Abstract: The present disclosure provides a wafer inspection technology that involves less degradation of the image quality even when an object to be observed has a variation in height due to warpage, etc. of a wafer. This wafer inspection apparatus obtains an image with less degradation by: adjusting the focal point of an observation optical system to a height measured by a height sensor for measuring wafer surface heights; and further, correcting a switching signal for a CCD line sensor on the basis of stage position data and optical magnification data corresponding to the height so as to make a correction corresponding to the wafer surface height.

Abstract: A purpose of the present invention is to provide a charged particle beam apparatus that performs apparatus adjustment based on a proper evaluation of a beam. To achieve the abovementioned purpose, with the present invention, proposed is a charged particle beam apparatus comprising: an irradiation optical system including a lens for converging charged particle beams emitted from a charged particle source; and an imaging optical system for imaging the charged particles obtained by irradiating the charged particle beams toward a sample on an imaging element, wherein the charged particle beam apparatus comprises a control apparatus for controlling the lens, and the control apparatus evaluates for each lens condition the size of a specific brightness area obtained by the charged particle beam being made to reach the sample, and selects the lens condition for which the size information fulfills a designated condition.

Abstract: Provided is a non-aqueous electrolyte secondary battery comprising: a positive electrode including a positive electrode active material; a negative electrode; and a non-aqueous electrolyte, wherein the positive electrode active material has a composite oxide containing Ni and Li, the proportion of Ni being at least 33 mol % with respect to the total number of moles of metal elements other than Li, and the non-aqueous electrolyte contains: a non-aqueous solvent containing a fluorine-containing cyclic carbonate; an isocyanurate derivative such as triallyl isocyanurate; and a cyclic carboxylic anhydride such as a succinic anhydride.

Abstract: A viologen compound is a crystalline compound including a heterocyclic moiety in which a carboxylate of an alkali metal is bound directly or indirectly to both ends of a basic skeleton containing 4,4?-bipyridinium and an anionic moiety that pairs with 4,4?-bipyridinium. The viologen compound can be used, for example, as a negative electrode active material for an electricity storage device including a negative electrode containing the negative electrode active material, a positive electrode containing a positive electrode active material capable of giving and receiving anions, and an ion-conducting medium that is disposed between the positive electrode and the negative electrode and conducts anions.

Abstract: It is necessary to guarantee performance by quantitatively evaluating the defect detection sensitivity of an inspection device for using the mirror electron image to detect defect in a semiconductor substrate. The size and position of accidentally formed defects are random, however, and this type of quantitative evaluation has been difficult. This semiconductor substrate 101 for evaluation is for evaluating the defect detection sensitivity of an inspection device and comprises a plurality of first indentations 104 that are formed through the pressing, with a first pressing load, of an indenter having a prescribed hardness and shape into the semiconductor substrate for evaluation. Further, a mirror electron image of the plurality of first indentations of the semiconductor substrate for evaluation is acquired, and the defect detection sensitivity of an inspection device is evaluated through the calculation of the defect detection rate of the plurality of first indentations in the acquired mirror electron image.

Abstract: The purpose of the present invention is to provide a defect inspection device that can evaluate a defect having a long latent flaw with high precision. A defect inspection device of the present invention is characterized by being provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; an imaging element at which an image of electrons (mirror electrons) reflected without reaching the sample is formed via a retarding electric field formed on the sample; an ultraviolet light source that emits an ultraviolet light toward the sample; a movement stage that moves the sample support member; and a control device that controls the movement stage.

Abstract: In order to optimize defect contrast in a charged particle beam device that inverts charged particles directly above a sample and observes the electrons, this charged particle beam device is provided with a charged particle source, an electron gun control device which applies a first voltage to the charged particle source, a substrate voltage control device which applies a second voltage to a sample, an image forming optical system which includes an imaging lens for imaging charged particles incident from the direction of the sample, a detector which includes a camera for detecting the charged particles, and an image processing device which processes the detected signal, wherein the imaging optical system is configured so as not to image secondary electrons emitted from the sample, but forms an image with mirror electrons bounced back by the electric field formed on the sample by means of the potential difference between the first and the second voltages.

Abstract: In an electron beam device provided with two columns including an irradiation optical system and an imaging optical system, a photoelectron image for use in adjusting the irradiation optical system is made sharper. The electron beam device includes: an irradiation optical system which irradiates a sample placed on a stage with an electron beam; a light irradiation unit 50 which irradiates the sample with light containing ultraviolet rays; a sample voltage control unit 44 which applies a negative voltage to the sample so that, before the electron beam reaches the sample, the electron orbit inverts; and an imaging optical system which acquires a mirror electron image by forming an image of mirror electrons reflected by application of the negative voltage.

Abstract: In order to suppress deformation of a flexible substrate, a deposition method according to an embodiment of the present invention includes pre-treatment of exhausting a vacuum chamber until a water partial pressure inside the vacuum chamber becomes equal to or lower than a desired value. Plasma is generated by applying an alternate current (AC) voltage between a first chromium target and a second chromium target, the first chromium target and the second chromium target being arranged inside the vacuum chamber. A chromium layer is formed on a deposition surface of a flexible substrate arranged facing the first chromium target and the second chromium target.

