Abstract: Ferromagnetic layers (18, 22) have magnetizations oriented to such directions as to cancel each other, so that the net magnetization of the ferromagnetic layers (18, 22) is substantially zero. That is, the ferromagnetic layers (18, 22) are exchange-coupled with a nonmagnetic layer (20) interposed therebetween, thereby forming an SAF structure. Since the net magnetization of the ferromagnetic layers (18, 22) forming the SAF structure is substantially zero, the magnetization of a recording layer (RL) is determined by the magnetization of a ferromagnetic layer (14). Therefore, the ferromagnetic layer (14) is made of a CoFeB alloy having high uniaxial magnetic anisotropy, and the ferromagnetic layers (18, 22) are made of a CoFe alloy having a high exchange-coupling force.

Abstract: In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process.

Abstract: A magnetic field detector includes: a magnet; a magnetic resistance element used for detection having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a magnetic resistance element used for reference having the substantially same layer structure as that of the magnetic resistance element used for detection, wherein a magnetic field, the magnetic intensity of which is higher than the saturation magnetic field, is impressed by the magnet in the direction which is felt by the ferromagnetic layer of the magnetic resistance element used for reference.

Abstract: A magnetic field detection apparatus capable of changing the detection range and detection sensitivity as desired for a specific application is disclosed. A magnetoresistance effect element is applied a bias magnetic field and an external magnetic field. The bias magnetic field and the external magnetic field are generated on the same straight line, and therefore the bias magnetic field functions to hamper the external magnetic field applied to the magnetoresistance effect element. Thus, the magnetization of the free layer of the magnetoresistance effect element is suppressed, and the rotational angle of the magnetized vector is reduced. As a result, the characteristic of the resistance value of the magnetoresistance effect element to the external magnetic field is shifted by an amount equivalent to the bias magnetic field.

Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Abstract: A plurality of interconnection layers arranged at the same level are connected by an anti-diffusion insulating layer in a lateral direction. Interconnection layers arranged at different levels are electrically connected through a plug portion in a vertical direction. A second interlayer film is arranged only at a region directly below the interconnection layer and connects the interconnection layer with the anti-diffusion insulating layer in the vertical direction. A hollow space or an interlayer film with a low dielectric constant of at most 2.5 is located laterally adjacent to each of the plurality of interconnection layers. Thus, a semiconductor device having a multilayer interconnection structure that can improve both the strength of the interconnection layers and the transmission speed of signals, and a method of manufacturing the semiconductor device can be obtained.

Abstract: A high-frequency current detector of a plasma processing apparatus detects a high-frequency current produced when high-frequency power in the range that does not cause generation of plasma in a chamber is supplied from a high-frequency power supply source to the chamber. The high-frequency current detector outputs the detected high-frequency current to a computer. The computer compares the high-frequency current received from the high-frequency current detector with a reference high-frequency current. When the received high-frequency current matches the reference high-frequency current, the computer determines that the process performance is normal. Otherwise, the computer determines that the process performance is abnormal. In this way, high-frequency characteristics specific to the apparatus are detected and the process performance are evaluated based on the detected high-frequency characteristics.

Abstract: A plasma processing apparatus includes a reaction chamber for processing a workpiece with plasma which is generated by using one or more gases, a gas supplying means which pulsatively supplies the gases to the reaction chamber, and an exhaust means for exhausting the reaction chamber, wherein a gas supplying direction by said gas supplying means is arranged to correspond with an exhausting direction by said exhausting means.

Abstract: In a wafer treatment apparatus, a hydrofluoric acid gas supply pipe and an evacuation pipe are connected to a chamber storing a wafer for performing prescribed treatment. A control part is provided for controlling supply of hydrofluoric acid gas. The control part sets a time for supplying the hydrofluoric acid gas into the chamber to be longer than a time up to starting of etching of a reaction product and shorter than a time up to starting of etching of a gate insulator film. Thus, only the reaction product can be substantially etched without etching the gate insulator film.

Abstract: A plasma processing apparatus mainly comprises a processing chamber (10) formed by a vacuum vessel, a magnetic field forming coil (80) arranged around the processing chamber for forming a rotating magnetic field and gas supply means (101) supplying various gases to the processing chamber (10). The processing chamber (10) is divided into a reaction chamber (44) forming plasma with a partition wall (43) and a buffer chamber (45) discharging externally supplied gases with pressure difference. The reaction chamber (44) includes a high-frequency electrode arranged oppositely to the buffer chamber (45). The gas supply means (101) includes pulse gas valves (63a and 63b) for pulsatively supplying gases to the processing chamber (10). Thus provided are a plasma processing method and a plasma processing apparatus capable of uniformly processing a wafer having a large diameter and reducing RIE lag with respect to a fine etching pattern.

