10741590Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.Type: GrantFiled: April 3, 2017Date of Patent: August 11, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masataka Sato, Masakatsu Ohno, Seiji Yasumoto, Hiroki Adachi
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Publication number: 20200251547Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: ApplicationFiled: April 23, 2020Publication date: August 6, 2020Inventors: Shunpei YAMAZAKI, Masakatsu OHNO, Hiroki ADACHI, Satoru IDOJIRI, Koichi TAKESHIMA
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Publication number: 20200235323Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.Type: ApplicationFiled: April 8, 2020Publication date: July 23, 2020Inventors: Masakatsu OHNO, Kayo KUMAKURA, Hiroyuki WATANABE, Seiji YASUMOTO, Satoru IDOJIRI, Hiroki ADACHI
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Publication number: 20200161340Abstract: A highly reliable semiconductor device is provided. A second insulating layer is positioned over a first insulating layer. A semiconductor layer is positioned between the first insulating layer and the second insulating layer. A third insulating layer is positioned over the second insulating layer. A fourth insulating layer is positioned over the third insulating layer. A first conductive layer includes a region overlapping with the semiconductor layer, and is positioned between the third insulating layer and the fourth insulating layer. The third insulating layer includes a region in contact with a bottom surface of the first conductive layer and a region in contact with the fourth insulating layer. The fourth insulating layer is in contact with atop surface and a side surface of the first conductive layer. A fifth insulating layer is in contact with a top surface and a side surface of the semiconductor layer.Type: ApplicationFiled: August 22, 2018Publication date: May 21, 2020Inventors: Masami JINTYOU, Daisuke KUROSAKI, Masakatsu OHNO, Junichi KOEZUKA
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Patent number: 10629831Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.Type: GrantFiled: July 24, 2017Date of Patent: April 21, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Kayo Kumakura, Hiroyuki Watanabe, Seiji Yasumoto, Satoru Idojiri, Hiroki Adachi
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Patent number: 10583641Abstract: A yield in the step of bonding two members together is improved. A bonding apparatus includes a stage capable of supporting a first member having a sheet-like shape, a fixing mechanism capable of fixing one end portion of a second member having a sheet-like shape so that the second member overlaps with the first member, and a pressurizing mechanism capable of moving from a side of the one end portion of the second member to a side of the other end portion and spreading a bonding layer under pressure between the first member and the second member. The first member and the second member are bonded to each other.Type: GrantFiled: November 6, 2017Date of Patent: March 10, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Yoshiharu Hirakata, Shingo Eguchi, Yasuhiro Jinbo, Hisao Ikeda, Kohei Yokoyama, Hiroki Adachi, Satoru Idojiri
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Publication number: 20190333976Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: ApplicationFiled: July 12, 2019Publication date: October 31, 2019Inventors: Shunpei YAMAZAKI, Masakatsu OHNO, Hiroki ADACHI, Satoru IDOJIRI, Koichi TAKESHIMA
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Publication number: 20190333942Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.Type: ApplicationFiled: April 3, 2017Publication date: October 31, 2019Inventors: Shunpei YAMAZAKI, Masataka SATO, Masakatsu OHNO, Seiji YASUMOTO, Hiroki ADACHI
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Patent number: 10442172Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.Type: GrantFiled: June 1, 2017Date of Patent: October 15, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kayo Kumakura, Tomoya Aoyama, Akihiro Chida, Kohei Yokoyama, Masakatsu Ohno, Satoru Idojiri, Hisao Ikeda, Hiroki Adachi, Yoshiharu Hirakata, Shingo Eguchi, Yasuhiro Jinbo
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Patent number: 10355067Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.Type: GrantFiled: February 12, 2018Date of Patent: July 16, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Masakatsu Ohno, Hiroki Adachi, Satoru Idojiri, Koichi Takeshima
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Patent number: 10343191Abstract: An object is to eliminate a harmful effect when a film is bonded by wiping an adhering sealant (30a). Characterized is a wiping device (200) including a stage (230) that supports a sheet-like member (220), a wiping means (210) that wipes an adhering object (30a) adhering on a peripheral portion of the sheet-like member (220), a wiping cloth (241) that is attachably and detachably provided for the wiping means (210), and a solvent (261) that adheres to the wiping cloth (241), in which the wiping means (210) is provided with the wiping cloth (241), makes the solvent (261) adhere to the wiping cloth (241), and wipes the adhering object (30a), or a stack manufacturing apparatus (1000) including such a wiping device (200).Type: GrantFiled: April 13, 2015Date of Patent: July 9, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Masakatsu Ohno, Kayo Kumakura, Satoru Idojiri, Yoshiharu Hirakata, Kohei Yokoyama
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Patent number: 10317717Abstract: A liquid crystal display device that is not influenced by a noise in obtaining positional information can be provided. The liquid crystal display device includes a first substrate provided with a pixel electrode and a common electrode with a first insulating film interposed therebetween. The pixel electrode and the common electrode partly overlap with each other. The liquid crystal display device further includes a second substrate provided with a pair of electrodes, a resin film covering the pair of electrodes, and a conductive film on the resin film. The pair of electrodes partly overlap with each other with a second insulating film interposed therebetween. The liquid crystal display device further includes a liquid crystal layer between the conductive film on the second substrate side and the pixel electrode and the common electrode on the first substrate side. A predetermined potential is supplied to the conductive film.Type: GrantFiled: February 15, 2017Date of Patent: June 11, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toru Tanabe, Takahiro Fukutome, Koji Moriya, Daisuke Kurosaki, Masakatsu Ohno