Abstract: An electricity storage device 20 includes a positive electrode 22, a negative electrode 23 containing a layered structure of an aromatic dicarboxylic acid metal salt as an electrode active material, and an ion conducting medium 27 capable of conducting carrier ions. The layered structure is formed by spray-drying a solution prepared by containing aromatic dicarboxylic acid anions and alkali metal cations by using a spray-drying apparatus.

Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system.

Abstract: A purpose of the present invention is to provide a charged particle beam apparatus that performs apparatus adjustment based on a proper evaluation of a beam. To achieve the abovementioned purpose, with the present invention, proposed is a charged particle beam apparatus comprising: an irradiation optical system including a lens for converging charged particle beams emitted from a charged particle source; and an imaging optical system for imaging the charged particles obtained by irradiating the charged particle beams toward a sample on an imaging element, wherein the charged particle beam apparatus comprises a control apparatus for controlling the lens, and the control apparatus evaluates for each lens condition the size of a specific brightness area obtained by the charged particle beam being made to reach the sample, and selects the lens condition for which the size information fulfills a designated condition.

Abstract: The present invention relates to a composition comprising a nanosized light emitting material, and method for preparing of said composition. The present invention further relates to a light luminescent medium, a light emitting device, the present invention further more relates to method for preparing of a composition and to method for preparing of a light emitting medium.

Abstract: This nonaqueous electrolyte secondary battery is provided with a positive electrode, a negative electrode and a non-aqueous electrolyte. The non-aqueous electrolyte contains: a non-aqueous solvent that contains a fluorine-containing cyclic carbonate; an isocyanuric acid derivative such as triallyl isocyanurate; and a cyclic carboxylic acid anhydride such as diglycolic acid anhydride.

Abstract: The carbon porous body of the present disclosure includes micropores and mesopores. A micropore volume determined at a temperature of 77K by as plot analysis of a nitrogen adsorption isotherm is 100 (cm3 (STP)/g) or more. A BET specific surface area determined from the nitrogen adsorption isotherm is 1,000 m2/g or more. The derivative of the nitrogen adsorption isotherm is 300 (cm3 (STP)/g) or more over the range where relative pressure P/P0 in the nitrogen adsorption isotherm is from 0.10 to 0.20 inclusive, and the derivative of the nitrogen adsorption isotherm is 200 (cm3 (STP)/g) or more over the range where the relative pressure P/P0 in the nitrogen adsorption isotherm is from 0.20 to 0.95 inclusive. The amount of nitrogen adsorbed when the relative pressure P/P0 in the nitrogen adsorption isotherm is 0.98 is 1,200 (cm3 (STP)/g) or more.

Abstract: A viologen compound is a crystalline compound including a heterocyclic moiety in which a carboxylate of an alkali metal is bound directly or indirectly to both ends of a basic skeleton containing 4,4?-bipyridinium and an anionic moiety that pairs with 4,4?-bipyridinium. The viologen compound can be used, for example, as a negative electrode active material for an electricity storage device including a negative electrode containing the negative electrode active material, a positive electrode containing a positive electrode active material capable of giving and receiving anions, and an ion-conducting medium that is disposed between the positive electrode and the negative electrode and conducts anions.

Abstract: A device including an imaging-type or a projection-type ion detection system and being capable of performing observation or inspection at high speed with an ultrahigh resolution in a sample observation device using an ion beam is provided. The device includes a gas field ion source that generates an ion beam, an irradiation optical system that irradiates a sample with the ion beam, a potential controller that controls an accelerating voltage of the ion beam and a positive potential to be applied to the sample and an ion detection unit that images or projects ions reflected from the sample as a microscope image, in which the potential controller includes a storage unit storing a first positive potential allowing the ion beam to collide with the sample and a second positive potential for reflecting the ion beam before allowing the ion beam to collide with the sample.

Abstract: The objective of the present invention is to propose a charged particle beam device with which an imaging optical system and an irradiation optical system can be adjusted with high precision. In order to achieve this objective, provided is a charged particle beam device comprising: a first charged particle column which serves as an irradiation optical signal; a deflector that deflects charged particles which have passed through the inside of the first charged particle column toward an object; and a second charged particle column which serves as an imaging optical system.

Abstract: The purpose of the present invention is to provide a defect inspection device with which it is possible to detect a latent flaw with a high precision or at a high speed. In order to fulfill this purpose, this defect inspection device is provided with: a sample support member that supports a sample irradiated by an electron beam emitted from an electron source; a negative voltage applying power source for forming a retarding electric field in relation to the electron beam that irradiates the sample supported by the sample support member; an imaging element at which an image of electrons reflected without reaching the sample is formed via the retarding electric field; an ultraviolet light source that emits an ultraviolet light toward the sample; and a computation processing device that processes an image generated on the basis of a signal obtained by the imaging element.

Abstract: The present invention relates to a polarized light emissive device comprising a plural of fluorescent semiconductor quantum rods, and to a preparation thereof. The invention further relates to a use of the polarized light emissive device in optical devices, and to an optical device comprising the polarized light emissive device.