Abstract: A blood pressure measurement system includes a sphygmomanometer having a nighttime blood pressure measurement mode for automatically starting blood pressure measurement according to a predetermined schedule, and an information terminal capable of communicating with the sphygmomanometer. The sphygmomanometer includes a mode operation unit that sets the sphygmomanometer to the nighttime blood pressure measurement mode. At least one of the sphygmomanometer and the information terminal includes a storage unit that stores measurement time at which blood pressure measurement was performed in the nighttime blood pressure measurement mode.

Abstract: Provided is an electrophotographic electroconductive member, including: an electroconductive support; an electroconductive layer; and a surface layer in order, wherein an impedance is 1.0×103? to 1.0×108? at an outer surface of the electroconductive member, in the surface layer, an electronic electroconductive agent is dispersed, the electroconductive layer has a matrix containing a cross-linked product of a first rubber and domains each containing a cross-linked product of a second rubber and electroconductive particles, and wherein, and wherein among the domains observed in specified observation regions, 80% by number or more of the domains satisfy (1) and (2): (1) a proportion of sectional areas of the electroconductive particles with respect to the domain is 20% or more; (2) A/B is 1.00 to 1.10 when A is a perimeter of the domain and B is an envelope perimeter.

Abstract: Provided is an electrophotographic electro-conductive member including a support having an electro-conductive outer surface, and an electro-conductive layer. The electro-conductive layer has a matrix containing a crosslinked product of a first rubber and domains containing a crosslinked product of a second rubber and an electron conductive agent. When measuring an impedance by applying alternating voltage between the outer surface of the support and a platinum electrode on an outer surface of the electro-conductive layer while changing a frequency, a slope at specific frequencies is ?0.8 to ?0.3 in a double logarithmic plot, and an impedance at specific frequency range is 1.0×104? to 1.0×1011?. When measuring an impedance by applying alternating voltage between the outer surface of the support and a platinum electrode on an outer surface of the electrophotographic electro-conductive member while changing a frequency, an impedance at specific frequency range is 1.0×105? to 1.0×1011?.

Abstract: A connector housing includes a housing main body and a latch arm having a latch arm main body and a latch portion protruding from the latch arm main body. The latch arm main body is formed of a first material, extends like a cantilever from the housing main body, and is elastically deformable with respect to the housing main body. The latch portion is formed of a second material having a higher rigidity than the first material and latches with a latched member. A transition region between the first material and the second material has a continuously changing mixing ratio between the first material and the second material.

Abstract: A optically pumped magnetometer includes a cell filled with an alkali metal; a pump light source that generates a pump light; a probe light source that generates a probe light; a signal output unit that obtains an output signal related to magnetism, which is received by the cell, based on the probe light which has passed through the cell; a coil unit that generates a static magnetic field along a pump optical axis in a region of disposition of the cell; and a computer that controls operation of the coil unit. The computer outputs a first control signal to set an intensity of the static magnetic field to a first intensity, and a second control signal to set the intensity of the static magnetic field to a second intensity different from the first intensity.

Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

Abstract: An electro-conductive layer of an electrophotographic electro-conductive member has a matrix-domain structure. The matrix contains a first rubber. The domain contains a second rubber and electro-conductive particles. Where ? represents an average of ratios of the cross-sectional area of the electro-conductive particles contained in each of the domains to the cross-sectional area of each of the domains appearing on a cross-section of the electro-conductive layer in a thickness direction, and ? represents a standard deviation of the ratios, ?/? is 0 or more and 0.4 or less, and ? is 20% or more and 40% or less. At least eight of samples with a first cubic shape 9 ?m on a side, which are sampled at arbitrary nine positions on the electro-conductive layer, satisfy the specified condition.

Abstract: A method of etching a silicon oxide film with high precision at high selectivity as compared with a silicon nitride film while establishing both of a higher etching rate of the silicon oxide film and a lower etching rate of the silicon nitride film is provided. An etching method according to the present invention is directed to a dry etching method for etching a film structure without using plasma in which an end of a film layer having a silicon oxide film vertically sandwiched between silicon nitride films and laminated and formed in advance on a wafer disposed in a processing chamber forms a side wall of a groove or a hole while a processing gas is supplied into the processing chamber, the method including the steps of: supplying a hydrogen fluoride gas; cooling the wafer to a low temperature of ?30° C. or lower, preferably, to ?30 to ?60° C.; and etching the silicon oxide film laterally from the end.

Abstract: Provided is a method of manufacturing a magnetic tunnel junction that simultaneously realizes removal of oxides on side walls of a magnetic layer and formation of a protective film and prevents deterioration of magnetic characteristics. The method includes: a first step 802 of etching a stacked film including a first magnetic layer, a MgO barrier layer, and a second magnetic layer stacked in order by plasma etching using an oxidizing gas to form the magnetic tunnel junction; and a second step 803 of simultaneously introducing an organic acid gas which is an n-valent acid and a precursor gas having a corresponding metal element valence of m, to form a first protective film on side walls of the magnetic tunnel junction. In the second step, the precursor gas is introduced at a molar ratio of n/m or more with respect to 1 mole of the organic acid gas introduced.

Abstract: The present invention provides prediction information for an effect of taking a medicine on a biometric value. A medication assistance information providing device includes a first acquisition unit configured to acquire prescription information related to a medicine that a user plans to take, a second acquisition unit configured to acquire dosing adherence rate information including a dosing adherence rate representing a medication achievement of the user with respect to a dosage specified by the prescription information, a third acquisition unit configured to acquire change prediction information for a biometric value of the user relative to the dosing adherence rate on the basis of the prescription information and the dosing adherence rate information, and a first provision unit configured to provide the change prediction information for the biometric value.

