Patents by Inventor Masaki Kanazawa

Masaki Kanazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10507561
    Abstract: A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: December 17, 2019
    Assignee: Tokyo Seimitsu Co., LTD
    Inventors: Masaki Kanazawa, Makoto Shimoda
  • Patent number: 10421172
    Abstract: [Problem] To provide a processing device for grinding by suppressing brittle-mode grinding and stabilizing a wafer. [Solution] A processing device 1 is provided with: an index table 2 on which a wafer W is moved from a coarse grinding stage S2 to a fine grinding stage S3; a column 4 provided so as to span over the coarse grinding stage S2 and the fine grinding stage S3; a coarse grinding means 5 provided on the column 4 above the coarse grinding stage S2, the coarse grinding means 5 performing coarse-grinding processing on the wafer W; and a fine grinding means 6 provided on the column 4 over the fine grinding stage S3, the fine grinding means 6 performing fine-grinding processing on the wafer W.
    Type: Grant
    Filed: November 28, 2016
    Date of Patent: September 24, 2019
    Assignee: Tokyo Seimitsu Co. LTD.
    Inventors: Makoto Shimoda, Masaki Kanazawa
  • Publication number: 20190210178
    Abstract: [Problem] To provide a processing device for uniformly grinding wafers held by a plurality of chucks, and a method for setting the processing device. [Solution] A processing device 1 includes a coarse grinding means 5 and a fine grinding means 6 that are provided in a column 4 straddling over a holding means 2. The holding means 2 includes: an index table 21; chucks 22 concentrically disposed about a rotation shaft 2a; a first movable support unit 24 disposed on the outer peripheral side of the chuck 22 in the radial direction of the index table; and a first fixed support unit 25 disposed on the inner peripheral side of the chuck 22 in the radial direction of the index table. The first movable support unit 24 is interposed between the index table 21 and the chuck 22, and can be freely expanded and contracted in a vertical direction.
    Type: Application
    Filed: September 11, 2017
    Publication date: July 11, 2019
    Inventors: Makato SHIMODA, Masaki KANAZAWA
  • Patent number: 10173296
    Abstract: A grinding machine includes a rotatable spindle having a lower end to which a grindstone for grinding a wafer is attached; linear guides supporting the spindle slidably to a column; a spindle feeding mechanism feeding the spindle in a vertical direction; and constant-pressure feeding mechanism interposed between the spindle feeding mechanism and the column and suspending the spindle feeding mechanism. The constant-pressure feeding mechanism raises the spindle feeding mechanism in the vertical direction when a friction force acting on the grindstone is higher than a predetermined value.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: January 8, 2019
    Assignee: Tokyo Seimitsu Co., Ltd.
    Inventors: Masaki Kanazawa, Kenji Igarashi
  • Publication number: 20180345439
    Abstract: [Problem] To provide a processing device for grinding by suppressing brittle-mode grinding and stabilizing a wafer. [Solution] A processing device 1 is provided with: an index table 2 on which a wafer W is moved from a coarse grinding stage S2 to a fine grinding stage S3; a column 4 provided so as to span over the coarse grinding stage S2 and the fine grinding stage S3; a coarse grinding means 5 provided on the column 4 above the coarse grinding stage S2, the coarse grinding means 5 performing coarse-grinding processing on the wafer W; and a fine grinding means 6 provided on the column 4 over the fine grinding stage S3, the fine grinding means 6 performing fine-grinding processing on the wafer W.
    Type: Application
    Filed: November 28, 2016
    Publication date: December 6, 2018
    Inventors: Makoto SHIMODA, Masaki KANAZAWA
  • Publication number: 20180229341
    Abstract: A grinding machine includes a rotatable spindle having a lower end to which a grindstone for grinding a wafer is attached; linear guides supporting the spindle slidably to a column; a spindle feeding mechanism feeding the spindle in a vertical direction; and constant-pressure feeding mechanism interposed between the spindle feeding mechanism and the column and suspending the spindle feeding mechanism.
