Abstract: A radiation imaging apparatus comprises a pixel region, on an insulating substrate 100, including a plurality of pixels arranged in a matrix, each pixel having a conversion element 101 that converts radiation into electric charges and a switching element 102 connected to the conversion element 101. The conversion element 101 has an upper electrode layer 119, a lower electrode layer 115, a semiconductor layer 117 arranged between the upper electrode layer 119 and the lower electrode layer 115. The upper electrode layer 119 or the lower electrode layer 115 has an opening 200 at least within a region where the semiconductor layer 117 is arranged.

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

Abstract: To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

Abstract: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

Abstract: In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

Abstract: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

Abstract: The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element.

Abstract: This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.

Abstract: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arr

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including: a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element.

Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arr

Abstract: According to a radiation imaging apparatus, any separate AEC sensor need not be prepared. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed. Exposure control for the radiation or control of the optical conversion elements is executed on the basis of the detection result by the second optical conversion element.

Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of an identical type of the bias line, the signal line, and the gate line, wherein at least a part of the connection wiring is arr

Abstract: A reset method of a conversion element is improved, and the simplification of wiring and the improvement of an open area ratio of the conversion element by means of an image pickup apparatus including a plurality of pixels arranged on an insulating substrate, each of the pixels including a conversion element, a first switching element connected to the conversion element in order to transfer an electric signal obtained by the conversion element, and a second switching element connected to the conversion element in order to reset the conversion element by giving constant potential to the conversion element, wherein the second switching element includes a gate electrode, and a source electrode and a drain electrode, and one of the source electrode and the drain electrode is electrically connected to the gate electrode.

Abstract: This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.

Abstract: According to a radiation imaging apparatus, any separate AEC sensor need not be prepared. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed. Exposure control for the radiation or control of the optical conversion elements is executed on the basis of the detection result by the second optical conversion element.

Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.