Abstract: A magnetic field detection device, containing a) a first soft magnetic body containing a1) a first plate including a first surface having a first outer edge; and a2) a first protrusion disposed directly or indirectly on the first surface of the first plate at a first arrangement position set back from the first outer edge, the first protrusion including a first tip on an opposite side to the first surface; and b) a magnetic detector provided in a vicinity of the first tip, wherein the magnetic detector has a magnetic sensing direction along the first surface, and the first protrusion is capable of bending a direction of a first magnetic flux, which comes into the first plate, along the first surface.

Abstract: Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.

Abstract: A composite capacitor that includes a first capacitor and a second capacitor. Each of plural first columnar conductors and each of plural second columnar conductors have a nano-size outer diameter. The composite capacitor includes a connecting conductor layer and a reinforcement conductor. The reinforcement conductor is located between a first counter electrode layer and a second counter electrode layer of the first capacitor and the second capacitor, respectively, and is connected to each of the first counter electrode layer, the second counter electrode layer, and the connecting conductor layer. The material forming the reinforcement conductor is the same as each of the first counter electrode layer and the second counter electrode layer and is different from the material forming the connecting conductor layer.

Abstract: A composite capacitor that includes a plurality of capacitors and an insulating section. The plurality of capacitors are stacked on each other. The insulating section covers peripheral surfaces of the plurality of capacitors about a central axis of the plurality of capacitors, the stacking direction of the plurality of capacitors being a direction of the central axis. Each of the plurality of capacitors includes a support electrode layer, plural columnar conductors, a dielectric layer, and a counter electrode layer. Each of the plural columnar conductors has a nano-size outer diameter. The plurality of capacitors include a first capacitor and a second capacitor connected in parallel with the first capacitor.

Abstract: A rotational angle detection apparatus is provided with a magnet disposed so as to be rotatable integrally with an axis of rotation, having a substantially circular shape when viewed along the axis of rotation, and including a magnetization vector component in a direction orthogonal to the axis of rotation; a magnetic sensor that outputs a sensor signal on the basis of change in a magnetic field accompanying rotation of the magnet; and a rotational angle detector that detects a rotational angle of the rotating body on the basis of the sensor signal output by the magnetic sensor; wherein the magnet has a curved inclined surface with a concave shape along the axis of rotation from a prescribed position on the outer side in a radial direction toward the axis of rotation, and when a circular virtual plane orthogonal to the axis of rotation and centered at the axis of rotation is established at a position opposed to the curved inclined surface, the magnetic sensor is disposed at a position at which the amplitudes

Abstract: A capacitor is provided having a plurality of first conductive columnar portions that each have a nanosized outer diameter. Moreover, each of a plurality of second conductive columnar portions also have a nanosized outer diameter. A conductive portion is disposed on a first dielectric layer and faces at least a part of each of the plurality of first conductive columnar portions with the first dielectric layer interposed therebetween. The conductive portion is also disposed on a second dielectric layer and faces at least a part of each of the plurality of second conductive columnar portions with the second dielectric layer interposed therebetween. A tip of each of the second conductive columnar portions is located closer to a first support portion than a tip of each of the first conductive columnar portions.

Abstract: Provided is a magnetic field detection device that includes a first soft magnetic body and a magnetic detector. The first soft magnetic body includes a first plate and a first protrusion. The first plate includes a first surface including a first outer edge. The first protrusion is provided at a first arrangement position in the first surface and includes a first tip on opposite side to the first surface. The first arrangement position is set back from the first outer edge. The magnetic detector is provided in the vicinity of the first tip.

Abstract: Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer, a gate trench defined in the semiconductor layer, a first insulating film arranged on the inner surface of the gate trench, a gate electrode arranged in the gate trench via the first insulating film, and a source layer, a body layer, and a drain layer arranged laterally to the gate trench, in which the first insulating film includes, at least at the bottom of the gate trench, a first portion and a second portion with a film elaborateness lower than that of the first portion from the inner surface of the gate trench in the film thickness direction.

Abstract: A semiconductor device includes an n-type semiconductor substrate which includes an n-type impurity having a diffusion coefficient less than a diffusion coefficient of phosphorus, an n-type epitaxial layer which includes a high concentration region, an intermediate concentration region and a low concentration region formed in this order from the semiconductor substrate side and has a concentration gradient in which an n-type impurity concentration is decreased in a downward step-wise manner from the semiconductor substrate toward a crystal growth direction by the high concentration region, the intermediate concentration region and the low concentration region, and a trench structure which includes a trench formed in the low concentration region, an insulating layer formed on an inner wall of the trench and an embedded electrode which is embedded in the trench across the insulating layer.