    Type: Application
    Filed: September 29, 2016
    Publication date: August 16, 2018
    Inventors: Masaki KANAZAWA, Kenji IGARASHI
  • Publication number: 20180215006
    Abstract: A grinding apparatus that performs thickness measurement across an entire wafer surface without degradation of throughput of wafer grinding and grinds the wafer precisely to a target thickness. A grinding apparatus includes a rough grinding stage for roughly grinding a wafer and a fine grinding stage for finely grinding the wafer. A first thickness measuring means for measuring the thickness of the wafer while the wafer is being transferred is provided to a column so disposed as to span an index table. A control unit of the grinding apparatus corrects a target thickness after fine grinding and computes a target thickness after correction on the basis of an average thickness across the entire surface of the wafer before fine grinding obtained from measured values of the first thickness measuring means.
    Type: Application
    Filed: December 14, 2017
    Publication date: August 2, 2018
    Inventors: Masaki KANAZAWA, Makoto Shimoda
  • Publication number: 20150089050
    Abstract: A communication caused by applications that cannot be managed by an operator is operated on a mobile network, and is difficult to control. Therefore, burst traffic induced by the applications needs to be effectively detected, restricted, and controlled. A system has a terminal that monitors an update status of applications on a mobile network, periodically monitors the update status of the applications, extracts traffic of the applications from packets transmitted through the mobile network, summarized a traffic volume induced by the applications to detect the burst traffic generated when any application is updated, and controls the traffic of the applications when the burst is generated.
    Type: Application
    Filed: July 10, 2014
    Publication date: March 26, 2015
    Inventors: Seiya KUDO, Masaki KANAZAWA
  • Patent number: 8206198
    Abstract: A wafer grinding machine and a wafer grinding method are disclosed. A barrier (60) is arranged around a holding unit (29) to hold at least a wafer (40) with a film (11) attached on the front surface (41) thereof and with the back surface (42) thereof directed upward. The upper surface (61) of the barrier unit is ground to the position between the back surface of the wafer held by the holding unit and the boundary between the wafer and the film. Then, the wafer is ground while being held with the back surface thereof up by the holding unit. As a result, the film is prevented from coming off from the wafer at the time of grinding the back surface of the wafer. Further, when the wafer is ground, a fluid may be supplied into the gap between the barrier unit and the outer peripheral portion of the wafer held by the holding unit.
    Type: Grant
    Filed: December 17, 2008
    Date of Patent: June 26, 2012
    Assignee: Tokyo Seimitsu Co., Ltd.
    Inventor: Masaki Kanazawa
  • Patent number: 8154118
    Abstract: A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: April 10, 2012
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Masaki Kanazawa, Hideki Asuke
  • Patent number: 8052505
    Abstract: A wafer processing method for processing a wafer (20) having bumps (B) formed on a front surface (21) comprises the steps of: holding on a table (51), a bump region-conforming member (40) that has an outer shape conforming only to a bump region (25) where said bumps are formed in the wafer; forming a resin layer (29) by applying resin around the bump region-conforming member up to a thickness equal to or greater than that of the bump region-conforming member; grinding the bump region-conforming member along with the resin layer to a predetermined thickness; removing the bump region-conforming member from the table to form a concave part (45) in the resin layer; applying a film (11) on the front surface of the wafer; and disposing the wafer in the concave part of the resin layer and holding the wafer on the table so that a back surface (22) of said wafer faces upward. After that, the back surface of the wafer can also be ground.
    Type: Grant
    Filed: January 27, 2009
    Date of Patent: November 8, 2011
    Assignee: Tokyo Seimitsu Co., Ltd.
