Abstract: A resonance device that includes a MEMS substrate including a resonator, an upper lid that seals a vibration space of the resonator, and a ground portion positioned between the MEMS substrate and the upper lid, the ground portion being extended to an inside of the upper lid and electrically connected to the upper lid.

Abstract: A resonance device that includes a MEMS substrate that includes a resonator, a top cover having a silicon oxide film on a surface thereof that faces the MEMS substrate, and a bonding part that bonds the MEMS substrate and the top cover to each other so as to seal a vibration space of the resonator. The silicon oxide film includes a through hole that is formed along at least part of the periphery of the vibration space when the top cover is viewed in a plan view and that penetrates to a surface of the top cover. The through hole includes a first metal layer.

Abstract: A MEMS device and a MEMS device manufacturing method are provided for suppressing damage to device parts. An exemplary method of manufacturing a resonance device includes radiating laser light from a bottom surface side of a second substrate to form modified regions inside the second substrate along dividing lines of a first substrate, which has device parts formed on a top surface thereof, and the second substrate, the top surface of which is bonded to the bottom surface of the first substrate via bonding portions. The method further includes dividing the first and second substrates along the dividing lines by applying stress to the modified regions. The bonding portions are formed along the dividing lines and block the laser light.

Abstract: A resonance device that includes a MEMS substrate including a resonator, an upper lid, and a bonding portion bonding the MEMS substrate and the upper lid to seal a vibration space of the resonator. The bonding portion includes a eutectic layer containing a eutectic alloy as a main component thereof. The eutectic alloy is composed of a first metal containing aluminum as a main component thereof, a second metal of germanium or silicon, and a third metal of titanium or nickel.

Abstract: A device substrate that includes a cleavable substrate having a cleavage direction, and a through electrode in the substrate. When a main surface of the substrate is viewed in a plan view thereof, a longitudinal direction of the through electrode is inclined with respect to the cleavage direction of the substrate. As a result, the longitudinal direction of the through electrode is not parallel to and does not match the cleavage direction of the substrate.

Abstract: A MEMS device that includes a substrate including an element and a connection wiring electrically connected to the element, and a connection portion electrically connected to the connection wiring. The connection portion is formed of a eutectic alloy of a first metal and a second metal. A line width of the connection wiring is smaller than a width of the connection portion when a main surface of the substrate is viewed in a plan view.

Abstract: A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.

Abstract: A MEMS device includes a lower substrate having a resonator, an upper substrate disposed to oppose an upper electrode of the resonator, a bonding layer sealing an internal space between the lower substrate and the upper substrate, and wiring layers that contain the same metal material as the bonding layer. Moreover, a rare gas content of each of the wiring layers is less than 1×1020 (atoms/cm3).

Abstract: A resonance device that includes a MEMS substrate including a resonator, an upper cover, and a bonding portion that bonds the MEMS substrate to the upper cover to seal a vibration space of the resonator. The bonding portion includes a eutectic layer composed of a eutectic alloy of germanium and a metal mainly containing aluminum, a first titanium (Ti) layer, a first aluminum oxide film, and a first conductive layer consecutively arranged from the MEMS substrate to the upper cover.

Abstract: A wafer level package that includes a first wafer; a second wafer facing the first wafer; a plurality of chips between the first wafer and the second wafer and arranged in an array; a plurality of sealing frames at predetermined intervals and surrounding each of the plurality of chips to seal the chips; and a coupling portion which couples opposed corners of respective sealing frames.

Abstract: A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.

Abstract: A resonator that includes a vibrating portion that has a piezoelectric film, and a lower and upper electrodes that face each other with the piezoelectric film interposed therebetween. Moreover, a holding portion is provided at least around a maximum displacement region of the vibrating portion and has an insulating film. A holding arm connects the vibrating portion and the holding portion, and include a conductive portion that is in contact with the insulating film of the holding portion in at least a region that faces the maximum displacement region of the vibrating portion. In addition, the conductive portion is electrically connected to the lower electrode or the upper electrode or is grounded.

Abstract: Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

Abstract: A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.

Abstract: A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.

Abstract: A wafer level package that includes a first wafer; a second wafer facing the first wafer; a plurality of chips between the first wafer and the second wafer and arranged in an array; a plurality of sealing frames at predetermined intervals and surrounding each of the plurality of chips to seal the chips; and a coupling portion which couples opposed corners of respective sealing frames.

Abstract: Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

Abstract: External connection conductors are arranged on a back surface of a base material, and wiring conductors are arranged on a front surface. An insulating layer is provided on surfaces of the wiring conductors. Component mounting conductors are provided on a surface of the insulating layer. The component mounting conductor and the wiring conductor are electrically coupled to each other, and the component mounting conductor and the wiring conductor are electrically coupled to each other. The wiring conductor and the external connection conductor are electrically coupled by a conductor film on an inner wall surface of a hole provided between forming areas of the component mounting conductors. The wiring conductor and the external connection conductor are electrically coupled by a conductor film on an inner wall surface of a hole provided between the forming areas of the component mounting conductors.

Abstract: A drop in the luminous efficiency of a light-emitting element and the occurrence of mounting problems for the light-emitting element can be prevented even in a configuration in which an ESD protection element is provided within a mounting substrate. A light-emitting device includes a light-emitting element and a mounting substrate, having a first surface on which the light-emitting element is mounted and a second surface that is opposite from the first surface, that includes a semiconductor-based electrostatic discharge protection element portion that is provided on the second surface side and is connected to the light-emitting element.

Abstract: External connection conductors are arranged on a back surface of a base material, and wiring conductors are arranged on a front surface. An insulating layer is provided on surfaces of the wiring conductors. Component mounting conductors are provided on a surface of the insulating layer. The component mounting conductor and the wiring conductor are electrically coupled to each other, and the component mounting conductor and the wiring conductor are electrically coupled to each other. The wiring conductor and the external connection conductor are electrically coupled by a conductor film on an inner wall surface of a hole provided between forming areas of the component mounting conductors. The wiring conductor and the external connection conductor are electrically coupled by a conductor film on an inner wall surface of a hole provided between the forming areas of the component mounting conductors.