Abstract: A device includes a cap wafer with a sealing region surrounding a gap-control region, and a structure wafer with a corresponding sealing region and gap-control region. The cap wafer has top and bottom surfaces, defining an xy-plane, and a vertical z-direction perpendicular to this plane. The structure wafer is similarly oriented, with its top surface parallel to the xy-plane. The cap wafer and structure wafer are bonded by a eutectic seal connecting their sealing regions, ensuring alignment of their gap-control regions along the z-axis. The device also includes a metal layer located on the bottom surface of the cap wafer in its gap-control region, and the structure wafer features a standoff protruding from its top surface within its gap-control region, extending along the z-direction to contact the metal layer.

Abstract: A resonance device includes a resonator including a vibration part, a frame disposed at at least a part of a circumference of the vibration part, and a supporting arm connecting the vibration part to the frame; and a first substrate including a first bottom plate configured to have a first gap from o the vibration part in a thickness direction, a first side wall, and a first limiting part having a first distance to the resonator in the thickness direction smaller than a second distance between the resonator and the first bottom plate. The first limiting part includes a first tip-end with a first metal film facing the resonator in the thickness direction. The first metal film is configured as a first getter that maintains a vacuum of a vibration space in the resonance device.

Abstract: A resonance device that includes a MEMS substrate including a resonator, an upper lid that seals a vibration space of the resonator, and a ground portion positioned between the MEMS substrate and the upper lid, the ground portion being extended to an inside of the upper lid and electrically connected to the upper lid.

Abstract: A resonance device that includes: a first substrate which includes a first silicon substrate and a resonator; a second substrate arranged on a side of the resonator opposite to the first silicon substrate; and a bonding portion bonding the first substrate and the second substrate to each other so as to seal a vibration space of the resonator. The resonator has a silicon film on a surface thereof facing the first silicon substrate. The silicon film is directly bonded to the first silicon substrate in an entire circumferential region surrounding the vibration space in a plan view of the first substrate.

Abstract: A resonator that includes: a silicon substrate containing phosphorus; and a vibration portion on the silicon substrate and constructed to vibrate in a predetermined vibration mode as a main vibration. In the silicon substrate, a concentration of the phosphorus is 1.1×1020 [atoms/cm3] or higher, and a concentration of carbon is 1.1×1018 [atoms/cm3] or lower.

Abstract: A method of manufacturing a resonance device includes preparing a resonance device and adjusting a frequency of the resonator. The resonance device includes a lower lid, an upper lid joined to the lower lid, and a resonator with vibration arms that vibrate in bending vibration in an interior space between the lower and upper lids. The adjusting of the frequency of the resonator includes vibrating the vibration arms in bending vibration and thereby causing respective ends of the arms to strike the lower lid at an impact speed of 3.5×103 ?m/sec or more. The ends of the vibration arms are made of silicon oxide, and the lower lid is made of silicon.

Abstract: A resonator that includes: a vibrating portion including a substrate, and a piezoelectric layer on the substrate; a holding portion around at least a part of the vibrating portion in a plan view of the substrate; and a support portion between the holding portion and the vibrating portion and that supports the vibrating portion. The vibrating portion includes a first portion and a second portion, a thickness of the second portion in a thickness direction of the substrate is larger than a thickness of the first portion in the thickness direction, and the vibrating portion has a recessed shape or a protruding shape defined by the first portion and the second portion on a side of the substrate opposite to the piezoelectric layer.

Abstract: A MEMS device is provided that includes a handle layer having a cavity and a suspension structure, a first device layer including a static electrode, a second device layer including a seismic element moveably suspended above the first device layer and a cap layer. The seismic element acts as the moveable electrode or the seismic element is mechanically coupled to move with the moveable electrode. The handle layer, the first device layer, the second device layer and the cap layer, a first electrically insulating layer between the handle layer and the first device layer, and a second electrically insulating layer between the first device layer and the second device layer form an enclosure that accommodates the seismic element, the static electrode and the moveable electrode.

Abstract: An inertial sensor includes a MEMS substrate and an upper lid joined to the MEMS substrate. The MEMS substrate includes a capacitance portion including first and second movable electrodes causing a capacitance to change in accordance with a distance between the first and second movable electrodes, a holding portion holding the capacitance portion, and a spring portion connecting the capacitance portion and the holding portion to each other and supporting the first movable electrode and the second movable electrode in a displaceable manner with respect to the holding portion.

Abstract: A resonance device is provided that includes a resonator including a base, a plurality of vibration arms having arms on a fixed end side connected to the base and weight portions on an open end side. A frame is around a periphery of the vibration arms and holds the base. The vibration arms extending parallel to each other and vibrating in an out-of-plane bending vibration mode as a main vibration. A lower cover and an upper form a vibration space for the resonator. A protrusion protrudes into the vibration space from an inner surface of the lower or upper cover. The frame has projections formed in positions facing the weight portions in a plan view.