    Inventors: Masaki Kanazawa, Hajime Akahori
  • Patent number: 8052824
    Abstract: There is provided a film peeling device (100) for peeling a film (3) stuck onto a first portion (121) containing a peripheral portion of a wafer (20) and also stuck onto a second portion (122) located inward with respect to the first portion, comprising: a moving means (61, 62) for relatively moving the first portion and/or second portion so that the film of the first portion of the wafer can be located at a position higher than the film of the second portion; a tape drawing means (142) for drawing out a peeling tape (103) onto the film stuck onto the first and the second portion; and a peeling means (146) for peeling the film from the first and the second portion of the wafer when the peeling tape drawn out from the tape drawing means is pressed against only the first portion film and moved along the first portion. Due to the foregoing, it is possible to prevent the wafer from being damaged at the time of peeling the front surface protection film.
    Type: Grant
    Filed: July 5, 2006
    Date of Patent: November 8, 2011
    Assignee: Tokyo Seimitsu Co., Ltd.
    Inventor: Masaki Kanazawa
  • Publication number: 20110133561
    Abstract: A semiconductor device (10) includes: an base substance (15) having a ferromagnetic material; a first semiconductor chip (11) and a second semiconductor chip (12) installed on the base substance (15); a first coil (131) installed on the base substance (15) and electrically connected to the first semiconductor chip (11); a second coil (132) installed on the first coil (131), electromagnetically connected to the first coil (131) and electrically connected to the second semiconductor chip (12); a transformer assembly (18) made of a ferromagnetic material and installed on the base substance (15), and a sealing body. The transformer assembly (18) includes a first core section (181), a first side shield section (182), and a first upper shield section (183).
    Type: Application
    Filed: June 19, 2009
    Publication date: June 9, 2011
    Applicant: Sanken Electric Co., Ltd.
    Inventors: Masaki Kanazawa, Hideki Asuke
  • Patent number: 7915875
    Abstract: A current-mode controlled DC-DC converter includes a comparator comparing a first or second current detection signal with a first or second reference current that is based on an error voltage of a voltage detection signal, a pulse generator generating a first pulse signal whose ON time is longer than an interval between when the second current detection signal reaches a minimum value and when the second current detection signal reaches the second reference current, a pulse generator generating a second pulse signal whose ON time is longer than an interval between when the first current detection signal reaches a minimum value and when the first current detection signal reaches the first reference current, the second pulse signal being behind the first pulse signal by a half period, and a PWM circuit generating a first or second PWM signal according to the pulse signal and an output signal from the comparator, thereby turning on/off a switch.
    Type: Grant
    Filed: October 14, 2008
    Date of Patent: March 29, 2011
    Assignees: Sanken Electric Co., Ltd., Shimane University
    Inventors: Hideki Asuke, Hideharu Takano, Masaki Kanazawa, Mamoru Tsuruya, Masayoshi Yamamoto, Hiroyuki Horii, Shigeyuki Funabiki
  • Patent number: 7880222
    Abstract: A semiconductor device 10 includes a first transistor 11 placed on a substrate 16, a second transistor 12 placed on the first transistor 11 via a heat radiation layer 17, a third transistor 13 placed on the substrate 16, and a fourth transistor 14 placed on the third transistor 11 via a heat radiation layer 17. The first transistor 11 has a first region corresponding to a region where the second transistor is placed, and a second region which is formed so as to surround the first region and in which the rate of area occupied by the emitter region in the base region is higher than in the first region. Likewise the first transistor 11, the third transistor 13 has a region in which the rate of area occupied by the emitter region in the base region is varied.
    Type: Grant
    Filed: February 17, 2006
    Date of Patent: February 1, 2011
    Assignee: Sanken Electric Co., Ltd.
    Inventors: Katsuyuki Torii, Masaki Kanazawa
  • Publication number: 20100054185
    Abstract: A communication quality management equipment connected via a control line to a plurality of wireless base stations within a wireless access network, acquires quality information of a wireless line at a present position of a mobile terminal, resource information as to a wireless line of each of the wireless base stations, and use information as to a network line of each of the wireless base stations from the respective wireless base stations in a periodic manner, or in response to an instruction issued from the communication quality management equipment, and then judges a communication quality at each of the present positions of the mobile terminal; forms communication quality map information in which the judged communication qualities have been defined in correspondence with the positional information, and transmits the formed communication quality map information to the mobile terminal in accordance with a request from the mobile terminal.
