Abstract: Provided is a magnetic field detection device that includes a first soft magnetic body and a magnetic detector. The first soft magnetic body includes a first plate and a first protrusion. The first plate includes a first surface including a first outer edge. The first protrusion is provided at a first arrangement position in the first surface and includes a first tip on opposite side to the first surface. The first arrangement position is set back from the first outer edge. The magnetic detector is provided in the vicinity of the first tip.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer, a gate trench defined in the semiconductor layer, a first insulating film arranged on the inner surface of the gate trench, a gate electrode arranged in the gate trench via the first insulating film, and a source layer, a body layer, and a drain layer arranged laterally to the gate trench, in which the first insulating film includes, at least at the bottom of the gate trench, a first portion and a second portion with a film elaborateness lower than that of the first portion from the inner surface of the gate trench in the film thickness direction.

Abstract: Provided is a magnetic field detection device that includes a first and second soft magnetic bodies, and a magnetic detector. The first and second soft magnetic bodies extend along a first plane and are disposed in confronted relation in a third direction. The first plane includes both a first direction and a second direction orthogonal to the first direction. The third direction is orthogonal to both the first and second directions. The magnetic detector is provided between the first and second soft magnetic bodies in the third direction.

Abstract: A rotation angle sensing device is provided with a magnet that is placed to be integrally rotatable with a rotary shaft of a rotating body in association with a rotating body, where the shape of the magnet as viewed along the rotary shaft is substantially circular; a magnetic sensor part that outputs a sensor signal based upon a change in a direction of a magnetic field in association with the rotation of the magnet; and a rotation angle detecting part that detects a rotation angle of the rotating body based upon the sensor signal output by the magnetic sensor part. The magnet has a component of a magnetization vector in a direction that is orthogonal to the rotary shaft.

Abstract: A rotational angle detection apparatus is provoded with a magnet disposed so as to be rotatable integrally with an axis of rotation, having a substantially circular shape when viewed along the axis of rotation, and including a magnetization vector component in a direction orthogonal to the axis of rotation; a magnetic sensor that outputs a sensor signal on the basis of change in a magnetic field accompanying rotation of the magnet; and a rotational angle detector that detects a rotational angle of the rotating body on the basis of the sensor signal output by the magnetic sensor; wherein the magnet has a curved inclined surface with a concave shape along the axis of rotation from a prescribed position on the outer side in a radial direction toward the axis of rotation, and when a circular virtual plane orthogonal to the axis of rotation and centered at the axis of rotation is established at a position opposed to the curved inclined surface, the magnetic sensor is disposed at a position at which the amplitudes

Abstract: A rotation angle sensing device is provided with a magnet that has a component with a magnetization vector in a direction orthogonal to a rotary shaft, a magnetic sensor part that outputs a sensor signal, and a rotation angle sensing part that detects a rotation angle of a rotating body based upon the sensor signal; the magnet has first and second surfaces substantially orthogonal to the rotary shaft, and a concave side surface that is continuous throughout all circumferences in the circumferential direction; the magnetic sensor part is placed within the space surrounded by the concave side surface, and at a position where an amplitude of a magnetic field intensity Hr and an amplitude of a magnetic field intensity H?on the virtual plane are substantially identical to each other, and outputs either the magnetic field intensity Hr or the magnetic field intensity H? as the sensor signal.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.

Abstract: A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.

Abstract: A fixing device includes a belt member that performs a circular motion by rotating in a predetermined belt rotation direction; a pressure-applying member that is pressed against an outer peripheral surface of the belt member and applies a pressure to a recording medium on which an image is formed; and a pressing member that extends in a belt width direction, which is a direction that crosses the belt rotation direction, inside the belt member and that is arranged so as to be deformed such that a central portion thereof in the belt width direction is convex toward an upstream side in the belt rotation direction, the pressing member pressing the pressure-applying member with the belt member interposed therebetween.

Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.

Abstract: A fixing device includes a belt member that performs a circular motion by rotating in a predetermined belt rotation direction; a pressure-applying member that is pressed against an outer peripheral surface of the belt member and applies a pressure to a recording medium on which an image is formed; and a pressing member that extends in a belt width direction, which is a direction that crosses the belt rotation direction, inside the belt member and that is arranged so as to be deformed such that a central portion thereof in the belt width direction is convex toward an upstream side in the belt rotation direction, the pressing member pressing the pressure-applying member with the belt member interposed therebetween.

Abstract: An object of the present invention is to provide a novel method for producing hydrogen peroxide by direct synthesis that is capable of taking the place of the conventional anthraquinone process, and to provide a catalyst used in the production method. The present invention is a metal complex represented by the following general formula (1), (2), (3) or (4).

Abstract: A fixing device includes a pressure applying unit that is provided facing a heating unit. The pressure applying unit includes an endless belt-shaped member that rotates by being driven by rotation of the heating unit, and a retainer that retains the endless belt-shaped member in a movable manner. The retainer has an upstream adjuster that is located at an upstream side of the endless belt-shaped member in a rotational direction thereof and that has a curved shape with a center, in a longitudinal direction of the retainer, which is a most bulging area from which the upstream adjuster decreases in height toward opposite ends of the upstream adjuster.

Abstract: A fixing device includes a fixing roller, a rotatable endless belt forming a nip between the fixing roller and the belt, a heating member whose heat source heats the nip, a support member disposed in the belt to face the fixing roller and having a surface having a substantially non-arc shape in a rotation direction of the belt and being in contact with an inner surface of the belt to sandwich the belt between the support member and the fixing roller, and a pressing member including guiding members that support and guide end edges of the belt. The guiding members each have a groove having inner and outer walls that guide an edge of the belt in a direction in which a rotation axis of the belt extends and a substantially arc-shaped bottom surface that extends around the axis and along which an end surface of the belt slides.

Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.

Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.

Abstract: An object of the present invention is to provide a novel method for producing hydrogen peroxide by direct synthesis that is capable of taking the place of the conventional anthraquinone process, and to provide a catalyst used in the production method. The present invention is a metal complex represented by the following general formula (1), (2), (3) or (4).

Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.

Abstract: A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked on the drain region, and a source region stacked on the channel region. The active region is formed of a silicon semiconductor layer. The gate conductor is embedded within a trench, which is formed from the source region to the drain region penetrating through the channel region. The source electrode is formed to come in contact with the source region and includes an adhesion layer. The source electrode is formed of a metal layer having a film thickness of 150 ? or smaller. The interface between the source electrode and the source region is silicidized.

Abstract: An arc melting furnace apparatus is provided which reduces an operation burden on a worker and shortens working hours. An arc melting furnace apparatus 1 includes a housing 2 having formed therein a melting chamber 2a, a hearth 4 provided within the melting chamber 2a and having a recessed portion 4a, and a heating mechanism 10 for heating and melting a metal material supplied into the recessed portion 4 to generate an alloy ingot. The apparatus comprises a turning member 23 rotatably supported on a supporting member 21 standing within the melting chamber 2a, a perimeter edge of the turning member 23 rotating and moving along the inner surface of the recessed portion 4a to lift the alloy ingot generated in the recessed portion 4a above the hearth 4 and turn it over, and a resilient turn-over assisting member 24 provided above an upper end of the recessed portion 4a.