Abstract: A tool magazine device including: a tool transport unit in which a plurality of tool pots are disposed at predetermined intervals on the outer periphery of the tool transport unit and which is configured to circulate and transport each tool pot along a trajectory that circulates in up-and-down direction; and a chip guide disposed along a tip trajectory of a tool held in the tool pots and including a guide surface that receives and guides chips separated from the tool. According to the tool magazine device, chips and the like fallen from the tool held in the tool pots can be easily collected.

Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Abstract: A magazine comprises: a conveyer unit that has a plurality of tool pots that each hold a tool detachably and conveys the plurality of tool pots; and a magazine cover that accommodates the conveyer unit. The conveyer unit allows a tool to be manually attached to and detached from a tool pot conveyed to a predetermined position. The magazine further comprises a display unit that is provided inside the magazine cover and displays a first design. The first design represents an arc or circumference for a diameter corresponding to a maximum diameter of a tool which can be held by the tool pot.

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor.

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: Provided is a solid-state image sensor of a vertical spectral diffraction type in which a plurality of photoelectric conversion units are stacked in a region of each pixel, the solid-state image sensor includes a first photoelectric conversion module that includes a first photoelectric conversion unit that to performs photoelectric conversion on light in a first wavelength range of incident light, a first upper electrode and a first lower electrode with the first photoelectric conversion unit between the first upper electrode and the first lower electrode, and a first spectral correction unit between the first upper electrode and the first lower electrode stacked on the first photoelectric conversion unit and a second photoelectric conversion unit that performs photoelectric conversion on light in a second wavelength range of light that has passed through the first photoelectric conversion module, the second wavelength range is different from the first wavelength range.

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.

Abstract: The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor.

Abstract: Provided is a sensor apparatus including: a normal operation unit including a first sensor and a storage device; an external environment detection unit including a second sensor; a power supply switch unit configured to control supply of electric power to the normal operation unit; and a power supply configured to supply the electric power to the normal operation unit via the power supply switch unit. In the sensor apparatus, in an operational mode, the normal operation unit records data measured by the first sensor into the storage device, and, in a non-operational mode, when a measured value obtained by the second sensor satisfies a predetermined condition, the external environment detection unit controls the power supply switch unit so that the power supply switch unit supplies the electric power to the normal operation unit, and the normal operation unit records the data measured by the first sensor into the storage device.

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: In an image pickup element or a photoelectric conversion element, at least an anode 21, a carrier blocking layer 22, an organic photoelectric conversion layer 23, and a cathode 25 are laminated in order, and the carrier blocking layer 22 includes a material having the following structural formula (1), and part of an organic semiconductor material constituting the organic photoelectric conversion layer 23.

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10?9 to 1.

Abstract: There is provided an imaging device including an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode. Further, there is provided an electronic apparatus including an imaging device that includes an upper electrode; a lower electrode; a photoelectric conversion layer disposed between the upper electrode and the lower electrode; and a first organic semiconductor material including an indolocarbazole derivative and disposed between the upper electrode and the lower electrode.