Abstract: A semiconductor device includes a semiconductor layer that has a first surface and a second surface, a trench that is formed at the first surface of the semiconductor layer and that extends in a first direction, an element portion that has a first-conductivity-type first region, a second-conductivity-type second region, and a third-conductivity-type third region that are formed in order along a depth direction of the trench from the first surface of the semiconductor layer, a gate insulating film formed at an inner surface of the trench, and a gate electrode that is embedded in the trench and that faces the first region, the second region, and the third region through the gate insulating film.

Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the

Abstract: There is provided a semiconductor device, including: a semiconductor chip including a main surface; a gate trench formed on the main surface; a first insulating film configured to cover an upper wall surface of the gate trench; a second insulating film configured to cover a lower wall surface of the gate trench; a field trench formed on the main surface so as to be spaced apart from the gate trench, and including a facing wall at a side of the gate trench and a non-facing wall at an opposite side of the facing wall; a third insulating film configured to cover an upper wall surface of the field trench at a side of the facing wall; and a fourth insulating film configured to cover a lower wall surface of the field trench at the side of the facing wall and the non-facing wall.

Abstract: A semiconductor device includes a first conductivity type semiconductor layer having a first surface and a second surface opposite to the first surface and having an element portion formed in the first surface and an outer peripheral portion surrounding the element portion, a semiconductor element structure formed in the element portion, multiple guard ring trenches formed in the outer peripheral portion and each formed in the first surface of the semiconductor layer, and a second conductivity type outer peripheral portion impurity region formed in the outer peripheral portion, in which the multiple guard ring trenches include a first unit consisting of multiple guard ring trenches and a second unit consisting of multiple guard ring trenches arranged on the outside of the semiconductor layer relative to the multiple guard ring trenches belonging to the first unit, and in which the outer peripheral portion impurity region includes a first portion arranged below the multiple guard ring trenches belonging to the

Abstract: An optical device includes a protective cover and a driver. An outer surface of the protective cover includes a first region having higher hydrophobicity than a second region. The first region is separated from the second region by a first boundary line extending from a starting point deviating from a center point of the protective cover in the direction toward an outer edge portion of the protective cover and a second boundary line extending from the starting point in the direction toward the outer edge portion of the protective cover, and which is located on a side where the center point is not included. Among angles defined by the first and second boundary lines, an angle on the side where the center point is not included is equal to or less than about 180°.

Abstract: An optical device includes a protective cover disposed in a field of view direction of an optical sensor, a casing that holds the protective cover, a temperature adjuster that adjusts the temperature of the protective cover, and a vibrating body that drives the protective cover to remove foreign matter adhering to a surface of the protective cover. The temperature adjuster adjusts the temperature of the protective cover so that the temperature increases from the periphery to the center of the protective cover.

Abstract: An optical unit includes an optical sensor, a protective cover disposed in a direction of view from the optical sensor, an actuator to drive the protective cover, and a casing including a space between the casing and the protective cover and to which the optical sensor and the protective cover are attached. A first region on the casing adjacent to an outer edge of the protective cover with the space interposed between the casing and the outer edge of the protective cover is a hydrophobic region where a contact angle of a droplet is equal to or larger than a predetermined angle.

Abstract: A transmission device that includes a first shaft, a second shaft to which torque is transmitted from the first shaft via a torque transmitting mechanism, a tubular drive gear attached to the second shaft, and a driven gear that meshes with the drive gear, wherein the drive gear includes a plurality of outer teeth that are each meshed with a corresponding one of gear teeth of the driven gear and a fitting portion that is formed on an inner peripheral surface of the drive gear and that is fitted to the second shaft so that the drive gear rotates integrally with the second shaft.

Abstract: A magnetic field detection device includes a first soft magnetic body, a second soft magnetic body, and a magnetism detection element. The first soft magnetic body extends to have a first length in a first direction, and has a first width, smaller than the first length, in a second direction. The second direction is substantially orthogonal to the first direction. The second soft magnetic body is disposed to be spaced apart from and face the first soft magnetic body in the first direction, extends to have a second length in the first direction, and has a second width, smaller than the second length, in the second direction. The magnetism detection element is disposed, in the first direction, between the first and second soft magnetic bodies, and extends to have a third length in the first direction and a third width, larger than the third length, in the second direction.

Abstract: A transmission device that includes a first shaft, a second shaft to which torque is transmitted from the first shaft via a torque transmitting mechanism, a tubular drive gear attached to the second shaft, and a driven gear that meshes with the drive gear, wherein the drive gear includes a plurality of outer teeth that are each meshed with a corresponding one of gear teeth of the driven gear and a fitting portion that is formed on an inner peripheral surface of the drive gear and that is fitted to the second shaft so that the drive gear rotates integrally with the second shaft.