Abstract: A tape affixing system capable of automatically switching or replacing a dicing tape. A tape affixing system 1 includes a stocker 5 that stores tape magazines 4 each accommodating a dicing tape DT wound in a roll shape, an affixing apparatus 3 which includes movable guide rollers 32a and 32b, fixed guide rollers 33a and 33b, and a knife plate 35 that regulate a reel-out region R of the dicing tape DT to a predetermined track, on which each of the tape magazines 4 is replaceably mountable, and which affixes the dicing tape DT to a dicing frame DT and a workpiece W, and a first conveyance robot 6 that delivers the tape magazine 4 between the stocker 5 and the affixing apparatus 3.

Abstract: A processing device that alleviates the influence of rough grinding and performs fine grinding and processes the work with a satisfactory precision. An index table includes a plurality of chucks for holding a work and transports the work to a rough grinding stage with a rough grinding means for rough grinding the work, a medium grinding stage with a medium grinding means for medium grinding the work, and a fine grinding stage with a fine grinding means for fine grinding the work. A first column extends over the index table and one of the rough grinding means or the fine grinding means is installed. A second column extends over the index table and is independent from the first column, and the medium grinding means is installed and the other one of the rough grinding means or the fine grinding means is arranged parallel to the medium grinding means.

Abstract: A processing device and method for safely processing a wafer having bumps formed on a surface thereof. A processing device is provided with: a chuck capable of holding a bump region of a wafer; a support ring having a support surface for supporting a bend region which extends from the bump region to an outer peripheral region and in which a film is bent, the support ring capable of supporting the outer peripheral region of the wafer; and a chuck table in which the chuck is housed substantially centrally and the support ring is housed around the chuck.

Abstract: Processing device for uniformly grinding wafers held by a plurality of chucks, and a method for setting the processing device. A processing device includes a coarse grinding device and a fine grinding device that are provided in a column straddling over a holding device. The holding device includes: an index table; chucks concentrically disposed about a rotation shaft; a first movable support unit on the outer peripheral side of the chuck in the radial direction of the index table; and a first fixed support unit on the inner peripheral side of the chuck in the radial direction of the index table. The first movable support unit is interposed between the index table and the chuck, and can be freely expanded and contracted in a vertical direction.

Abstract: A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.

Abstract: [Problem] To provide a processing device for grinding by suppressing brittle-mode grinding and stabilizing a wafer. [Solution] A processing device 1 is provided with: an index table 2 on which a wafer W is moved from a coarse grinding stage S2 to a fine grinding stage S3; a column 4 provided so as to span over the coarse grinding stage S2 and the fine grinding stage S3; a coarse grinding means 5 provided on the column 4 above the coarse grinding stage S2, the coarse grinding means 5 performing coarse-grinding processing on the wafer W; and a fine grinding means 6 provided on the column 4 over the fine grinding stage S3, the fine grinding means 6 performing fine-grinding processing on the wafer W.

Abstract: [Problem] To provide a processing device for uniformly grinding wafers held by a plurality of chucks, and a method for setting the processing device. [Solution] A processing device 1 includes a coarse grinding means 5 and a fine grinding means 6 that are provided in a column 4 straddling over a holding means 2. The holding means 2 includes: an index table 21; chucks 22 concentrically disposed about a rotation shaft 2a; a first movable support unit 24 disposed on the outer peripheral side of the chuck 22 in the radial direction of the index table; and a first fixed support unit 25 disposed on the inner peripheral side of the chuck 22 in the radial direction of the index table. The first movable support unit 24 is interposed between the index table 21 and the chuck 22, and can be freely expanded and contracted in a vertical direction.

Abstract: A grinding machine includes a rotatable spindle having a lower end to which a grindstone for grinding a wafer is attached; linear guides supporting the spindle slidably to a column; a spindle feeding mechanism feeding the spindle in a vertical direction; and constant-pressure feeding mechanism interposed between the spindle feeding mechanism and the column and suspending the spindle feeding mechanism. The constant-pressure feeding mechanism raises the spindle feeding mechanism in the vertical direction when a friction force acting on the grindstone is higher than a predetermined value.

Abstract: [Problem] To provide a processing device for grinding by suppressing brittle-mode grinding and stabilizing a wafer. [Solution] A processing device 1 is provided with: an index table 2 on which a wafer W is moved from a coarse grinding stage S2 to a fine grinding stage S3; a column 4 provided so as to span over the coarse grinding stage S2 and the fine grinding stage S3; a coarse grinding means 5 provided on the column 4 above the coarse grinding stage S2, the coarse grinding means 5 performing coarse-grinding processing on the wafer W; and a fine grinding means 6 provided on the column 4 over the fine grinding stage S3, the fine grinding means 6 performing fine-grinding processing on the wafer W.