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically of a polarity identical in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which an object to be processed is placed. Arrangement is provided so that the polarity of magnets located adjacent radially is opposite. An insulation substrate is provided between a partition panel and a processing chamber to electrically insulate a plasma generation chamber. Direct current voltage is applied in a pulsive manner to the plasma generation chamber. Thus, a plasma processing apparatus can be provided that allows formation of plasma uniformly over a large area, and processing of a specimen of a large diameter uniformly.

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically with the same polarity in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which a specimen is placed. Arrangement is provided so that the magnets located adjacent radially have opposite polarity. Furthermore, permanent magnets are arranged at the outer circumference of a vacuum vessel corresponding to a plasma generation chamber portion. A plasma processing apparatus can be provided that allows formation of uniform plasma over a large area and uniform processing of a specimen of a large diameter.

Abstract: A plasma is supplied from a plasma source to a space between an upper electrode plate and a lower electrode plate disposed opposite to and in parallel with the upper electrode plate when producing a plasma in the space between the electrode plates for plasma processing by applying radio-frequency power to the electrode plates. The plasma source produce a plasma by inductively coupled discharge, radio-frequency discharge or microwave discharge. A plasma processing apparatus is obtained which is capable of producing a parallel-plate plasma by discharge in a space of a relatively low pressure and is capable of processing a large diameter workpiece uniformly at a high processing rate.

Abstract: A plasma processing apparatus capable of forming plasma uniformly throughout a large surface area whereby a sample having a large diameter can be uniformly processed. The plasma processing apparatus has a first electrode 3 on which a workpiece 2 is placed, a second electrode 4 located to face the first electrode 3, and a plurality of ring-shaped permanent magnets 11 each having the same polarity in their circumferential direction, and the magnets are disposed concentrically or the outer side of the second electrode 4 so that the polarities opposing in the radial direction of adjacent magnets 11 are opposite to each other.

Abstract: A microwave plasma apparatus comprises a discharge chamber for generating a plasma. A dielectric plate is placed on a surface of the discharge chamber. A microwave circuit surrounds the longitudinal side surface of the dielectric plate and the microwave circuit is adapted to couple the signal propagating therein to the dielectric plate, whereby a microwave electric field is formed within the discharge chamber to generate a plasma therein. The microwave circuit may comprise a rectangular waveguide, and a part of a wall surface of the rectangular waveguide is utilized as a terminal portion.

Abstract: A microwave discharge light source device in which one side of a discharge space in which a plasma emission takes place is defined by a transparent dielectric member. A transparent microwave reflecting member is disposed in a position such as to face the discharge space through the dielectric member. A microwave having an electric field component in the direction of thickness of the dielectric member is introduced into the dielectric member through the coupling at an end surface of the dielectric member so that a microwave electric field is formed in the discharge space, and so that the plasma emission medium emits light by electric discharge. The light thus emitted is extracted through the transparent microwave reflecting member.

Abstract: A power supply circuit for a magnetron adapted to supply microwave energy to an electrodeless discharge bulb is disclosed. The circuit includes a rectifier coupled across a commerical AC voltage source, a filter for smoothing the output of the rectifier, an inverter for converting the DC voltage supplied from the filter into a high frequency AC voltage, a step-up transformer for stepping up the high frequency AC voltage outputted from the inverter, and a rectifier which rectifies the high voltage AC output of the transformer into a unidirectional voltage which is supplied to the magnetron. The inverter switching is controlled by a pulse width modulation control circuit to maintain the magnetron output power at a predetermined level.

Abstract: A gas laser device comprises a discharge space in which a laser gas is excited by electric discharge, the discharge space being in the form of a slab whose section perpendicular to a laser optical axis has a longer side and a shorter side; and laser resonator mirrors disposed at both ends of the discharge space, respectively. The laser resonant mirrors constitute a negative branch unstable resonator in a first dimension of longer side of the discharge space section, and a laser beam is obtained at one end of the longer side of the discharge space section.

Abstract: A power supply circuit for a magnetron adapted to supply microwave energy to an electrodeless discharge bulb is disclosed. The circuit comprises a rectifier coupled across a commercial AC voltage source, a filter for smoothing the output of the rectifier, an inverter for converting the DC voltage supplied from the filter into a high frequency AC voltage, a step-up transformer for stepping up the high frequency AC voltage outputted from the inverter, and a rectifier which rectifies the high voltage AC output of the transformer into a unidirectional voltage which is supplied to the magnetron. The inverter switching is controlled by a pulse width modulation control circuit to maintain the magnetron output power at a predetermined level.