Abstract: A resonance device that includes: a first substrate having a first silicon substrate and a resonator, wherein the resonator includes a single-crystal silicon film and a first silicon oxide film interposed between the single-crystal silicon film and the first silicon substrate, and a through hole that passes through the single-crystal silicon film and the first silicon oxide film; a second substrate opposite the first substrate; a frame shaped bonding portion that bonds the first substrate to the second substrate to seal a vibration space of the resonator; and a first blocking member disposed in an interior of the through hole and surrounding a vibration portion of the resonator in a plan view of the first substrate so as to divide the first silicon oxide film, wherein the first blocking member has a lower helium permeability than the first silicon oxide film.

Abstract: A MEMS device that includes a substrate including an element and a connection wiring electrically connected to the element, and a connection portion electrically connected to the connection wiring. The connection portion is formed of a eutectic alloy of a first metal and a second metal. A line width of the connection wiring is smaller than a width of the connection portion when a main surface of the substrate is viewed in a plan view.

Abstract: A resonance device that includes a MEMS substrate including a resonator, an upper lid, and a bonding portion bonding the MEMS substrate and the upper lid to seal a vibration space of the resonator. The bonding portion includes a eutectic layer containing a eutectic alloy as a main component thereof. The eutectic alloy is composed of a first metal containing aluminum as a main component thereof, a second metal of germanium or silicon, and a third metal of titanium or nickel.

Abstract: A method is provided for manufacturing a resonance device, the method includes forming a recessed portion that forms a vibration space for a resonator in an object that is at least one of an upper lid and a lower lid and includes etching on the object by isotropic etching while the object is covered with a mask having a peripheral portion having a frame shape and a stopper formation that extends from the peripheral portion toward an inside of the peripheral portion. The method further includes etching the object while the object is covered with the mask to form a stopper at a position overlapping with the stopper formation on a bottom surface of the recessed portion in a plan view of the object. In this aspect, the stopper restricts collision of the resonator with the bottom surface of the recessed portion.

Abstract: A manufacturing method is provided for a resonance device that includes preparing a collective board including first power supply terminals electrically connected to upper electrodes of a plurality of resonators, and a first coupling wire that electrically connects two or more of the first power supply terminals. The method includes dividing the collective board into a plurality of resonance devices. Moreover, the first power supply terminals include a first metal layer and a second metal layer covering the first metal layer. The first coupling wire includes a portion of the first metal layer that extends from a region covered with the second metal layer. The method further includes removing the portion of the first metal layer extending from the region covered with the second metal layer before the dividing the collective board into the plurality of resonance devices.

Abstract: A resonance device is provided that includes a first substrate including a resonator; and a second substrate bonded to the first substrate. The second substrate includes a first power supply terminal electrically connected to an upper electrode of the resonator, and a ground terminal electrically connected to a lower electrode of the resonator. The first substrate includes a first inner wire that electrically connects the upper electrode to the first power supply terminal, and a first coupling wire connected to the first inner wire and having an end portion located at an outer edge of the first substrate.

Abstract: A method of manufacturing a resonance device includes preparing a resonance device and adjusting a frequency of the resonator. The resonance device includes a lower lid, an upper lid joined to the lower lid, and a resonator with vibration arms that vibrate in bending vibration in an interior space between the lower and upper lids. The adjusting of the frequency of the resonator includes vibrating the vibration arms in bending vibration and thereby causing respective ends of the arms to strike the lower lid at an impact speed of 3.5×103 ?m/sec or more. The ends of the vibration arms are made of silicon oxide, and the lower lid is made of silicon.

Abstract: A resonance device that includes a MEMS substrate including a resonator, an upper cover, and a bonding portion that bonds the MEMS substrate to the upper cover to seal a vibration space of the resonator. The bonding portion includes a eutectic layer composed of a eutectic alloy of germanium and a metal mainly containing aluminum, a first titanium (Ti) layer, a first aluminum oxide film, and a first conductive layer consecutively arranged from the MEMS substrate to the upper cover.

Abstract: A MEMS device includes a lower substrate having a resonator, an upper substrate disposed to oppose an upper electrode of the resonator, a bonding layer sealing an internal space between the lower substrate and the upper substrate, and wiring layers that contain the same metal material as the bonding layer. Moreover, a rare gas content of each of the wiring layers is less than 1×1020 (atoms/cm3).

Abstract: A resonator is provided that includes a vibrating portion including three or more vibrating arms with at least two vibrating arms that bend out of plane with different phases and a base. The resonator also includes a frame that holds the vibrating portion; and a support arm having one end connected to the frame and the other end connected to a rear end portion of the base. The other end of the support arm is connected to a position in a range from ?0.1 WB to 0.1 WB, with respect to a base width WB of the base, relative to a position, on the rear end portion of the base where a center line passes in a plan view. A support arm length of the support arm is 0.2 or more times and 0.4 or less times a vibrating arm length of the vibrating arms.