Abstract: A method for producing a heterophasic propylene polymerization material, including: a first polymerization step of forming a polymer (I) by polymerizing propylene in presence of a contact product and an olefin polymerization catalyst obtained by bringing an aluminum compound into contact with an olefin polymerization-use solid catalyst component containing a titanium atom, a magnesium atom, a halogen atom, and an internal electron donor; and a second polymerization step of forming a polymer (II) by copolymerizing propylene with at least one kind selected from the group consisting of ethylene and C4-12 ?-olefins in presence of the polymer (I). The contact product can be obtained by bringing an aluminum compound into contact with a specific antioxidant.

Abstract: The present invention provides a liquid material containing a compound having a fluorocarbon chain and a volatile solvent, wherein the compound having the fluorocarbon chain is one of a compound having in a main chain a perfluoro(poly)ether group whose carbon number is 2 to 4, and an acrylic compound having in a side chain a perfluoroalkyl group whose carbon number is 4 to 8.

Abstract: A pattern-exposure-apparatus includes illumination-unit that irradiates illumination-light to spatial-light-modulating-element including a plurality of micro-mirrors that are driven to switch between ON-state and OFF-state based on drawing-data, and projection-unit that allows incidence of reflected light from the micro-mirrors of the spatial-light-modulating-element in the ON-state as image-forming-light-flux and that projects image of pattern corresponding to the drawing-data to a substrate.

Abstract: A negative electrode material for a secondary battery includes a negative electrode active material and a carbon nanotube, wherein the negative electrode active material includes graphite and a material including a silicon element, and the carbon nanotube has an average fiber diameter of 0.5 nm to 6 nm and an average fiber length of 1.2 ?m to 8 ?m. A secondary battery includes a negative electrode including the negative electrode material for a secondary battery, a positive electrode, a separator interposed between the positive electrode and the negative electrode, and an electrolyte.

Abstract: A negative electrode for a non-aqueous electrolyte secondary battery includes a negative electrode current collector, and a negative electrode mixture layer supported on the negative electrode current collector. The negative electrode mixture layer includes a silicon material, a carbon material capable of electrochemically absorbing and releasing lithium ions, and electrically conductive fibers. The silicon material has a lithium-ion conductive phase, and silicon particles dispersed in the lithium-ion conductive phase. When the negative electrode mixture layer is divided into two layers, a first region and a second region, having the same thickness, the first region is nearer to the negative electrode current collector than the second region is, the silicon material is contained more in the second region than in the first region, and the conductive fibers are contained in the second region.

Abstract: This negative electrode for secondary batteries is provided with a negative electrode mixture that contains a negative electrode active material, an additive and a conductive agent. The negative electrode active material contains an Si-containing material; the additive contains an alkali metal sulfate salt; and the conductive agent contains carbon nanotubes. The content of the alkali metal sulfate salt in the negative electrode mixture is from 0.0025% by mass to 0.1% by mass relative to the total mass of the negative electrode active material.

Abstract: According to the present invention, an image recognition system calculates importance of a feature for each target shape recognized in an image and for each type of feature, and determines correctness of a recognition result by comparing the importance with a statistic for each type of feature, for each target shape.

Abstract: In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage.

Abstract: A negative electrode for a secondary battery including a negative electrode active material capable of absorbing and releasing lithium ions. The negative electrode active material includes a first carbon material as a main component, and includes a second carbon material and a silicon-containing material which are present between particles of the first carbon material. The first carbon material has an average particle diameter A, the second carbon material has an average particle diameter B, and the silicon-containing material has an average particle diameter C, satisfying A>C?B.

Abstract: A negative electrode for a non-aqueous electrolyte secondary battery includes a negative electrode material mixture including a negative electrode active material capable of electrochemically absorbing and desorbing lithium ions, a carbon nanotube; and an acrylic resin. The negative electrode active material includes a composite material including a silicate phase, and silicon particles dispersed in the silicate phase, and the silicate phase includes at least one selected from the group consisting of alkali metal elements and Group 2 elements.

Abstract: The present disclosure provides a wafer inspection technology that involves less degradation of the image quality even when an object to be observed has a variation in height due to warpage, etc. of a wafer. This wafer inspection apparatus obtains an image with less degradation by: adjusting the focal point of an observation optical system to a height measured by a height sensor for measuring wafer surface heights; and further, correcting a switching signal for a CCD line sensor on the basis of stage position data and optical magnification data corresponding to the height so as to make a correction corresponding to the wafer surface height.

Abstract: Provided is a quantification method for evaluating the quality of a sample on the basis of a mirror electron image acquired by a mirror electron microscope. In this invention, a mirror electron image is expressed numerically through counting of the brightness values of each pixel composing the mirror electron image, the creation of a brightness histogram, and the calculation, from the distribution of the brightness histogram, of a standard deviation. If brightness contrast is formed on the mirror electron image by, for example, a scratch on or latent damage in a sample, because the brightness values of the pixels will fluctuate, there will be more variation in the brightness values than in an image obtained from a satisfactory sample with no defects, and this will result in the brightness values of the mirror electron image having a larger standard deviation.

Abstract: It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substrate 101 for evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentations 104 that are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.

Abstract: Provided is a mirror electronic inspection device which is a defect inspection device for detecting a defect of a semiconductor substrate or the like, and evaluates temperature dependence of the defect in a vacuum. A heating stage including a heater (heat generating element) covered with an electrically insulated insulating material, a heater base on which a sample is mounted, and a heat shielding plate and equipotential surface is mounted on a moving stage installed in a sample chamber of a device via an electrically insulated and thermally insulated fixing member. A heater power supply is connected to the heater (heat generating element), and a sample application power supply is connected to the heater base. The heater power supply and the sample application power supply are electrically separated.

Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages.

Abstract: The present invention relates to a composition comprising a nanosized light emitting material, and method for preparing of said composition. The present invention further relates to a light luminescent medium, a light emitting device, the present invention further more relates to method for preparing of a composition and to method for preparing of a light emitting medium.

Abstract: The present invention relates to a formulation comprising at least a polymer, a particle, and an organic solvent.

Abstract: A defect inspection device includes a sample support member, a negative voltage, an imaging element, an ultraviolet light source, a movement stage, and a control device. The control device controls the movement stage such that a portion of a linear part included in the image or a location on an extensional line of the linear part is positioned at a specific location in an irradiated region of the electron beam. The control device also repeats the control of the movement stage until an end of the linear part is positioned within the irradiated region of the electron beam.

Abstract: This nonaqueous electrolyte secondary battery is provided with a positive electrode, a negative electrode and a non-aqueous electrolyte. The non-aqueous electrolyte contains: a non-aqueous solvent that contains a fluorine-containing cyclic carbonate; an isocyanuric acid derivative such as triallyl isocyanurate; and a cyclic carboxylic acid anhydride such as diglycolic acid anhydride.

Abstract: The present disclosure provides a wafer inspection technology that involves less degradation of the image quality even when an object to be observed has a variation in height due to warpage, etc. of a wafer. This wafer inspection apparatus obtains an image with less degradation by: adjusting the focal point of an observation optical system to a height measured by a height sensor for measuring wafer surface heights; and further, correcting a switching signal for a CCD line sensor on the basis of stage position data and optical magnification data corresponding to the height so as to make a correction corresponding to the wafer surface height.