Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Abstract: The present invention provides a thermoplastic resin composition, comprising: a thermoplastic resin consisting of 30 to 90 mass % of a polycarbonate resin and 10 to 70 mass % of a styrene-based resin; an ultraviolet absorber; and an N—R type hindered amine light stabilizer, wherein the content of the ultraviolet absorber is 0.01 to 3 parts by mass, and the content of the N—R type hindered amine light stabilizer is 0.01 to 3 parts by mass with respect to 100 parts by mass of the thermoplastic resin.

Abstract: A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode 21 and the second electrode 22. The photoelectric conversion material layer 30 is formed of the following structural formula (1).

Abstract: Provided is a sensor apparatus including: a normal operation unit including a first sensor and a storage device; an external environment detection unit including a second sensor; a power supply switch unit configured to control supply of electric power to the normal operation unit; and a power supply configured to supply the electric power to the normal operation unit via the power supply switch unit. In the sensor apparatus, in an operational mode, the normal operation unit records data measured by the first sensor into the storage device, and, in a non-operational mode, when a measured value obtained by the second sensor satisfies a predetermined condition, the external environment detection unit controls the power supply switch unit so that the power supply switch unit supplies the electric power to the normal operation unit, and the normal operation unit records the data measured by the first sensor into the storage device.

Abstract: A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1).

Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).

Abstract: Provided is a light receiving/emitting element and a light receiving/emitting apparatus that can be easily manufactured and allow high-sensitivity detection. The light receiving/emitting element is configured to include a first organic photoelectric conversion unit and a second organic photoelectric conversion unit that is disposed on the first organic photoelectric conversion unit and is different in spectral sensitivity from the first organic photoelectric conversion unit, wherein one of the first organic photoelectric conversion unit and the second organic photoelectric conversion unit acts as a light receiving unit and the other acts as a light emitting unit. The light receiving/emitting apparatus is configured to have the light receiving/emitting element mounted thereon.

Abstract: In an image pickup element or a photoelectric conversion element, at least an anode 21, a carrier blocking layer 22, an organic photoelectric conversion layer 23, and a cathode 25 are laminated in order, and the carrier blocking layer 22 includes a material having the following structural formula (1), and part of an organic semiconductor material constituting the organic photoelectric conversion layer 23.

Abstract: Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10?9 to 1.

Abstract: Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes: (a-1) a first electrode and a second electrode which are disposed apart from each other; and (a-2) a photoelectric conversion area which is disposed between the first electrode and the second electrode, wherein the photoelectric conversion area includes multiple layers and at least one of the multiple layers is formed of a dioxaanthanthrene-based compound represented by the structural formula (1).

Abstract: A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.

Abstract: A method of detecting a change in current is provided which includes irradiating light on at least one photoelectric conversion material layer, and detecting an increased change in current generated in the photoelectric conversion material layer. A photoelectric conversion apparatus is also provided and includes a photoelectric conversion element including a photoelectric conversion material layer, and a current detection circuit electrically connected to the photoelectric conversion element. In the photoelectric conversion apparatus, the current detection circuit detects an increased change in current generated in the photoelectric conversion material layer.

Abstract: A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode 21 and the second electrode 22. The photoelectric conversion material layer 30 is formed of the following structural formula (1).

Abstract: A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1).

Abstract: A method of detecting a change in current is provided which includes irradiating light on at least one photoelectric conversion material layer, and detecting an increased change in current generated in the photoelectric conversion material layer. A photoelectric conversion apparatus is also provided and includes a photoelectric conversion element including a photoelectric conversion material layer, and a current detection circuit electrically connected to the photoelectric conversion element. In the photoelectric conversion apparatus, the current detection circuit detects an increased change in current generated in the photoelectric conversion material layer.

Abstract: A photoelectric conversion device includes an organic photoelectric conversion film; a first electrode and a second electrode provided with the organic photoelectric conversion film in between; and a charge block layer provided between the second electrode and the organic photoelectric conversion film, in which the charge block layer includes a work function adjustment layer including a metal element on the second electrode side of the organic photoelectric conversion film, the metal element being adopted to adjust a work function, and a first diffusion suppression layer provided between the work function adjustment layer and the second electrode and suppressing diffusion of the metal element to the second electrode side.

Abstract: A method of detecting a change in current is provided which includes irradiating light on at least one photoelectric conversion material layer, and detecting an increased change in current generated in the photoelectric conversion material layer. A photoelectric conversion apparatus is also provided and includes a photoelectric conversion element including a photoelectric conversion material layer, and a current detection circuit electrically connected to the photoelectric conversion element. In the photoelectric conversion apparatus, the current detection circuit detects an increased change in current generated in the photoelectric conversion material layer.

Abstract: A photoelectric conversion material is provided and includes an organic material having an absorbing coefficient of about 1.5×105 (cm?1) or more and that is represented by the following formula (1). In the formula (1), each of R1 to R20, and each of X1 to X8 is one of a hydrogen atom and a substituent.