Abstract: There is provided a radiation solid state reader having a phosphor absorbing radiation and emitting light and a plurality of pixels arranged in a two-dimensional matrix. Each of the pixels has a photoelectric conversion element for receiving the emitted light and for generating charge and a reading transistor for reading signal from the photoelectric conversion element. The photoelectric conversion element is disposed between the phosphor and the reading transistor. There is also provided a radiation solid state reader having a plurality of pixels arranged in a two dimensional matrix for reading a signal from a direct conversion type sensor absorbing radiation and generating charge. Each of the pixels includes an amplifying circuit for amplifying a signal from the direct conversion type sensor.

Abstract: A semiconductor device comprises at least a semiconductor layer including source and drain areas of a first conductive type and of a high impurity concentration and a channel area positioned between the source and drain areas, an insulation layer covering at least the channel area, and a gate electrode positioned close to the insulation layer. The channel area at least comprises a first channel area of a low resistance, positioned close to the insulation layer and having a second conductive type opposite to the first conductive type, and a second channel area of a high resistance, having the first conductive type and positioned adjacent to the first channel area.

Abstract: An image pickup apparatus or a radiation image pickup apparatus according to the present invention includes: a plurality of pixels which are two-dimensionally arranged on a substrate, each of the plurality of pixels including a set of a semiconductor conversion element that converts an incident electromagnetic wave into an electrical signal and a switching element connected with the semiconductor conversion element; a drive wiring which is commonly connected with the plurality of switching elements arranged in a direction; and a signal wiring which is commonly connected with the plurality of switching elements arranged in a direction different from the direction, the switching element including a first semiconductor layer, the semiconductor conversion element being formed after the switching elements are formed and including the second semiconductor layer formed after the first semiconductor layer is formed, in which the semiconductor conversion element has an electrode formed outside a region in which two of

Abstract: An object of this invention is to appropriately execute automatic exposion control. A radiographic apparatus has a radiographic image detection section (62) which detects the radiographic image of an object and a plurality of radiation dose detection sections (631-634) which detect the dose of radiation from the object. The radiographic apparatus includes a control section (61) which decides the mode of use of the outputs from the plurality of radiation dose detection sections (631-634) on the basis of the arrangement state of the radiographic apparatus.

Abstract: Image sensing radiation detection pixels of m (columns)×n (rows) are divided into, e.g., 72 pixel regions. Image sensing radiation detection pixels belonging to one pixel region are connected to the same read TCP and driving TCP. For example, three regions (AEC radiation detection regions) of the 72 pixel regions have a plurality of AEC radiation detection pixels. An AEC radiation detection pixel has a TFT sensor. Spare wiring lines for the AEC radiation detection pixels are arranged at two side portions of each read TCP. Each spare wiring line is connected to a predetermined circuit in a read device to connect the AEC radiation detection pixels to the predetermined circuit so that the AEC circuit is operated.

Abstract: Provided are imaging apparatus and radiation detecting apparatus with high sensitivity. An imaging apparatus has a photoelectric conversion layer 16 for converting incident light into charge, on an insulating substrate, an electrode layer 17 formed on the photoelectric conversion layer 16, and a protective layer 37 formed on the electrode layer 17, and satisfies relations of na−nb≦1.5 and nb−nc≦1.5 where na is a refractive index of the photoelectric conversion layer 16, nb a refractive index of the electrode layer 17, and nc a refractive index of the protective layer 37.

Abstract: This invention discloses a radiation imaging apparatus. According to the radiation imaging apparatus of this invention, any separate AEC sensor need not be prepared. If an AEC sensor is arranged on the radiation imaging apparatus, as in the prior art, the image quality degrades because an image sensor receives radiation that is attenuated by the AEC sensor. This can be avoided in this invention. Additionally, the apparatus main body can be made compact. To accomplish this, the radiation imaging apparatus has a first optical conversion element that converts incident radiation into an electrical signal, and generates image information on the basis of the electrical signal output from the first optical conversion element. Below a portion that is aligned to the gap between the first optical conversion elements, a plurality of second optical conversion elements which detect the incident amount of the radiation from the gap are formed.

Abstract: An X-ray imaging apparatus including an X-ray generation means for emitting X-rays, and an X-ray detector on which a grid selected from a plurality of different types of grids is removably mountable. The X-ray detector receives the X-rays emitted from the X-ray generation means, and obtains an X-ray image. The X-ray detector includes an automatic exposure control (AEC) detector for detecting the quantity of X-rays emitted from the X-ray generation means and for outputting a signal based on the detected quantity. The X-ray imaging apparatus also includes a control means for controlling the X-ray generation means and the AEC detector, where the control means controls the X-ray generation means based on the signal output from the AEC detector, and where the control means controls the AEC detector using correction data to correct an exposure detection element forming a part of the AEC detector.