    Type: Application
    Filed: June 18, 2009
    Publication date: March 4, 2010
    Inventors: Masaaki Kaneko, Yasuhito Maejima, Masami Takahashi, Hiroya Kai, Masaki Kanazawa, Yoshikazu Taoda
  • Patent number: 7638900
    Abstract: A bi-directional DC-DC converter includes a first series circuit connected to ends of a first DC power source and including a first winding of a first reactor and a first switch; a second series circuit connected to ends of the first switch and including a second winding of the first reactor, a second reactor, a second switch, a third switch, and a second DC power source; a third series circuit connected to the ends of the first switch and including a fourth switch and the second DC power source; and a control circuit configured to turn on/off the switches and thereby carry out step-up and step-down operations between the first and second DC power sources.
    Type: Grant
    Filed: October 14, 2008
    Date of Patent: December 29, 2009
    Assignees: Sanken Electric Co., Ltd., Shimane University
    Inventors: Hideki Asuke, Hideharu Takano, Masaki Kanazawa, Mamoru Tsuruya, Masayoshi Yamamoto, Hirotaka Hara, Shigeyuki Funabiki
  • Patent number: 7608918
    Abstract: A semiconductor device is provided which comprises a heat-radiative support plate 5; and first and second semiconductor elements 1 and 2 mounted and layered on support plate 5 for alternate switching of first and second semiconductor elements 1 and 2. The arrangement of piling and securing first and second semiconductor elements 1 and 2 on support plate 5 improves integration degree of semiconductor elements 1 and 2, and reduces the occupation area on support plate 5. Alternate switching of first and second semiconductor elements 1 and 2 controls heat produced from first and second semiconductor elements 1 and 2 because one of first and second semiconductor elements 1 and 2 is turned on, while the other is turned off.
    Type: Grant
    Filed: May 27, 2004
    Date of Patent: October 27, 2009
    Assignee: Sanken Electric Co., Ltd.
    Inventor: Masaki Kanazawa
  • Publication number: 20090262555
    Abstract: A current-mode controlled DC-DC converter includes a comparator comparing a first or second current detection signal with a first or second reference current that is based on an error voltage of a voltage detection signal, a pulse generator generating a first pulse signal whose ON time is longer than an interval between when the second current detection signal reaches a minimum value and when the second current detection signal reaches the second reference current, a pulse generator generating a second pulse signal whose ON time is longer than an interval between when the first current detection signal reaches a minimum value and when the first current detection signal reaches the first reference current, the second pulse signal being behind the first pulse signal by a half period, and a PWM circuit generating a first or second PWM signal according to the pulse signal and an output signal from the comparator, thereby turning on/off a switch.
    Type: Application
    Filed: October 14, 2008
    Publication date: October 22, 2009
    Applicants: Sanken Electric Co., Ltd., Shimane University
    Inventors: Hideki Asuke, Hideharu Takano, Masaki Kanazawa, Mamoru Tsuruya, Masayoshi Yamamoto, Hiroyuki Horii, Shigeyuki Funabiki
  • Publication number: 20090262557
    Abstract: A bi-directional DC-DC converter includes a first series circuit connected to ends of a first DC power source and including a first winding of a first reactor and a first switch; a second series circuit connected to ends of the first switch and including a second winding of the first reactor, a second reactor, a second switch, a third switch, and a second DC power source; a third series circuit connected to the ends of the first switch and including a fourth switch and the second DC power source; and a control circuit configured to turn on/off the switches and thereby carry out step-up and step-down operations between the first and second DC power sources.
    Type: Application
    Filed: October 14, 2008
    Publication date: October 22, 2009
    Applicants: Sanken Electric Co., Ltd., Shimane University
    Inventors: Hideki Asuke, Hideharu Takano, Masaki Kanazawa, Mamoru Tsuruya, Masayoshi Yamamoto, Hirotaka Hara, Shigeyuki Funabiki