Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: Influence of chipping in case of dicing a plurality of stacked substrates is reduced. Provided is a semiconductor device where a substrate, in which a groove surrounding a pattern configured with a predetermined circuit or part is formed, is stacked. The present technology can be applied to, for example, a stacked lens structure where through-holes are formed in each substrate and lenses are disposed in inner sides of the through-holes, a camera module where a stacked lens structure and a light-receiving device are incorporated, a solid-state imaging device where a pixel substrate and a control substrate are stacked, and the like.

Abstract: A connector 10 disclosed by this specification is a connector 10 to be mounted on a casing 1 of a device by being inserted into a mounting hole 2 provided in the casing 1 and includes a terminal 40 connected to a wire W, a housing 20 having the terminal 40 mounted therein, and an intermediate terminal 30 made of metal, mounted in the housing 20 and disposed between the terminal 40 and a mating terminal 4 in the casing 1. A fastened component (nut 5) disposed in the casing 1 and to be fastened to a fastening component (bolt B), the mating terminal 4, the intermediate terminal 30 and the terminal 40 are arranged side by side in a fastening direction, and the terminal 40 and the mating terminal 4 are connected via the intermediate terminal 30 by being collectively fastened by the fastening component and the fastened component.

Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Abstract: This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Abstract: A connector 10 disclosed by this specification is a connector 10 to be mounted on a casing 1 of a device by being inserted into a mounting hole 2 provided in the casing 1 and includes a terminal 40 connected to a wire W, a housing 20 having the terminal 40 mounted therein, and an intermediate terminal 30 made of metal, mounted in the housing 20 and disposed between the terminal 40 and a mating terminal 4 in the casing 1. A fastened component (nut 5) disposed in the casing 1 and to be fastened to a fastening component (bolt B), the mating terminal 4, the intermediate terminal 30 and the terminal 40 are arranged side by side in a fastening direction, and the terminal 40 and the mating terminal 4 are connected via the intermediate terminal 30 by being collectively fastened by the fastening component and the fastened component.

Abstract: A waterproof connector is a connectable to a device-side connector (80) and has a housing (30) with a fitting (34) that can fit into an outer tube (82) of the device-side connector (80). A connector seal ring (36) is fit on an outer peripheral surface of the fitting (34) and is held resiliently in close contact with the outer tube (82) and the fitting (34). Individual terminal accommodating portions (37) are provided in the housing (30) and can fit into device-side cavities (84) provided in the device-side connector (80). Individual seal rings (38) are fitted on outer peripheral surfaces of the individual terminal accommodating portions (37) and are held resiliently in close contact with inner peripheral surfaces of the device-side cavities (84) and the individual terminal accommodating portions (37). The connector seal rings (36) and the individual seal rings are displaced in a front-rear direction.

Abstract: A waterproof connector is a connectable to a device-side connector (80) and has a housing (30) with a fitting (34) that can fit into an outer tube (82) of the device-side connector (80). A connector seal ring (36) is fit on an outer peripheral surface of the fitting (34) and is held resiliently in close contact with the outer tube (82) and the fitting (34). Individual terminal accommodating portions (37) are provided in the housing (30) and can fit into device-side cavities (84) provided in the device-side connector (80). Individual seal rings (38) are fitted on outer peripheral surfaces of the individual terminal accommodating portions (37) and are held resiliently in close contact with inner peripheral surfaces of the device-side cavities (84) and the individual terminal accommodating portions (37). The connector seal rings (36) and the individual seal rings are displaced in a front-rear direction.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: There is provided a semiconductor device and an electronic apparatus that comprises a semiconductor device, the semiconductor device including a first chip, a second chip that is bonded onto a first surface side of the first chip, a through electrode that is formed to penetrate from a second surface side of the first chip to a second wiring layer on the second semiconductor base substrate, and an insulation layer that is disposed between the through electrode and a semiconductor base substrate in the first chip.

Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract: The present invention provides a method for detecting idiopathic interstitial pneumonia, which comprises measuring the expression level of a periostin gene or the amount of a periostin protein in a biological sample. Thereby, a method for detecting idiopathic interstitial pneumonia using a marker is provided.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: There is provided a method for manufacturing a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.

Abstract: A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.