Abstract: There is provided a radiation image pick-up device with a large size, in which detection efficiency, light utilization efficiency, and a yield can be improved, high speed operation can be realized, and a signal to noise ratio is improved. The radiation image pick-up device includes a phosphor for converting radiations into light, a semiconductor layer for converting the radiations into charges and converting the light from the phosphor into charges, TFTs for reading signals corresponding to stored charges, and output lines for outputting the charges read by the TFTs. The semiconductor layer, charge storage capacitors, the TFTs, and the output lines are formed respectively on an insulating substrate. The phosphor is laminated on the semiconductor layer and the semiconductor layer is laminated on a formation surface of the charge storage capacitors, the TFTs, and the output lines respectively on the insulating substrate.

Abstract: There is provided a radiation image pick-up device with a large size, in which detection efficiency, light utilization efficiency, and a yield can be improved, high speed operation can be realized, and a signal to noise ratio is improved. The radiation image pick-up device includes a phosphor for converting radiations into light, a semiconductor layer for converting the radiations into charges and converting the light from the phosphor into charges, TFTs for reading signals corresponding to stored charges, and output lines for outputting the charges read by the TFTs. The semiconductor layer, charge storage capacitors, the TFTs, and the output lines are formed respectively on an insulating substrate. The phosphor is laminated on the semiconductor layer and the semiconductor layer is laminated on a formation surface of the charge storage capacitors, the TFTs, and the output lines respectively on the insulating substrate.

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including: a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element.

Abstract: This invention has as its object to realize a radiation image sensing apparatus which can adjust (AEC-controls) the amount of incoming light or dose without requiring high-speed driving. Since a second photoelectric conversion element (108) which is used to detect the total dose of radiation that enters a conversion unit is formed independently of pixels having first conversion elements (101) that are formed in the conversion unit on a single substrate, the need for reading out the outputs from the first conversion elements (101) at high speed for the purpose of adjustment of the dose of incoming radiation can be obviated, and another sensor used to adjust the dose need not be added, thus simplifying the structure of a radiation image sensing apparatus.

Abstract: The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.

Abstract: The invention is to realize a radiation detecting element of an excellent sensitivity to the incident radiation, and to provide a radiation image pickup apparatus showing a low dark current generating noises and having a satisfactory resolution. A carrier diffusion preventing layer is provided between a charge emitting layer 20 and at least either of a 10 first semiconductor layer and a second semiconductor layer 20 to prevent a carrier diffusion from such either semiconductor layer to the charge emitting layer, thereby reducing the dark current caused by the trap level. It is thus possible to improve the carrier capture efficiency and to realize the radiation detecting element of a high sensitivity.

Abstract: In order to prevent a scintillator of an information reading apparatus from being broken in a bonding step, a protective layer is formed so as to cover the scintillator so that the shape of the scintillator is not broken.

Abstract: To prevent an output voltage from lowering due to increase of a parasitic capacitance when arranging a plurality of photoelectric conversion elements, a photoelectric conversion element, a reading field-effect transistor having a gate for receiving signal charges generated in the photoelectric conversion element and a source and a drain for reading a signal corresponding to signal charges accumulated in the gate, selection switch means set between the reading field-effect transistor and a power supply, and reset means for resetting the gate are provided on an insulating support body.

Abstract: An electric field is applied to a charge emitting layer. The charge emitting layer absorbs radioactive rays generated by a radiation source, converts the rays into electric charges, and emits the converted charges. The electric field has an intensity satisfying a lower limit of a specification value of a carrier capturing efficiency and an upper limit of a specification value of a dark current density. A dark current at a trap level can be lowered, a carrier capturing efficiency can be improved, and radioactive rays can be detected with small noises and at a high sensitivity. It is possible to reliably detect incident radioactive rays and form an image of incident radioactive rays.

Abstract: A signal transfer apparatus of high S/N ratio and high read speed suitable for use in photoelectric conversion circuit units with a large pixel count and an imaging apparatus and radiation image pick-up system. The signal transfer apparatus, comprises a plurality of terminals connected to a plurality of signal sources, and a read circuit unit for converting signals received from the terminals into series signals and outputting the resulting series signals. The read circuit unit comprises first operational amplifiers connected to the terminals, and second operational amplifiers for receiving outputs of the first operational amplifiers. And each of the first operational amplifiers comprises an inverting input terminal connected to each of the terminals, an output terminal with an integral capacitor and switch being connected in parallel between it and the inverting input terminal, and a non-inverting input terminal supplied with a reference voltage.

Abstract: To prevent an output voltage from lowering due to increase of a parasitic capacitance when arranging a plurality of photoelectric conversion elements, a photoelectric conversion element, a reading field-effect transistor having a gate for receiving signal charges generated in the photoelectric conversion element and a source and a drain for reading a signal corresponding to signal charges accumulated in the gate, selection switch means set between the reading field-effect transistor and a power supply, and reset means for resetting the gate are provided on an insulating support body.