Abstract: A grinding machine includes a rotatable spindle having a lower end to which a grindstone for grinding a wafer is attached; linear guides supporting the spindle slidably to a column; a spindle feeding mechanism feeding the spindle in a vertical direction; and constant-pressure feeding mechanism interposed between the spindle feeding mechanism and the column and suspending the spindle feeding mechanism.

Abstract: A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.

Abstract: A communication caused by applications that cannot be managed by an operator is operated on a mobile network, and is difficult to control. Therefore, burst traffic induced by the applications needs to be effectively detected, restricted, and controlled. A system has a terminal that monitors an update status of applications on a mobile network, periodically monitors the update status of the applications, extracts traffic of the applications from packets transmitted through the mobile network, summarized a traffic volume induced by the applications to detect the burst traffic generated when any application is updated, and controls the traffic of the applications when the burst is generated.

Abstract: A wafer grinding machine and a wafer grinding method are disclosed. A barrier (60) is arranged around a holding unit (29) to hold at least a wafer (40) with a film (11) attached on the front surface (41) thereof and with the back surface (42) thereof directed upward. The upper surface (61) of the barrier unit is ground to the position between the back surface of the wafer held by the holding unit and the boundary between the wafer and the film. Then, the wafer is ground while being held with the back surface thereof up by the holding unit. As a result, the film is prevented from coming off from the wafer at the time of grinding the back surface of the wafer. Further, when the wafer is ground, a fluid may be supplied into the gap between the barrier unit and the outer peripheral portion of the wafer held by the holding unit.

Abstract: A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).

Abstract: There is provided a film peeling device (100) for peeling a film (3) stuck onto a first portion (121) containing a peripheral portion of a wafer (20) and also stuck onto a second portion (122) located inward with respect to the first portion, comprising: a moving means (61, 62) for relatively moving the first portion and/or second portion so that the film of the first portion of the wafer can be located at a position higher than the film of the second portion; a tape drawing means (142) for drawing out a peeling tape (103) onto the film stuck onto the first and the second portion; and a peeling means (146) for peeling the film from the first and the second portion of the wafer when the peeling tape drawn out from the tape drawing means is pressed against only the first portion film and moved along the first portion. Due to the foregoing, it is possible to prevent the wafer from being damaged at the time of peeling the front surface protection film.

Abstract: A wafer processing method for processing a wafer (20) having bumps (B) formed on a front surface (21) comprises the steps of: holding on a table (51), a bump region-conforming member (40) that has an outer shape conforming only to a bump region (25) where said bumps are formed in the wafer; forming a resin layer (29) by applying resin around the bump region-conforming member up to a thickness equal to or greater than that of the bump region-conforming member; grinding the bump region-conforming member along with the resin layer to a predetermined thickness; removing the bump region-conforming member from the table to form a concave part (45) in the resin layer; applying a film (11) on the front surface of the wafer; and disposing the wafer in the concave part of the resin layer and holding the wafer on the table so that a back surface (22) of said wafer faces upward. After that, the back surface of the wafer can also be ground.

Abstract: A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).

Abstract: A current-mode controlled DC-DC converter includes a comparator comparing a first or second current detection signal with a first or second reference current that is based on an error voltage of a voltage detection signal, a pulse generator generating a first pulse signal whose ON time is longer than an interval between when the second current detection signal reaches a minimum value and when the second current detection signal reaches the second reference current, a pulse generator generating a second pulse signal whose ON time is longer than an interval between when the first current detection signal reaches a minimum value and when the first current detection signal reaches the first reference current, the second pulse signal being behind the first pulse signal by a half period, and a PWM circuit generating a first or second PWM signal according to the pulse signal and an output signal from the comparator, thereby turning on/off a switch.

Abstract: A semiconductor device 10 includes a first transistor 11 placed on a substrate 16, a second transistor 12 placed on the first transistor 11 via a heat radiation layer 17, a third transistor 13 placed on the substrate 16, and a fourth transistor 14 placed on the third transistor 11 via a heat radiation layer 17. The first transistor 11 has a first region corresponding to a region where the second transistor is placed, and a second region which is formed so as to surround the first region and in which the rate of area occupied by the emitter region in the base region is higher than in the first region. Likewise the first transistor 11, the third transistor 13 has a region in which the rate of area occupied by the emitter region in the base region is varied.

Abstract: A communication quality management equipment connected via a control line to a plurality of wireless base stations within a wireless access network, acquires quality information of a wireless line at a present position of a mobile terminal, resource information as to a wireless line of each of the wireless base stations, and use information as to a network line of each of the wireless base stations from the respective wireless base stations in a periodic manner, or in response to an instruction issued from the communication quality management equipment, and then judges a communication quality at each of the present positions of the mobile terminal; forms communication quality map information in which the judged communication qualities have been defined in correspondence with the positional information, and transmits the formed communication quality map information to the mobile terminal in accordance with a request from the mobile terminal.