Abstract: To prompt measurement of corresponding biometric data according to a variation of environmental data. A measurement-facilitating device includes a first acquisition unit that acquires the environmental data regarding an external environment of a user, a first determination unit that determines whether the environmental data meets a preliminarily stored condition regarding an environment set based on the biometric data of the user and indicating that the biometric data of the user is susceptible to a change, and an instruction unit that instructs the measurement of the biometric data when the environmental data is determined to meet the condition.

Abstract: A semiconductor device of the embodiment includes first and second conductive layer; a silicon nitride layer between the first conductive layer and the second conductive layer; a silicon oxide layer between the silicon nitride layer and the second conductive layer; a silicon oxynitride layer between the silicon oxide layer and the second conductive layer; and a third conductive layer between the first conductive layer and the second conductive layer, the third conductive layer electrically connected to the first and second conductive layer, a first tilt angle of a plane where the third conductive layer is in contact with the silicon oxynitride layer with respect to an interface between the silicon nitride layer and the silicon oxide layer is smaller than a second tilt angle of a plane where the third conductive layer is in contact with the silicon oxide layer with respect to the interface.

Abstract: Provided is an electrophotographic member that shows a small increase in electrical resistance value even when used under a low-temperature environment. The electrophotographic member is an electrophotographic member including an electroconductive substrate and a resin layer on the electroconductive substrate, wherein the resin layer contains an anion, inorganic particles having a hydrophobicity degree of 40% or more and 80% or less, and a resin having a specific cation structure.

Abstract: A magnetic tunnel junction device includes a first ferromagnetic layer, a tunnel barrier that is in contact with the first ferromagnetic layer, and a synthetic ferrimagnetic reference layer that is in contact with the tunnel barrier while being in the other side of the first ferromagnetic layer, in which the synthetic ferrimagnetic reference layer includes a second ferromagnetic layer that has a first magnetization direction while being in contact with the tunnel barrier, a magnetic layer that has a second magnetization direction which is anti-parallel to the first magnetization direction, and a first nonmagnetic layer that is interposed between the second ferromagnetic layer and the magnetic layer, and lateral dimensions of the magnetic layer of the synthetic ferrimagnetic reference layer are made larger than lateral dimensions of the first ferromagnetic layer and the second ferromagnetic layer.

Abstract: To provide a magnetic tunnel junction (MTJ) element that is adapted to suppress the degradation of magnetic properties of a magnetic tunnel junction layer due to plasma CVD layer formation and adapted for miniaturization. The MTJ element includes a magnetic tunnel junction layer (101, 102, 103) and a plurality of passivation layers formed on a side wall of the magnetic tunnel junction layer. The plurality of passivation layers are SiN layers formed under different plasma CVD layer forming conditions and include a first passivation layer 109 formed in direct contact with the magnetic tunnel junction layer. A hydrogen ion density or hydrogen ion energy of a layer forming condition for the first passivation layer is lower than a hydrogen ion density or hydrogen ion energy of a layer forming condition for the other of the plural passivation layers. The other passivation layers include a passivation layer, a nitrogen density of which is higher than a nitrogen density of the first passivation layer.

Abstract: A optically pumped magnetometer includes a cell filled with an alkali metal; a pump light source that generates a pump light; a probe light source that generates a probe light; a signal output unit that obtains an output signal related to magnetism, which is received by the cell, based on the probe light which has passed through the cell; a coil unit that generates a static magnetic field along a pump optical axis in a region of disposition of the cell; and a computer that controls operation of the coil unit. The computer outputs a first control signal to set an intensity of the static magnetic field to a first intensity, and a second control signal to set the intensity of the static magnetic field to a second intensity different from the first intensity.

Abstract: Provided is an electrophotographic member in which the increase in tackiness is small even in an environment of high temperature and high humidity. The electrophotographic member includes an electroconductive substrate and a surface layer, the surface layer contains resin including at least one of a urethane bond and an amide bond, the resin includes a cationic structure and an anionic structure in a molecule, and also includes a particular main-chain structure with hydrophobicity.

Abstract: An electrophotographic developing member includes an electro-conductive support and an electro-conductive layer provided on the support, wherein the electro-conductive layer has a matrix containing a first rubber and a plurality of domains dispersed in the matrix, and the domain contains a second rubber and an electronic conductive agent and when a frequency is log-log-plotted on a horizontal axis and an impedance is log-log-plotted on a vertical axis with respect to an impedance measured by applying an alternating current voltage having an amplitude of 1 V on the electro-conductive layer while changing a frequency between 1.0×10?2 Hz to 1.0×107 Hz under a specific environment, an inclination of an impedance on a high frequency side is ?0.8 or more and ?0.3 or less and an impedance on a low frequency side is 1.0×104? to 1.0×1011?.

Abstract: An analysis method includes: subjecting a sample to liquid chromatography; performing first mass spectrometry of the sample subjected to the liquid chromatography to detect a first ion corresponding to cholesteryl ester and a second ion corresponding to cholesteryl ester peroxide; and analyzing a degree of oxidation of the sample based on a ratio between an intensity of the detected first ion and an intensity of the detected second ion.

Abstract: This construction machine comprises: an attitude sensor that detects the current attitude of an upper turning body; a reference angular acceleration calculation unit that calculates a reference angular acceleration to be generated when an electric turning motor is driven by a torque command value generated according to the operation amount of an operation part; a reference gravity torque calculation unit that, on the basis of the current attitude and the deviation between an actual angular acceleration which is obtained from a rotation speed and the reference angular acceleration, calculates a reference gravity torque which is a torque component to be generated about the turning axis by the gravity in the reference attitude; a gravity compensation torque calculation unit that, on the basis of the reference gravity torque and the current attitude, calculates a gravity compensation torque for compensating a torque component generated about the turning axis by the gravity in the current attitude; and a correctio