Abstract: A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an insulated gate electrode structure traversing an intermediate portion of the fin and having side walls in conformity with the side walls of the fin; source/drain regions formed in the fin on both sides of the gate electrode; side wall insulating films including a first portion formed on the side walls of the conductive gate electrode and a second portion formed on the side walls of the fin and having an opening in the source/drain regions extending from an upper edge to a lower edge of each of the side walls; a silicide layer formed on each surface of the source/drain regions exposed in the opening of the second side wall insulating film; and source/drain electrodes contacting the silicide layers.

Abstract: A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an insulated gate electrode structure traversing an intermediate portion of the fin and having side walls in conformity with the side walls of the fin; source/drain regions formed in the fin on both sides of the gate electrode; side wall insulating films including a first portion formed on the side walls of the conductive gate electrode and a second portion formed on the side walls of the fin and having an opening in the source/drain regions extending from an upper edge to a lower edge of each of the side walls; a silicide layer formed on each surface of the source/drain regions exposed in the opening of the second side wall insulating film; and source/drain electrodes contacting the silicide layers.

Abstract: A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an insulated gate electrode structure traversing an intermediate portion of the fin and having side walls in conformity with the side walls of the fin; source/drain regions formed in the fin on both sides of the gate electrode; side wall insulating films including a first portion formed on the side walls of the conductive gate electrode and a second portion formed on the side walls of the fin and having an opening in the source/drain regions extending from an upper edge to a lower edge of each of the side walls; a silicide layer formed on each surface of the source/drain regions exposed in the opening of the second side wall insulating film; and source/drain electrodes contacting the silicide layers.

Abstract: A semiconductor device is disclosed that includes a semiconductor substrate, a device region disposed at a predetermined location of the semiconductor substrate, and a shallow trench isolation region that isolates the device region. The shallow trench isolation region includes a trench, a nitride film liner disposed at an upper portion of a side wall of the trench, and a thermal oxide film disposed at a lower portion of the side wall of the trench. The shallow trench isolation is arranged such that the width of a second portion of the shallow trench isolation region at which the thermal oxide film is disposed may be wider than the width of a first portion of the shallow trench isolation region at which the lower end of the nitride film liner is disposed.

Abstract: A semiconductor device comprises a fin-type semiconductor region (fin) on a support substrate, having a pair of generally vertical side walls and an upper surface coupling the side walls; an insulated gate electrode structure traversing an intermediate portion of the fin and having side walls in conformity with the side walls of the fin; source/drain regions formed in the fin on both sides of the gate electrode; side wall insulating films including a first portion formed on the side walls of the conductive gate electrode and a second portion formed on the side walls of the fin and having an opening in the source/drain regions extending from an upper edge to a lower edge of each of the side walls; a silicide layer formed on each surface of the source/drain regions exposed in the opening of the second side wall insulating film; and source/drain electrodes contacting the silicide layers.

Abstract: A process for producing a biodegradable and bioabsorbable implant material, which comprises forging a billet comprising and biodegradable and bioabsorbable crystalline polymer at a low temperature and then forging the same once more or in a plurality of times at a low temperature by changing its press-forcing direction.

Abstract: This invention provides a biodegradable and bioabsorbable implant material having a high mechanical strength wherein its shape after deformation within ordinary temperature range can be fixed and maintained so that its shape can be easily adjusted at the site of operation, and it has substantially no anisotropy in view of strength so that it does not cause whitening, breakage and sharp decrease in strength when its bending deformation is repeated in any direction and it has toughness.

Abstract: This invention provides a biodegradable and bioabsorbable implant material having a high mechanical strength wherein its shape after deformation within ordinary temperature range can be fixed and maintained so that its shape can be easily adjusted at the site of operation, and it has substantially no anisotropy in view of strength so that it does not cause whitening, breakage and sharp decrease in strength when its bending deformation is repeated in any direction and it has toughness.

Abstract: A high bending strength and high density material for osteosynthesis, which comprises a biodegradable and bioabsorbable crystalline thermoplastic polymer material, and a high strength implant material, comprising a composite material in which a bioceramics powder of from 0.2 to 50 .mu.m in particle size is dispersed in the polymer material, wherein crystals of the polymer material are pressure-oriented not in a uni-axial direction but basically in parallel with a plurality of reference axes; and a production method by pressure orientation, which comprises preparing in advance a biodegradable and bioabsorbable crystalline thermoplastic polymer material or a dispersed mixture of the polymer material and a bioceramics powder and melt-molding it into a pre-molded material which is then press-charged at a cold temperature into a cavity of a closed type forming mold, thereby obtaining an oriented molding.

Abstract: A dry cleaning method for removing metal contaminants from a surface of an oxide film such that no substantial etching of the oxide film occurs, includes the steps of supplying a halide gas containing an element that is selected from the group IIIa elements, group IVa elements and the group Va elements in a form of halide, to the oxide film, thereby dry cleaning the surface of the oxide film.

Abstract: A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.

Abstract: A dry cleaning process for removing metal contaminants from a surface of an oxide film includes the steps of: forming a reaction area on the oxide film such that a silicon surface is formed in correspondence to the reaction area, supplying a dry cleaning gas selected from a group essentially consisting of chlorine, bromine, hydrogen chloride, hydrogen bromide and a mixture thereof, to the oxide film including the reaction area, to produce silicon halide molecules as a result of a reaction between the dry cleaning gas and the silicon surface, supplying the silicon halide molecules to a surface of the oxide film, and removing metal elements existing on the surface of the oxide film as a result of a reaction between the metal element and the dry cleaning gas under a presence of the silicon halide molecules.